High Power MELF PIN Diodes Series
MMP7072-127-1, MMP7076-127-1,
MMP7080-127-1
Features
•
•
•
•
•
•
•
Higher Average Power Handling: >100 Watts CW
Higher Voltage Rating: >600 Volts
Lower Rs: <0.8 (Lower Insertion Loss & Higher IIP3)
Lower Thermal Resistance: <20 °C / W for Higher Power
Ceramic Surface Mount Package
RoHS Compliant
Hermetically Sealed
Case Style 127-1
Description
The MMP7072-127-1, MMP7076-127-1, MMP7080-127-1 MELF PIN Diode Family is manufactured using
Aeroflex/Metelics proprietary diode process which optimizes the anode and cathode bonding area of
the diode to the adjacent heat spreading metal posts within the ceramic package. This unique geometry
provides lower electrical and thermal resistance within the surface mount package to provide higher
average power performance to comparable surface mount diode packages.
With lower Thermal Resistance ( < 20 ºC/W ), RF C.W. incident power levels of + 50 dBm and RF peak
incident power levels of + 60 dBm are very achievable in higher power UHF cold switching applications.
The low series resistance (< 0.8
Ω),
coupled with the longer minority carrier lifetime, ( > 3 μS ), provides
better IIP3 distortion values > + 70 dBm, for SP2T Tx-Rx Switches.
These devices are hermetically sealed and are constructed with non-magnetic materials to meet
stringent requirements for MRI systems. The devices are fully RoHS compliant.
Applications
The MMP7072-127-1, MMP7076-127-1 , MMP7080-127-1 MELF PIN Diode Family is designed to be used
in Higher Power Switch and Attenuator applications, operating from 1 MHz to 1 GHz. These devices are
durable, reliable, and are capable of meeting all military, commercial, and industrial applications.
Environmental Capabilities
The MMP7072-127-1, MMP7076-127-1 , and MMP7080-127-1 MELF PIN Diodes are capable of meeting
the environmental requirements of MIL-STD-750.
ESD Rating
PIN Diodes are susceptible to ESD conditions as with all semiconductors. The ESD rating for these
devices is Class 1A, HBM.
Document 12205 Rev. A
Revision Date: 9/3/08
1
High Power MELF PIN Diodes
MMP7072-127-1, MMP7076-127-1, MMP7080-127-1
Electrical Specifications @ TA = + 25 ºC ( Unless Otherwise Defined )
Parameter
Voltage Breakdown
(See Note 1)
Forward Voltage
Reverse Leakage Current
Series Resistance
Parallel Resistance
Capacitance
Minority Carrier Lifetime
Symbol
-Vb
Vf
- Ir
Rs
Rp
Ct
TL
Units
Volts
Volts
ηA
Ω
KΩ
pF
μS
Test Conditions
| - 10 μA | @ DC
+ 100 mA @ DC
| 80 % Min Vb | @ DC
+ 100 mA @ 100 MHz
-100 V @ 100 MHz
-100 V @ 1 MHz
( 50% Control – 90 %
Output Voltage)
If =+10 mA /-Ir =- 6 mA
F = 1 KHz
IH = 1A, IL = 10 mA
3
200
Minimum
Value
| - 100 |
Typical
Value
| - 600 |
0.85
| -100 |
0.5
250
0.62
4.5
0.70
6
1.0
| -1000 |
0.8
Maximum
Value
C.W. Thermal Resistance
θ
ºC/W
15
20
Electrical Specification Notes:
1.
2.
3.
Minimum Vb values are as follows: MMP7072-127-1 >
| -100 V |
, MMP7076-127-1 >
| -200 V |
,
MMP7080-127-1 >
| -600
V
|
Series Resistance, ( Rs ) and Parallel Resistance ( Rp ) are measured on the HP 4291 Impedance Analyzer.
Total Capacitance, ( Ct ) is the summation of the Diode Junction Capacitance, ( Cj ), and the Package
Capacitance, Cpkg.
Absolute Maximum Ratings @ TA = + 25 ºC ( Unless Otherwise Defined )
Parameter
Forward Current
Reverse Voltage
Forward Voltage
Operating Temperature
Storage Temperature
Junction Temperature
Total Dissipated RF & D.C. Power
( Diode Case in Air Ambient )
Total Dissipated RF & D.C. Power
( Diode Case at Thermal Ground )
Assembly Temperature
1000 mA
| -700 | V (See Electrical Specification Note 1)
1.2 V @ 100 mA
- 65 ºC to + 125 ºC
- 65 ºC to + 150 ºC
+ 175 ºC
3W @ + 25 ºC
De-Rate Linearly at -20 mW / ºC to 0 W @ + 175 ºC
7.5 W @ + 25 ºC
De-Rate Linearly at -50 mW / ºC to 0 W @ + 175 ºC
+ 310 ºC for 10 Seconds
Absolute Maximum Value
2
TEL: 603-641-SEMI (7364) • metelics-sales@aeroflex.com • www.aeroflex.com/metelics
Revision Date: 9/1/08
High Power MELF PIN Diodes
Assembly Instructions
The MELF PIN Diodes are capable of being placed onto circuit boards with pick and place manufacturing equipment
from tape-reel dispensing. The devices are attached to the circuit using conventional solder re-flow or wave soldering
procedures with RoHS type or Sn 63 / Pb 37 type solders.
Circuit Pad Layout for MMP7072-127-1 MELF PIN Diode
0.105 in
( 2.67 mm )
0.065 in
( 1.65 mm )
0.045 in
( 1.14 mm )
Outline Drawing
Case Style 127-1 Outline
+
Electrodes
B
_
C
Symbol
Dimension A
Inches ( mm )
Cathode
Mark
Dimension B
Inches ( mm )
0.125+/- 0.010
( 3.18 +/- 0.25)
Dimension C
Inches ( mm )
0.020 Typ
( 0.51 )
0.088 +/- 0.007
( 2.24 +/- 0.18 )
Notes:
1.
A Square
Anode and Cathode Electrodes are Electroplated as
Follows: Minimum 70 u in Cu, followed by 100 u in
minimum Sn per MIL-C-14550, Type I.
3
TEL: 603-641-SEMI (7364) • metelics-sales@aeroflex.com • www.aeroflex.com/metelics
Revision Date: 9/1/08
High Power MELF PIN Diodes
RF Performance
MMP7072, MMP7076, MMP7080-127-1 Capacitance vs Reverse Voltage
0.700
Ct_100 MHz
0.680
0.660
0.640
0.620
Ct_1 GHz
Ct_1.8 GHz
Ct ( pF )
0.600
0.580
0.560
0.540
0.520
0.500
0
5
10
15
20
25
30
35
40
Reverse Voltage ( V )
MMP7072, MMP7076, MMP7080-127-1 Parallel Resistance vs ReverseVoltage
100
Rp_ 1 GHz
Rp_1.8 GHz
Rp ( K Ohms )
10
0.0
10.0
20.0
30.0
40.0
Reverse Voltage ( V )
4
TEL: 603-641-SEMI (7364) • metelics-sales@aeroflex.com • www.aeroflex.com/metelics
Revision Date: 9/1/08
High Power MELF PIN Diodes
MMP7072, MMP7076, MMP7080-127-1 Forward Series Resistance vs Current
1000.0
Rs_100 MHz
Rs_1 GHz
100.0
Rs ( Ohms )
10.0
1.0
0.1
0.0
0.1
1.0
10.0
100.0
I ( mA )
MMP7072, MMP7076, MMP7080-127-1 Forward Series Resistance @ 100 mA vs Frequency
1.00
Rs vs F_100 mA
0.80
Rs ( Ohms )
0.60
0.40
0.20
0.00
100
200
300
400
500
600
700
800
900
1000
F ( MHz )
TEL: 603-641-SEMI (7364) • metelics-sales@aeroflex.com • www.aeroflex.com/metelics
Revision Date: 9/1/08
5
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