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A3P1000-FGG484YM

产品描述Field Programmable Gate Array,
产品类别可编程逻辑器件    可编程逻辑   
文件大小11MB,共216页
制造商Microsemi
官网地址https://www.microsemi.com
标准
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A3P1000-FGG484YM概述

Field Programmable Gate Array,

A3P1000-FGG484YM规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Microsemi
Reach Compliance Codecompliant
JESD-609代码e1
湿度敏感等级3
峰值回流温度(摄氏度)250
可编程逻辑类型FIELD PROGRAMMABLE GATE ARRAY
端子面层Tin/Silver/Copper (Sn/Ag/Cu)
处于峰值回流温度下的最长时间30

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Revision 5
Military ProASIC3/EL Low Power Flash FPGAs
with Flash*Freeze Technology
Features and Benefits
Military Temperature Tested and Qualified
• Each Device Tested from –55°C to 125°C
Advanced and Pro (Professional) I/Os
††
700 Mbps DDR, LVDS-Capable I/Os
1.2 V, 1.5 V, 1.8 V, 2.5 V, and 3.3 V Mixed-Voltage Operation
Bank-Selectable I/O Voltages—up to 8 Banks per Chip
Single-Ended I/O Standards: LVTTL, LVCMOS 3.3 V /
2.5 V / 1.8 V / 1.5 V / 1.2 V, 3.3 V PCI / 3.3 V PCI-X, and
LVCMOS 2.5 V / 5.0 V Input
Differential I/O Standards: LVPECL, LVDS, BLVDS, and M-LVDS
Voltage-Referenced I/O Standards: GTL+ 2.5 V / 3.3 V, GTL
2.5 V / 3.3 V, HSTL Class I and II, SSTL2 Class I and II, SSTL3
Class I and II (A3PE3000L only)
I/O Registers on Input, Output, and Enable Paths
Hot-Swappable and Cold-Sparing I/Os
Programmable Output Slew Rate and Drive Strength
Programmable Input Delay (A3PE3000L only)
Schmitt Trigger Option on Single-Ended Inputs (A3PE3000L)
Weak Pull-Up/-Down
IEEE 1149.1 (JTAG) Boundary Scan Test
Pin-Compatible Packages across the Military ProASIC
®
3EL Family
• Architecture Supports Ultra-High Utilization
Firm-Error Immune
• Not Susceptible to Neutron-Induced Configuration Loss
Low Power
• Dramatic Reduction in Dynamic and Static Power
• 1.2 V to 1.5 V Core and I/O Voltage Support for Low Power
• Low Power Consumption in Flash*Freeze Mode Allows for
Instantaneous Entry To / Exit From Low-Power Flash*Freeze
Mode
ƒ
• Supports Single-Voltage System Operation
• Low-Impedance Switches
High Capacity
• 250K to 3M System Gates
• Up to 504 Kbits of True Dual-Port SRAM
• Up to 620 User I/Os
Reprogrammable Flash Technology
130-nm, 7-Layer Metal (6 Copper), Flash-Based CMOS Process
Live-at-Power-Up (LAPU) Level 0 Support
Single-Chip Solution
Retains Programmed Design when Powered Off
Clock Conditioning Circuit (CCC) and PLL
• Six CCC Blocks—One Block with Integrated PLL in ProASIC3
and All Blocks with Integrated PLL in ProASIC3EL
• Configurable Phase Shift, Multiply/Divide, Delay Capabilities,
and External Feedback
• Wide Input Frequency Range 1.5 MHz to 250 MHz (1.2 V
systems) and 350 MHz (1.5 V systems)
High Performance
• 350 MHz (1.5 V systems) and 250 MHz (1.2 V systems) System
Performance
• 3.3 V, 66 MHz, 64-Bit PCI (1.5 V systems) and 66 MHz, 32-Bit
PCI (1.2 V systems)
SRAMs and FIFOs
• Variable-Aspect-Ratio 4,608-Bit RAM Blocks (×1, ×2, ×4, ×9,
and ×18 organizations available)
• True Dual-Port SRAM (except ×18)
• 24 SRAM and FIFO Configurations with Synchronous
Operation:
– 250 MHz: For 1.2 V Systems
– 350 MHz: For 1.5 V Systems
• ARM Cortex™-M1 Soft Processor Available with or without
Debug
In-System Programming (ISP) and Security
• Secure ISP Using On-Chip 128-Bit Advanced Encryption
Standard (AES) Decryption via JTAG (IEEE 1532–compliant)
• FlashLock
®
to Secure FPGA Contents
High-Performance Routing Hierarchy
• Segmented, Hierarchical Routing and Clock Structure
• High-Performance, Low-Skew Global Network
Table 1 •
Military ProASIC3/EL Low-Power Devices
A3P250
ARM
®
Processor Support in ProASIC3/EL FPGAs
ProASIC3/EL Devices
Devices
1
A3PE600L
A3P1000
M1A3P1000
1M
24,576
144
32
1
Yes
1
18
4
154
PQ208
FG144, FG256, FG484
A3PE3000L
M1A3PE3000L
3M
75,264
504
112
1
Yes
6
18
8
620
ARM Cortex-M1
System Gates
250,000
600,000
VersaTiles (D-flip-flops)
6,144
13,824
RAM kbits (1,024 bits)
36
108
4,608-Bit Blocks
8
24
FlashROM Kbits
1
1
2
Secure (AES) ISP
Yes
Yes
Integrated PLL in CCCs
1
6
VersaNet Globals
18
18
I/O Banks
4
8
Maximum User I/Os
68
270
Package Pins
VQFP
VQ100
PQFP
FBGA
FG484
Notes:
1. Refer to the
Cortex-M1
product brief for more information.
2. AES is not available for ARM-enabled ProASIC3/EL devices.
† A3P250 and A3P1000 support only 1.5 V core operation.
ƒ Flash*Freeze technology is not available for A3P250 or A3P1000.
††Pro I/Os are not available on A3P250 or A3P1000.
September 2014
© 2014 Microsemi Corporation
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