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NE38018-T1

产品描述RF Small Signal Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Hetero-junction FET, PLASTIC, SUPERMINI-4
产品类别分立半导体    晶体管   
文件大小75KB,共11页
制造商NEC(日电)
下载文档 详细参数 选型对比 全文预览

NE38018-T1概述

RF Small Signal Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Hetero-junction FET, PLASTIC, SUPERMINI-4

NE38018-T1规格参数

参数名称属性值
是否Rohs认证不符合
厂商名称NEC(日电)
包装说明PLASTIC, SUPERMINI-4
Reach Compliance Codecompliant
其他特性LOW NOISE
外壳连接SOURCE
配置SINGLE
最小漏源击穿电压3 V
最大漏极电流 (ID)0.03 A
FET 技术HETERO-JUNCTION
最高频带S BAND
JESD-30 代码R-PDSO-G4
JESD-609代码e0
元件数量1
端子数量4
工作模式DEPLETION MODE
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)NOT SPECIFIED
极性/信道类型N-CHANNEL
最小功率增益 (Gp)12.5 dB
认证状态Not Qualified
表面贴装YES
端子面层TIN LEAD
端子形式GULL WING
端子位置DUAL
处于峰值回流温度下的最长时间NOT SPECIFIED
晶体管应用AMPLIFIER
晶体管元件材料GALLIUM ARSENIDE

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DATA SHEET
Hetero Junction Field Effect transistor
NE38018
L to S BAND LOW NOISE AMPLIFER
N-CHANNEL HJ-FET
FEATURES
• Super Low noise figure & High Associated Gain
NF = 0.55 dB TYP., Ga = 14.5 dB TYP., OIP
3
= 22 dBm (V67), OIP
3
= 23 dBm (V68) TYP. @ f = 2 GHz
NF = 0.4 dB TYP., Ga = 20 dB TYP. @ f = 900 MHz
• 4 pins super mini mold package
• Wg = 800
µ
m
ORDERING INFORMATION
Part Number
NE38018-T1
Package
4 pins super mini mold package
Supplying Form
Embossed tape 8 mm wide
Pin3 (Source), Pin4 (Drain) face to perforation side of the tape
Qty 3 kpcs/reel
Remark
To order evaluation samples, contact your nearby sales office.
Part number for sample order: NE38018
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PG10216EJ01V0DS (1st edition)
(Previous No. P13494EJ1V0DS00)
Date Published January 2003 CP(K)
Printed in Japan
NEC Compound Semiconductor Devices 1998, 2003

NE38018-T1相似产品对比

NE38018-T1 NE38018-T1-68-A NE38018-T1-A NE38018-T1-67-A
描述 RF Small Signal Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Hetero-junction FET, PLASTIC, SUPERMINI-4 RF Small Signal Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Hetero-junction FET, PLASTIC, SUPERMINI-4 RF Small Signal Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Hetero-junction FET, PLASTIC, SUPERMINI-4 RF Small Signal Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Hetero-junction FET, PLASTIC, SUPERMINI-4
是否Rohs认证 不符合 符合 符合 符合
厂商名称 NEC(日电) NEC(日电) NEC(日电) NEC(日电)
包装说明 PLASTIC, SUPERMINI-4 PLASTIC, SUPERMINI-4 PLASTIC, SUPERMINI-4 PLASTIC, SUPERMINI-4
Reach Compliance Code compliant compliant compliant compliant
外壳连接 SOURCE SOURCE SOURCE SOURCE
配置 SINGLE SINGLE SINGLE SINGLE
最小漏源击穿电压 3 V 3 V 3 V 3 V
最大漏极电流 (ID) 0.03 A 0.03 A 0.03 A 0.03 A
FET 技术 HETERO-JUNCTION HETERO-JUNCTION HETERO-JUNCTION HETERO-JUNCTION
最高频带 S BAND S BAND S BAND S BAND
JESD-30 代码 R-PDSO-G4 R-PDSO-G4 R-PDSO-G4 R-PDSO-G4
JESD-609代码 e0 e6 e6 e6
元件数量 1 1 1 1
端子数量 4 4 4 4
工作模式 DEPLETION MODE DEPLETION MODE DEPLETION MODE DEPLETION MODE
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
峰值回流温度(摄氏度) NOT SPECIFIED 260 260 260
极性/信道类型 N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
最小功率增益 (Gp) 12.5 dB 12.5 dB 12.5 dB 12.5 dB
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified
表面贴装 YES YES YES YES
端子面层 TIN LEAD TIN BISMUTH TIN BISMUTH TIN BISMUTH
端子形式 GULL WING GULL WING GULL WING GULL WING
端子位置 DUAL DUAL DUAL DUAL
处于峰值回流温度下的最长时间 NOT SPECIFIED 10 10 10
晶体管应用 AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
晶体管元件材料 GALLIUM ARSENIDE GALLIUM ARSENIDE GALLIUM ARSENIDE GALLIUM ARSENIDE
湿度敏感等级 - 1 1 1

 
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