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DATA SHEET
Hetero Junction Field Effect transistor
NE38018
L to S BAND LOW NOISE AMPLIFER
N-CHANNEL HJ-FET
FEATURES
• Super Low noise figure & High Associated Gain
NF = 0.55 dB TYP., Ga = 14.5 dB TYP., OIP
3
= 22 dBm (V67), OIP
3
= 23 dBm (V68) TYP. @ f = 2 GHz
NF = 0.4 dB TYP., Ga = 20 dB TYP. @ f = 900 MHz
• 4 pins super mini mold package
• Wg = 800
µ
m
ORDERING INFORMATION
Part Number
NE38018-T1
Package
4 pins super mini mold package
Supplying Form
•
Embossed tape 8 mm wide
•
Pin3 (Source), Pin4 (Drain) face to perforation side of the tape
•
Qty 3 kpcs/reel
Remark
To order evaluation samples, contact your nearby sales office.
Part number for sample order: NE38018
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PG10216EJ01V0DS (1st edition)
(Previous No. P13494EJ1V0DS00)
Date Published January 2003 CP(K)
Printed in Japan
NEC Compound Semiconductor Devices 1998, 2003
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