RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET
参数名称 | 属性值 |
厂商名称 | California Eastern Labs |
Reach Compliance Code | compliant |
ECCN代码 | EAR99 |
外壳连接 | SOURCE |
配置 | SINGLE |
最小漏源击穿电压 | 15 V |
最大漏极电流 (ID) | 7 A |
FET 技术 | METAL SEMICONDUCTOR |
最高频带 | C BAND |
JESD-30 代码 | R-CDFM-F2 |
元件数量 | 1 |
端子数量 | 2 |
工作模式 | DEPLETION MODE |
最高工作温度 | 175 °C |
封装主体材料 | CERAMIC, METAL-SEALED COFIRED |
封装形状 | RECTANGULAR |
封装形式 | FLANGE MOUNT |
极性/信道类型 | N-CHANNEL |
功耗环境最大值 | 50 W |
最小功率增益 (Gp) | 9.5 dB |
认证状态 | Not Qualified |
表面贴装 | YES |
端子形式 | FLAT |
端子位置 | DUAL |
晶体管应用 | AMPLIFIER |
晶体管元件材料 | GALLIUM ARSENIDE |
NEZ4450-8DD | NEZ4450-15D | NEZ4450-4DD | NEZ4450-8D | NEZ4450-15DD | NEZ4450-4D | |
---|---|---|---|---|---|---|
描述 | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET | C BAND, GaAs, N-CHANNEL, RF POWER, MESFET | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET | C BAND, GaAs, N-CHANNEL, RF POWER, MESFET | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET | C BAND, GaAs, N-CHANNEL, RF POWER, MESFET |
Reach Compliance Code | compliant | unknown | compliant | unknown | compliant | unknown |
外壳连接 | SOURCE | SOURCE | SOURCE | SOURCE | SOURCE | SOURCE |
配置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
最小漏源击穿电压 | 15 V | 15 V | 15 V | 15 V | 15 V | 15 V |
最大漏极电流 (ID) | 7 A | 14 A | 3.5 A | 7 A | 14 A | 3.5 A |
FET 技术 | METAL SEMICONDUCTOR | METAL SEMICONDUCTOR | METAL SEMICONDUCTOR | METAL SEMICONDUCTOR | METAL SEMICONDUCTOR | METAL SEMICONDUCTOR |
最高频带 | C BAND | C BAND | C BAND | C BAND | C BAND | C BAND |
JESD-30 代码 | R-CDFM-F2 | R-CDFM-F2 | R-CDFM-F2 | R-CDFM-F2 | R-CDFM-F2 | R-CDFM-F2 |
元件数量 | 1 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 2 | 2 | 2 | 2 | 2 | 2 |
工作模式 | DEPLETION MODE | DEPLETION MODE | DEPLETION MODE | DEPLETION MODE | DEPLETION MODE | DEPLETION MODE |
最高工作温度 | 175 °C | 175 °C | 175 °C | 175 °C | 175 °C | 175 °C |
封装主体材料 | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
功耗环境最大值 | 50 W | 100 W | 25 W | 50 W | 100 W | 25 W |
最小功率增益 (Gp) | 9.5 dB | 9 dB | 9.5 dB | 9.5 dB | 9 dB | 9.5 dB |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
表面贴装 | YES | YES | YES | YES | YES | YES |
端子形式 | FLAT | FLAT | FLAT | FLAT | FLAT | FLAT |
端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
晶体管应用 | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER |
晶体管元件材料 | GALLIUM ARSENIDE | GALLIUM ARSENIDE | GALLIUM ARSENIDE | GALLIUM ARSENIDE | GALLIUM ARSENIDE | GALLIUM ARSENIDE |
厂商名称 | California Eastern Labs | - | California Eastern Labs | California Eastern Labs | California Eastern Labs | California Eastern Labs |
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