电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

NE76184A-T1A

产品描述RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, CERAMIC PACKAGE-4
产品类别分立半导体    晶体管   
文件大小68KB,共10页
制造商NEC(日电)
下载文档 详细参数 选型对比 全文预览

NE76184A-T1A概述

RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, CERAMIC PACKAGE-4

NE76184A-T1A规格参数

参数名称属性值
厂商名称NEC(日电)
包装说明DISK BUTTON, O-CRDB-F4
针数4
Reach Compliance Codeunknown
ECCN代码EAR99
其他特性LOW NOISE
配置SINGLE
最小漏源击穿电压5 V
最大漏极电流 (ID)0.1 A
FET 技术METAL SEMICONDUCTOR
最高频带X BAND
JESD-30 代码O-CRDB-F4
元件数量1
端子数量4
工作模式DEPLETION MODE
封装主体材料CERAMIC, METAL-SEALED COFIRED
封装形状ROUND
封装形式DISK BUTTON
极性/信道类型N-CHANNEL
认证状态Not Qualified
表面贴装YES
端子形式FLAT
端子位置RADIAL
晶体管元件材料GALLIUM ARSENIDE

文档预览

下载PDF文档
DATA SHEET
GaAs MES FET
NE76184A
GENERAL PURPOSE FET N-CHANNEL GaAs MES FET
DESCRIPTION
NE76184A is a N-channel GaAs MES FET housed in ce-
ramic package. The device is fabricated by ion implantation for
improved RF and DC performance reliability and uniformity. Its
excellent low noise and high associated gain make it suitable
for DBS, TVRO, GPS and another commercial systems.
PACKAGE DIMENSIONS
(Unit: mm)
1.78 ±0.2
1
L
L
1.78 ±0.2
0.5 TYP.
4
FEATURES
• Low noise figure & High associated gain
NF = 0.8 dB TYP., G
a
= 12 dB TYP. at f = 4 GHz
ORDERING INFORMATION
PART NUMBER
NE76184A-SL
NE76184A-T1
NE76184A-T1A
SUPPLYING
FORM
STICK
Tape & reel
LEAD LENGTH
L = 1.7 mm MIN.
L = 1.0
±
0.2 mm
2
L
3
J
L
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 ˚C)
Drain to Source Voltage
Gate to Source Voltage
Gate to Drain Voltage
Drain Current
Total Power Dissipation
Channel Temperature
Storage Temperature
V
DS
V
GSO
V
GDO
I
D
P
tot
T
ch
T
stg
5.0
V
–5.0
V
–6.0
V
100
mA
300
mW
150
˚C
–65 to +150 ˚C
1. Source
2. Drain
3. Source
4. Gate
ELECTRICAL CHARACTERISTICS (T
A
= 25 ˚C)
PARAMETER
Gate to Source Leak Current
Saturated Drain Current
Gate to Source Cutoff Voltage
Transconductance
Noise Figure
Associated Gain
Power Gain
SYMBOL
I
GSO
I
DSS
V
GS (off)
g
m
NF
G
a
G
s
MIN.
30
–0.5
20
TYP.
45
0.8
12
6
MAX.
10
100
–3.0
1.4
UNIT
TEST CONDITIONS
V
GS
= –5 V
V
DS
= 3 V, V
GS
= 0
V
DS
= 3 V, I
D
= 100
µ
A
V
DS
= 3 V, I
D
= 10 mA
V
DD
= 3 V
I
D
= 10 mA
f = 12 GHz
f = 4 GHz
µ
A
mA
V
mS
dB
dB
dB
I
DSS
rank is specified as follows. (K: 30 to 100 mA, N: 30 to 65 mA, M: 55 to 100 mA)
Document No. P10852EJ2V0DS00 (2nd edition)
(Previous No. TC-2303)
Data Published October 1995 P
Printed in Japan
©
0.1
1.7 MAX.
0.5 TYP.
1991

NE76184A-T1A相似产品对比

NE76184A-T1A NE76184A-T1 NE76184A-SL
描述 RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, CERAMIC PACKAGE-4 RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, CERAMIC PACKAGE-4 RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, CERAMIC PACKAGE-4
厂商名称 NEC(日电) NEC(日电) NEC(日电)
包装说明 DISK BUTTON, O-CRDB-F4 DISK BUTTON, O-CRDB-F4 DISK BUTTON, O-CRDB-F4
针数 4 4 4
Reach Compliance Code unknown unknown unknown
ECCN代码 EAR99 EAR99 EAR99
其他特性 LOW NOISE LOW NOISE LOW NOISE
配置 SINGLE SINGLE SINGLE
最小漏源击穿电压 5 V 5 V 5 V
最大漏极电流 (ID) 0.1 A 0.1 A 0.1 A
FET 技术 METAL SEMICONDUCTOR METAL SEMICONDUCTOR METAL SEMICONDUCTOR
最高频带 X BAND X BAND X BAND
JESD-30 代码 O-CRDB-F4 O-CRDB-F4 O-CRDB-F4
元件数量 1 1 1
端子数量 4 4 4
工作模式 DEPLETION MODE DEPLETION MODE DEPLETION MODE
封装主体材料 CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
封装形状 ROUND ROUND ROUND
封装形式 DISK BUTTON DISK BUTTON DISK BUTTON
极性/信道类型 N-CHANNEL N-CHANNEL N-CHANNEL
认证状态 Not Qualified Not Qualified Not Qualified
表面贴装 YES YES YES
端子形式 FLAT FLAT FLAT
端子位置 RADIAL RADIAL RADIAL
晶体管元件材料 GALLIUM ARSENIDE GALLIUM ARSENIDE GALLIUM ARSENIDE

技术资料推荐更多

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 788  1351  445  2885  817  2  50  41  29  36 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved