RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Hetero-junction FET, 79A, 4 PIN
参数名称 | 属性值 |
是否Rohs认证 | 符合 |
厂商名称 | NEC(日电) |
包装说明 | MICROWAVE, R-CQMW-F4 |
针数 | 4 |
Reach Compliance Code | compliant |
ECCN代码 | EAR99 |
外壳连接 | SOURCE |
配置 | SINGLE |
最小漏源击穿电压 | 6 V |
最大漏极电流 (ID) | 4.2 A |
FET 技术 | HETERO-JUNCTION |
最高频带 | L BAND |
JESD-30 代码 | R-CQMW-F4 |
JESD-609代码 | e6 |
元件数量 | 1 |
端子数量 | 4 |
工作模式 | DEPLETION MODE |
封装主体材料 | CERAMIC, METAL-SEALED COFIRED |
封装形状 | RECTANGULAR |
封装形式 | MICROWAVE |
峰值回流温度(摄氏度) | NOT SPECIFIED |
极性/信道类型 | N-CHANNEL |
认证状态 | Not Qualified |
表面贴装 | YES |
端子面层 | TIN BISMUTH |
端子形式 | FLAT |
端子位置 | QUAD |
处于峰值回流温度下的最长时间 | NOT SPECIFIED |
晶体管应用 | AMPLIFIER |
晶体管元件材料 | GALLIUM ARSENIDE |
NE6510379A-T1-A | NE6510379A-A | NE6510379A-T1 | NE6510379A | |
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描述 | RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Hetero-junction FET, 79A, 4 PIN | RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Hetero-junction FET, 79A, 4 PIN | RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Hetero-junction FET, 79A, 4 PIN | RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Hetero-junction FET, 79A, 4 PIN |
是否Rohs认证 | 符合 | 符合 | 不符合 | 不符合 |
厂商名称 | NEC(日电) | NEC(日电) | NEC(日电) | NEC(日电) |
包装说明 | MICROWAVE, R-CQMW-F4 | 79A, 4 PIN | 79A, 4 PIN | 79A, 4 PIN |
Reach Compliance Code | compliant | compliant | compliant | compliant |
外壳连接 | SOURCE | SOURCE | SOURCE | SOURCE |
配置 | SINGLE | SINGLE | SINGLE | SINGLE |
最小漏源击穿电压 | 6 V | 6 V | 6 V | 6 V |
最大漏极电流 (ID) | 4.2 A | 4.2 A | 4.2 A | 4.2 A |
FET 技术 | HETERO-JUNCTION | HETERO-JUNCTION | HETERO-JUNCTION | HETERO-JUNCTION |
最高频带 | L BAND | L BAND | L BAND | L BAND |
JESD-30 代码 | R-CQMW-F4 | R-CQMW-F4 | R-CQMW-F4 | R-CQMW-F4 |
元件数量 | 1 | 1 | 1 | 1 |
端子数量 | 4 | 4 | 4 | 4 |
工作模式 | DEPLETION MODE | DEPLETION MODE | DEPLETION MODE | DEPLETION MODE |
封装主体材料 | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | MICROWAVE | MICROWAVE | MICROWAVE | MICROWAVE |
峰值回流温度(摄氏度) | NOT SPECIFIED | 260 | NOT SPECIFIED | NOT SPECIFIED |
极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
表面贴装 | YES | YES | YES | YES |
端子形式 | FLAT | FLAT | FLAT | FLAT |
端子位置 | QUAD | QUAD | QUAD | QUAD |
处于峰值回流温度下的最长时间 | NOT SPECIFIED | 10 | NOT SPECIFIED | NOT SPECIFIED |
晶体管应用 | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER |
晶体管元件材料 | GALLIUM ARSENIDE | GALLIUM ARSENIDE | GALLIUM ARSENIDE | GALLIUM ARSENIDE |
JESD-609代码 | e6 | - | e0 | e0 |
端子面层 | TIN BISMUTH | - | TIN LEAD | TIN LEAD |
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