PRELIMINARY DATA SHEET
GaAs MES FET
NE85001 SERIES
1 W C-BAND POWER GaAs FET
N-CHANNEL GaAs MES FET
DESCRIPTION
The NE8500199 Power GaAs FET covers 2 GHz to 10 GHz frequency range for commercial amplifier, oscillator
applications and so on.
NE8500100 is the two-cells recessed gate chip used in ‘99’ package.
The device incorporates Ti-Al gate and silicon dioxide glassivation. To reduce the thermal resistance, the device
has a PHS. (Plated Heat Sink)
NEC’s strigent quality assurance and test procedures assure the highest reliability and performance.
FEATURES
• Class A operation
• High power output
• High reliability
PHYSICAL DIMENSIONS
NE8500100 (CHIP) (unit:
µ
m)
65
170
146
SELECTION CHART
100
PERFORMANCE SPECIFIED
PART NUMBER
FORM
Pout (**)
(dBm)
G
L
(**)
(dB)
USABLE
FREQUENCY
(GHz)
NE8500100(*)
NE8500100-WB
NE8500100-RG
NE8500199
package
28.5 min
9.0 typ
2.0 to 10
4.0 MIN BOTH LEADS
SOURCE
chip
28.5 min
9.0 typ
2.0 to 10
100
100
780
640
PACKAGE CODE-99 (unit: mm)
1.0 ±0.1
GATE
φ
2.2 ±0.3
2 PLACES
*
WB, RG indicate a type of containers for chips.
WB: black carrier, RG: ring,: gel-pack,
**
Specified at the condition at the last page.
4.3 ±0.2
4.0
DRAIN
0.6 ±0.1
5.2 ±0.3
11.0 ±0.3
15.0 ±0.3
0.1
0.2 MAX.
1.7 ±0.15
6.0 ±0.2
5.0 MAX.
1.2
Document No. P10968EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
©
1996
NE85001 SERIES
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 ˚C)
Drain to Source Voltage
Gate to Drain Voltage
Gate to Source Voltage
Total Power Disipation(*)
Drain Current
Gate Current
Channel Temperature
Storage Temperature
V
DSX
V
GDX
V
GSX
P
T
I
D
I
G
T
ch
T
stg
15
–18
–12
6.0
1.12
6.0
175
–65 to 175
V
V
V
W
A
mA
˚
C
˚
C
*T
C
= 25 ˚C
RECOMMENDING OPERATION RANDGE
CHARACTERISTIC
Drain to Source Voltage
Channel Temperature
Input Power
Gate Resistance
SYMBOL
V
DS
T
ch
Gcomp
Rg
MIN.
9
–
–
–
TYP.
–
–
–
–
MAX.
10
130
3
1
UNIT
V
˚C
dBcomp
kΩ
ELECTRICAL CHARACTERISTICS (T
A
= 25 ˚C)
CHARACTERISTIC
Saturated Drain Current
Pinch-off Voltage
Transconductance
Thermal Resistance
SYMBOL
Idss
V
P
gm
R
th
MIN.
430
–3.0
–
–
TYP.
–
–
300
–
MAX.
860
–1.0
–
30
UNIT
mA
V
mS
˚C/W
TEST CONDITIONS
Vds = 2.5 V, Vgs = 0 V
Vds = 2.5 V, Ids = 4 mA
Vds = 2.5 V, Ids = Idss
PERFORMANCE SPECIFICATIONS (T
A
= 25 ˚C)
NE8500100
PART NUMBER
NE8500100-WG
NE8500100-RG
CHIP
MIN.
28.5
TYP.
–
MAX.
–
MIN.
28.5
NE8500199
UNIT
99
TYP.
–
MAX.
–
dBm
f = 7.2 GHz
Vds = 10 V
Ids = 200 mA set
Rg = 1 kΩ
Pin = 21.0 dBm(*)
TEST CONDITIONS
PACKAGE CODE
CHARACTERISTIC
Output Power
SYMBOL
P
O
Gate to source
Current
Igs
–2.0
–
2.0
–2.0
–
2.0
mA
Linear Gain
G
L
–
9
–
–
9
–
dB
Pin
≤
11 dBm (**)
*
Pin for Pout specification.
**
The same conditions as the above except this.
2
NE85001 SERIES
TYPICAL CHARACTERISTICS (T
A
= 25 ˚C)
NE8500199
OUTPUT POWER vs. INPUT POWER
30
P
out
- Output Power - dBm
V
DS
= 10 V
I
ds
= 200 mA set
f = 7.2 GHz
25
300
250
200
20
I
D
(mA)
15
10
15
20
P
in
- Input Power - dBm
3
NE85001 SERIES
S-PARAMETER
V
DS
= 10 V, I
DS
= 200 mA, V
GS
= –1.260 V, I
G
= 0.0 mA, R
G
= 1 kΩ
FREQUENCY
S
11
GHz
MAG
0.100
0.500
1.000
1.500
2.000
2.500
3.000
3.500
3.600
3.700
3.800
3.900
4.000
4.200
4.400
4.500
4.600
4.800
5.000
5.200
5.400
5.500
5.600
5.800
6.000
6.200
6.400
6.500
6.600
6.800
7.000
7.200
7.400
7.500
7.600
7.800
8.000
8.200
8.400
8.500
8.600
8.800
9.000
9.200
9.400
9.500
9.600
9.800
10.000
0.990
0.916
0.869
0.851
0.840
0.831
0.826
0.824
0.825
0.825
0.827
0.829
0.829
0.821
0.808
0.803
0.799
0.790
0.784
0.777
0.771
0.767
0.764
0.758
0.751
0.742
0.731
0.726
0.721
0.707
0.689
0.676
0.657
0.649
0.640
0.621
0.604
0.590
0.584
0.577
0.574
0.570
0.571
0.583
0.599
0.611
0.619
0.631
0.631
S
21
ANG
–22.7
–91.1
–132.1
–152.9
–166.1
–175.9
176.0
168.8
167.5
166.0
164.4
162.8
161.0
157.2
153.9
152.5
151.0
147.9
144.7
141.4
137.7
135.9
133.9
130.1
125.8
121.3
116.6
114.1
111.6
106.1
100.2
93.9
87.1
83.4
79.9
71.8
63.2
53.4
42.7
37.0
31.2
18.8
5.9
–7.6
–21.4
–28.5
–35.9
–50.4
–62.9
MAG
14.418
10.211
6.444
4.610
3.591
2.975
2.601
2.341
2.291
2.253
2.230
2.187
2.127
2.053
1.976
1.963
1.970
1.944
1.929
1.923
1.897
1.916
1.916
1.887
1.928
1.896
1.951
1.951
1.936
1.973
1.957
2.004
2.002
2.013
2.045
2.042
2.067
2.078
2.088
2.102
2.083
2.088
2.072
2.044
2.040
2.030
2.008
1.943
1.812
ANG
165.5
123.3
94.8
76.6
61.9
49.1
37.3
26.0
23.4
20.7
18.1
16.1
13.4
8.6
5.6
3.4
0.8
–3.1
–8.6
–12.8
–18.5
–20.7
–22.7
–28.5
–33.5
–39.1
–44.8
–47.2
–50.6
–56.8
–62.4
–69.1
–74.9
–78.8
–82.4
–88.6
–96.6
–103.5
–112.0
–115.5
–119.1
–127.8
–135.7
–144.6
–153.1
–157.9
–162.9
–173.2
177.3
MAG
0.007
0.024
0.031
0.034
0.038
0.042
0.047
0.053
0.055
0.056
0.059
0.063
0.066
0.072
0.074
0.075
0.077
0.080
0.084
0.089
0.093
0.097
0.100
0.105
0.113
0.116
0.126
0.130
0.133
0.143
0.149
0.163
0.171
0.177
0.185
0.195
0.206
0.216
0.227
0.232
0.237
0.246
0.253
0.264
0.274
0.277
0.281
0.284
0.280
S
12
ANG
70.1
47.7
33.6
29.0
28.1
26.7
25.4
27.4
27.0
26.5
26.8
26.5
25.4
20.1
16.8
15.2
13.9
12.6
9.3
7.4
4.5
3.1
1.8
–1.9
–4.8
–8.0
–11.6
–13.2
–15.9
–20.4
–23.9
–28.9
–33.3
–36.8
–39.6
–45.0
–51.8
–57.8
–65.4
–68.0
–71.2
–78.3
–84.7
–92.3
–99.3
–103.2
–107.4
–115.9
–123.6
MAG
0.065
0.175
0.221
0.241
0.260
0.278
0.296
0.313
0.317
0.323
0.333
0.340
0.345
0.353
0.343
0.337
0.340
0.341
0.340
0.349
0.347
0.358
0.363
0.358
0.381
0.369
0.397
0.396
0.387
0.411
0.402
0.424
0.425
0.431
0.448
0.452
0.465
0.478
0.492
0.500
0.501
0.519
0.534
0.545
0.568
0.577
0.583
0.600
0.587
S
22
ANG
–64.6
–126.4
–149.1
–159.2
–165.6
–170.8
–174.6
–177.8
–179.2
179.8
179.4
178.7
176.3
171.0
167.3
166.2
164.8
163.2
159.8
158.6
155.6
154.2
154.5
151.6
149.5
146.8
144.2
144.2
141.8
138.6
137.1
133.8
132.3
129.4
127.2
123.8
117.2
112.7
104.8
102.7
100.1
93.0
87.2
80.1
73.6
69.7
65.8
56.3
47.0
4
NE85001 SERIES
CHIP HANDLING
DIE ATTACHMENT
Die attach can be accomplished with a Au-Sn (300
±10
˚C) performs in a forming gas environment. Epoxy die
attach is not recommended.
BONDING
Gate and drain bonding wires should be minimum length, semi-hard gold wire (3 - 8 % elongation) 30 microns or
less in diameter.
Bonding should be performed with a wedge tip that has a taper of approximately 15 %.
Die attach and bonding time should be kept to a minimum. As a general rule, the bonding operation should be
kept within a 280 ˚C _ 5 minute curve. If longer periods are required, the temperature should be lowered.
PRECAUTIONS
The user must operate in a clean, dry environment.
The chip channel is glassivated for mechanical protection only and does not preclude the necessity of a clean
environment.
The bonding equipment should be periodically checked for sources of surge voltage and should be properly
grounded at all times. In fact, all test and handling equipment should be grounded to minimize the possibilities of static
discharge.
5
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