PRELIMINARY DATA SHEET
LDMOS FIELD EFFECT TRANSISTOR
NEM090603M-28
N-CHANNEL SILICON POWER LDMOS FET
FOR 75 W UHF-BAND SINGLE-END POWER AMPLIFIER
DESCRIPTION
The NEM090603M-28 is an N-channel enhancement-mode lateral diffused MOS FET designed for driver or final
stage in 0.8 to 1.0 GHz PA, such as, analog/digital TV-transmitter and GSM/EDGE/D-AMPS/PDC cellular base station
amplifiers. Dies are manufactured using our NEWMOS technology (our WSi gate lateral MOS FET), and its nitride
surface passivation and triple layer aluminum silicon metallization offer a high degree of reliability.
FEATURES
• High 1 dB compression output power : P
O (1 dB)
= 75 W TYP. (V
DS
= 28 V, I
Dset
= 550 mA, f = 960 MHz)
• High linear gain
• High drain efficiency
• Low intermodulation distortion
: G
L
= 17.5 dB TYP. (V
DS
= 28 V, I
Dset
= 550 mA, f = 960 MHz)
:
η
d
= 54% TYP. (V
DS
= 28 V, I
Dset
= 550 mA, f = 960 MHz)
: IM
3
=
−31
dBc TYP. (V
DS
= 28 V, I
Dset
= 550 mA, f = 960/960.1 MHz,
P
out
= 45 dBm (2 tones) )
• Internal matched (Input and Output) for case at use
• Excellent thermal stability
• Low cost hollow plastic packages
• Integrated ESD protection
• Excellent stability against HCI (Hot Carrier Injection)
APPLICATIONS
• Digital cellular base station PA : GSM/EDGE/D-AMPS/PDC/N-CDMA etc.
• UHF-band TV-transmitter PA
ORDERING INFORMATION
Part Number
NEM090603M-28
Order Number
NEM090603M-28-A
Package
3M (T-91M) (Pb-Free)
Supplying Form
ESD protective tray
Remark
To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 1 pcs.
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10467EJ01V0DS (1st edition)
Date Published October 2004 CP(K)
Printed in Japan
NEC Compound Semiconductor Devices, Ltd. 2004
NEM090603M-28
ABSOLUTE MAXIMUM RATINGS (T
A
= +25°C, unless otherwise specified)
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Total Device Dissipation
Input Power
Channel Temperature
Storage Temperature
Symbol
V
DS
V
GS
I
D
P
D
P
in
Note 1
Ratings
65
±7
6
146
3.0
200
−65
to +150
Unit
V
V
A
W
W
°C
°C
Note 2
T
ch
T
stg
Notes 1.
T
C
= 25
°C
2.
f = 960 MHz, V
DS
= 28 V
RECOMMENDED OPERATING RANGE
Parameter
Drain to Source Voltage
Gate to Source Voltage
Input Power
Symbol
V
DS
V
GS
P
in
MIN.
−
2.6
−
TYP.
28
3.0
28
MAX.
30
3.6
32
Unit
V
V
dBm
ELECTRICAL CHARACTERISTICS (T
A
= +25°C)
Parameter
Gate to Source Leak Current
Saturated Drain Current
Gate Threshold Voltage
Transconductance
Drain to Source Breakdown Voltage
Thermal Resistance
Gain 1 dB Compression Output Power
Linear Gain
Output Power
Drain Efficiency
Power Added Efficiency
3rd Order Intermodulation Distortion
Symbol
I
GSS
I
DSS
V
th
g
m
BV
DSS
R
th(ch-c)
P
O (1 dB)
G
L
Note 1
Test Conditions
V
GSS
= 5V
V
DSS
= 65 V
V
DS
= 10 V, I
D
= 1 mA
V
DS
= 28 V, I
Dset
= 550 mA
I
DSS
= 10
µ
A
Channel to Case
f = 960 MHz, V
DS
= 28 V,
I
Dset
= 550 mA
MIN.
−
−
1.7
−
65
−
−
16
47.5
48
−
TYP.
−
−
2.2
2.7
75
1.0
48.8
17.5
48.3
54
53
−31
MAX.
1
1
2.8
−
−
1.2
−
−
−
−
−
−
Unit
µ
A
mA
V
S
V
°C/W
dBm
dB
dBm
%
%
dBc
P
out
Note 2
η
d
η
add
IM
3
f = 960/960.1 MHz, V
DS
= 28 V,
I
Dset
= 550 mA, 2 tones P
out
= 45 dBm
−
Notes 1.
P
in
= 21 dBm
2.
P
in
= 32 dBm
2
Preliminary Data Sheet PU10467EJ01V0DS
NEM090603M-28
TYPICAL CHARACTERISTICS (T
A
= +25°C, V
DS
= 28 V, I
Dset
= 550 mA, unless otherwise specified)
3rd/5th Order Intermodulation Distortion IM
3
/IM
5
(dBc)
55
50
: f = 885 MHz
: f = 960 MHz
80
P
out
70
60
50
40
30
20
G
L
10
I
D
Drain Efficiency
η
d
(%), Linear Gain G
L
(dB),
Drain Current I
D
(A)
OUTPUT POWER, DRAIN EFFICIENCY,
LINEAR GAIN, DRAIN CURRENT
vs. INPUT POWER
IM
3
/IM
5
, DRAIN EFFICIENCY
vs. 2 TONES OUTPUT POWER
–10
–20
–30
–40
–50
–60
–70
30
IM
3
Output Power P
out
(dBm)
45
40
35
30
25
20
15
10
15
20
25
30
η
d
40
30
20
10
0
50
IM
5
35
0
40
35
40
45
Input Power P
in
(dBm)
2 tones Output Power P
out
(dBm)
Remark
The graphs indicate nominal characteristics.
Preliminary Data Sheet PU10467EJ01V0DS
3
Drain Efficiency
η
d
(%)
η
d
∆
f = 100 kHz
: f = 885 MHz
: f = 960 MHz
60
50
NEM090603M-28
TYPICAL CHARACTERISTICS (T
A
= +25°C, V
DS
= 28 V, I
Dset
= 550 mA, EDGE Modulation Spectrum
Performance, unless otherwise specified)
SPECTRUM REGROWTH, EVM rms,
DRAIN EFFICIENCY vs. OUTPUT POWER
: f = 885 MHz
: f = 960 MHz
EVM rms (%), Drain Efficiency
η
d
(%)
–30
–40
–50
–60
Hz
600 k
60
Spectrum Regrowth (dBc)
η
d
kHz
400
50
40
30
20
rms
–70
–80
–90
38
EVM
10
0
48
40
42
44
46
Output Power P
out
(dBm)
Remark
The graph indicates nominal characteristics.
4
Preliminary Data Sheet PU10467EJ01V0DS
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