PRELIMINARY DATA SHEET
N-CHANNEL GaAs MES FET
NES1823P-45
45 W L, S-BAND PUSH-PULL POWER GaAs MES FET
DESCRIPTION
The NES1823P-45 is a 45 W push-pull type GaAs MES FET designed for high power transmitter applications for
PCS, DCS, PHS and IMT2000 base station systems. It is capable of delivering 45 W of output power (CW) with high
linear gain, high efficiency and excellent distortion under the condition of 12 V operation. Its primary band is 1.8 to
2.3 GHz, however with different matching, 60 MHz or less of instantaneous bandwidth can be achieved anywhere
from 0.8 to 2.3 GHz. The device employs 0.9
µ
m Tungsten Silicide gates, via holes, plated heat sink, and silicon
dioxide passivation for superior performance, thermal characteristics, and reliability.
Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures.
FEATURES
• Push-pull type N-channel GaAs MES FET
• V
DS
= 12.0 V operation
• High output power: P
out
= 45 W TYP.
• High linear gain: G
L
= 12 dB TYP.
• High power added efficiency:
η
add
= 45 % TYP. @ V
DS
= 12.0 V, I
Dset
= 4.0 A (total), f = 2.20 GHz
ORDERING INFORMATION (PLAN)
Part Number
NES1823P-45
Package
T-86
Supplying Form
ESD protective envelope
Remark
To order evaluation samples, consult your NEC sales representative.
Caution Please handle this device at static-free workstation, because this is an electrostatic
sensitive device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P14752EJ1V0DS00 (1st edition)
Date Published May 2000 NS CP(K)
Printed in Japan
©
2000
NES1823P-45
ABSOLUTE MAXIMUM RATINGS (Unless otherwise specified, T
A
= +25
°
C)
Operation in excess of any one of these parameters may result in permanent damage.
Parameter
Drain to Source Voltage
Gate to Source Voltage
Gate to Drain Voltage
Drain Current
Gate Current
Total Power Dissipation
Channel Temperature
Storage Temperature
Symbol
V
DS
V
GSO
V
GDO
I
D
I
G
P
tot
Note
Ratings
19
−7
−22
24
240
165
175
−65
to +175
Unit
V
V
V
A
mA
W
°C
°C
T
ch
T
stg
Note
T
C
= +25
°C
RECOMMENDED OPERATING CONDITIONS
Parameter
Drain to Source Voltage
Gain Compression
Channel Temperature
Set Drain Current
Gate Resistance
Symbol
V
DS
Gcomp
T
ch
I
Dset
R
g
Note
Test Conditions
MIN.
−
−
−
TYP.
−
−
−
4.0
−
MAX.
12.0
3.0
+150
6.0
30
Unit
V
dB
°C
A
Ω
V
DS
= 12.0 V, RF OFF
−
−
Note
R
g
is the series resistance between the gate supply and the FET gate.
ELECTRICAL CHARACTERISTICS (T
A
= +25
°
C)
Parameter
Saturated Drain Current
Pinch-off Voltage
Thermal Resistance
Output Power
Drain Current
Power Added Efficiency
Linear Gain
3rd Order Intermodulation Distortion
Symbol
I
DSS
V
p
R
th
P
out
I
D
Test Conditions
V
DS
= 2.5 V, V
GS
= 0 V
V
DS
= 2.5 V, I
D
= 110 mA
Channel to Case
f = 2.20 GHz, V
DS
= 12.0 V,
P
in
= 37.5 dBm, R
g
= 30
Ω,
I
Dset
= 4.0 A Total (RF OFF)
Note1
MIN.
−
−4.0
−
45.5
−
−
11
TYP.
24.0
−2.6
0.7
46.5
7
45
12
−40
MAX.
−
−
0.9
−
−
−
−
−
Unit
A
V
°C/W
dBm
A
%
dB
dBc
η
add
G
L
Note2
IM
3
∆
f = 5 MHz,
P
out
= 37 dBm (2 tones total)
−
Notes 1.
I
Dset
= 2.0 A each drain
2.
P
in
= 21 dBm
2
Preliminary Data Sheet P14752EJ1V0DS00
NES1823P-45
TYPICAL CHARACTERISTICS (T
A
= +25
°
C)
OUTPUT POWER,
POWER ADDED EFFICIENCY vs.
INPUT POWER [Power Matched]
50
P
out
45
I
Dset
= 4 A (total)
3 A (total)
40
2 A (total)
35
30
25
20
15
4 A (total)
3 A (total)
2 A (total)
60
20
DRAIN CURRENT, GATE CURRENT
vs. INPUT POWER [Power Matched]
Power Added Efficiency
η
add
(%)
V
DS
= 12.0 V
f = 2.20 GHz (1 tone)
10
I
G
Output Power P
out
(dBm)
50
40
30
20
10
0
45
10
4 A (total)
3 A (total)
5
2 A (total)
I
Dset
= 4 A (total)
3 A (total)
2 A (total)
–10
η
add
V
DS
= 12.0 V
f = 2.20 GHz (1 tone)
20
25
30
35
40
–20
I
D
0
15
20
25
30
35
40
–30
45
Input Power P
in
(dBm)
Input Power P
in
(dBm)
Remark
The graphs indicate nominal characteristics.
Preliminary Data Sheet P14752EJ1V0DS00
3
Gate Current I
G
(mA)
Drain Current I
D
(A)
15
0
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