Technical Data
NSFJ9110
POWER MOSFET - P CHANNEL
•
•
•
•
REPETITIVE AVALANCHE RATINGS
SWITCHING POWER SUPPLIES
CERAMIC LEADLESS CHIP CARRIER
HIGH RELIABILITY
TO-39
ABSOLUTE MAXIMUM RATINGS (T
C
= 25
0
C unless otherwise noted)
Parameters / Test Conditions
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
V
GS
0
Continuous Drain Current
T
C
= 25 C
I
D
Pulsed Drain Current (1)
I
D
0
Power Dissipation
T
C
= 25 C
P
D
Operating Junction & Storage Temperature Range
T
J,
T
stg
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Symbol
Junction-to-Case
RthJC
Junction-to Ambient
RthJA
(1)Pulse width limited by maximum junction temperature.
Value
100
±20
2.5
10
15
-55 to +150
Typ.
Max.
8.3
175
Units
V
V
A
A
W
0
C
Units
K/W
K/W
DIM
A
B
C
D
E
F
G
H
J
K
MILLIMETER
INCHES
MIN
MAX
MIN
MAX
8.51
9.39
0.335
0.370
7.75
8.50
0.305
0.335
6.10
6.60
0.240
0.260
0.23
1.04
0.009
0.041
12.70
19.05
0.500
0.750
0.41
0.53
0.016
0.019
5.08BSC
0.200BSC
45
0
BSC
0.72
0.86
0.028
0.034
0.74
1.14
0.029
0.045
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
04/23/98
1 of 2
POWER MOSFET – N-CHANNEL – NSFJ9110
ELECTRICAL CHARACTERISTICS (T
J
= 25
0
C unless otherwise noted)
PARAMETERS / TEST CONDITIONS
SYMBOL
MIN.
Drain-Source Breakdown Voltage
V
(BR)DSS
-100
V
GS
= 0 V, I
D
= 1.0
µA
Gate Threshold Voltage
V
GS(th)
-2.0
V
DS
= V
GS,
I
D
= -250
µA
Gate-Body Leakage
V
GS
= -20 V
I
GSS
Zero Gate Voltage Drain Current
V
DS
= 0.8 max Rating
,
V
GS
= 0 V
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 80% V
(BR)DSS,
V
GS
= 0 V, T
J
= 125
0
C
I
DSS
Drain-Source On-State Resistance (2)
r
V
GS
= -10 V, I
D
= 1.6 A
DS(on)
Drain-Source On-State Resistance (2)
r
V
GS
= -10 V, I
D
= 2.5 A
DS(on)
Forward Transconductance (2)
g
V
DS
= 15 V, I
D
= 11 A
6.2
fs
Input Capacitance
V
GS
= 0 V
C
iss
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate -Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
V
DS
= 25 V
f = 1.0 MHz
V
DS
= 50% V
(BR)DSS
V
GS
= -10 V, I
D
= -2.5 A
(Gate charge is essentially
independent of operating
temperature.)
V
dd
= -50 V
DS
,
I
D
= 2.5A,
R
G
= 7.5
Ω
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
TYP.
MAX.
UNITS
V
V
-4.0
-100
-25
-250
1.2
1.38
200
85
30
4.0
0.8
1.9
nA
µA
µA
Ω
Ω
S(Ω)
pF
9.8
1.8
4.3
30
60
ns
nC
d(on)
t
r
t
d(off)
40
(Switching
time is
essentially independent of
t
f
Fall Time
40
operating temperature.)
SOURCE-DRAIN DIODE RATINGS & CHARACTERISTICS (T
j
= 25
0
C unless otherwise noted)
PARAMETERS / TEST CONDITIONS
SYMBOL MIN.
TYP.
MAX UNITS
Continuous Current
I
S
-2.5
A
Pulsed Current (1)
I
SM
-10
A
Forward Voltage (2)
I
F
= I
S
, V
GS
= 0 V
V
SD
5.5
V
Reverse Recovery Time
t
rr
200
ns
I
F
= I
S
, dI/dt = 100 A/µs, V
DD
= -50 V
Reverse Recovered Charge
Q
rr
4.0
I
F
= I
S
, dI/dt = 100 A/µs, V
DD
= -50 V
µC
(1)Pulsed width limited by maximum junction temperature.
(2)Pulse Test: Pulse width
<
300
µsec.
Duty cycle
≤
2%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
04/23/98
2 of 2
无线连接
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
