MJE15028, MJE15030 (NPN),
MJE15029, MJE15031 (PNP)
Complementary Silicon
Plastic Power Transistors
These devices are designed for use as high−frequency drivers in
audio amplifiers.
Features
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•
High Current Gain − Bandwidth Product
•
TO−220 Compact Package
•
These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
MJE15028G, MJE15029G
MJE15030G, MJE15031G
Collector−Base Voltage
MJE15028G, MJE15029G
MJE15030G, MJE15031G
Emitter−Base Voltage
Collector Current − Continuous
Collector Current − Peak
Base Current
Total Device Dissipation
@ T
C
= 25_C
Derate above 25°C
Total Device Dissipation
@ T
C
= 25_C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
V
CEO
120
150
V
CB
120
150
V
EB
I
C
I
CM
I
B
P
D
50
0.40
P
D
2.0
0.016
T
J
, T
stg
−65 to +150
W
W/_C
_C
W
W/_C
5.0
8.0
16
2.0
Vdc
Adc
Adc
Adc
Vdc
Value
Unit
Vdc
8 AMPERE
POWER TRANSISTORS
COMPLEMENTARY SILICON
120−150 VOLTS, 50 WATTS
PNP
COLLECTOR
2,4
NPN
COLLECTOR
2,4
1
BASE
3
EMITTER
4
1
BASE
3
EMITTER
TO−220
CASE 221A
STYLE 1
1
2
3
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
Symbol
R
qJC
R
qJA
Max
2.5
62.5
Unit
_C/W
_C/W
MJE150xxG
AY WW
MJE150xx = Device Code
x = 28, 29, 30, or 31
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
ORDERING INFORMATION
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2013
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
1
September, 2013 − Rev. 6
Publication Order Number:
MJE15028/D
MJE15028, MJE15030 (NPN), MJE15029, MJE15031 (PNP)
ELECTRICAL CHARACTERISTICS
(T
C
= 25_C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 1)
(I
C
= 10 mAdc, I
B
= 0)
MJE15028, MJE15029
MJE15030, MJE15031
Collector Cutoff Current
(V
CE
= 120 Vdc, I
B
= 0)
MJE15028, MJE15029
(V
CE
= 150 Vdc, I
B
= 0)
MJE15030, MJE15031
Collector Cutoff Current
(V
CB
= 120 Vdc, I
E
= 0)
MJE15028, MJE15029
(V
CB
= 150 Vdc, I
E
= 0)
MJE15030, MJE15031
Emitter Cutoff Current
(V
BE
= 5.0 Vdc, I
C
= 0)
ON CHARACTERISTICS
(Note 1)
DC Current Gain
(I
C
= 0.1 Adc, V
CE
= 2.0 Vdc)
(I
C
= 2.0 Adc, V
CE
= 2.0 Vdc)
(I
C
= 3.0 Adc, V
CE
= 2.0 Vdc)
(I
C
= 4.0 Adc, V
CE
= 2.0 Vdc)
DC Current Gain Linearity
(V
CE
From 2.0 V to 20 V, I
C
From 0.1 A to 3 A)
(NPN to PNP)
Collector−Emitter Saturation Voltage
(I
C
= 1.0 Adc, I
B
= 0.1 Adc)
Base−Emitter On Voltage
(I
C
= 1.0 Adc, V
CE
= 2.0 Vdc)
DYNAMIC CHARACTERISTICS
Current Gain − Bandwidth Product (Note 2)
(I
C
= 500 mAdc, V
CE
= 10 Vdc, f
test
= 10 MHz)
1. Pulse Test: Pulse Width
≤
300
ms,
Duty Cycle
≤
2.0%.
2. f
T
=
⎪h
fe
⎪•
f
test
.
f
T
30
−
MHz
h
FE
40
40
40
20
h
FE
Typ
2
3
Vdc
−
V
BE(on)
−
1.0
0.5
Vdc
−
−
−
−
−
V
CEO(sus)
120
150
I
CEO
−
−
I
CBO
−
−
I
EBO
−
10
10
10
mAdc
0.1
0.1
mAdc
−
−
mAdc
Vdc
Symbol
Min
Max
Unit
V
CE(sat)
T
A
PD, POWER DISSIPATION (WATTS)
T
C
3.0
60
2.0
40
T
C
1.0
20
T
A
0
0
0
20
40
60
80
100
120
140
160
T, TEMPERATURE (°C)
Figure 1. Power Derating
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2
MJE15028, MJE15030 (NPN), MJE15029, MJE15031 (PNP)
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
0.01
0.01
SINGLE PULSE
0.02
0.05
0.1
0.2
0.5
1.0
D = 0.5
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
0.2
0.1
0.05
0.02
Z
qJC(t)
= r(t) R
qJC
R
qJC
= 1.56°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
- T
C
= P
(pk)
Z
qJC(t)
2.0
5.0
t, TIME (ms)
10
20
50
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
100
200
500
1.0 k
Figure 2. Thermal Response
IC, COLLECTOR CURRENT (AMP)
20
16
10
100
ms
5 ms
dc
1.0
BONDING WIRE LIMITED
THERMALLY LIMITED
SECOND BREAKDOWN
LIMITED @ T
C
= 25°C
0.1
0.02
2.0
MJE15028
MJE15029
MJE15030
MJE15031
5.0
10
50
20
120 150
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
− V
CE
limits of the transistor that must be observed for reliable
operation, i.e., the transistor must not be subjected to greater
dissipation then the curves indicate.
The data of Figures 3 and 4 is based on T
J(pk)
= 150_C;
T
C
is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided T
J(pk)
< 150_C. T
J(pk)
may be calculated from the data in Figure 2.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
Figure 3. Forward Bias Safe Operating Area
8.0
IC, COLLECTOR CURRENT (AMP)
1000
500
C, CAPACITANCE (pF)
C
ib
(NPN)
C
ib
(PNP)
5.0
I
C
/I
B
= 10
T
C
= 25°C
V
BE(off)
= 9 V
5V
3V
1.5 V
0V
100 110 120 130 140 150
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
200
100
50
30
20
10
1.5
3.0
5.0 7.0 10
30
50
V
R
, REVERSE VOLTAGE (VOLTS)
100 150
C
ob
(NPN)
C
ob
(PNP)
3.0
2.0
1.0
0
0
Figure 4. Reverse−Bias Switching
Safe Operating Area
Figure 5. Capacitances
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3
MJE15028, MJE15030 (NPN), MJE15029, MJE15031 (PNP)
fT, CURRENT GAIN-BANDWIDTH PRODUCT (MHz)
100
hfe , SMALL SIGNAL CURRENT GAIN
100
90
(PNP)
(NPN)
60
50
50
30
20
V
CE
= 10 V
I
C
= 0.5 A
T
C
= 25°C
PNP
NPN
10
20
10
0
0.1
0.2
1.0
0.5
2.0
I
C
, COLLECTOR CURRENT (AMP)
5.0
10
5.0
0.5
0.7
1.0
2.0
3.0
f, FREQUENCY (MHz)
5.0
7.0
10
Figure 6. Small−Signal Current Gain
Figure 7. Current Gain−Bandwidth Product
NPN — MJE15028 MJE15030
1K
500
hFE , DC CURRENT GAIN
200
150
100
70
50
30
20
10
0.1
T
J
= 150°C
T
J
= 25°C
T
J
= - 55°C
V
CE
= 2.0 V
hFE , DC CURRENT GAIN
1K
PNP — MJE15029 MJE15031
V
CE
= 2 V
500
T
J
= 150°C
200
100
50
T
J
= 25°C
T
J
= - 55°C
20
10
0.1
0.2
0.5
1.0
2.0
I
C
, COLLECTOR CURRENT (AMP)
5.0
10
0.2
0.5
1.0
2.0
I
C
, COLLECTOR CURRENT (AMP)
5.0
10
Figure 8. DC Current Gain
NPN
PNP
T
J
= 25°C
1.6
V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
1.8
T
J
= 25°C
1.4
1.2
1.0
V
BE(sat)
@ I
C
/I
B
= 10
0.6
V
BE(on)
@ V
CE
= 2.0 V
V
CE(sat)
= I
C
/I
B
= 20
I
C
/I
B
= 10
0.1
0.2
0.5
1.0
2.0
I
C
, COLLECTOR CURRENT (AMP)
5.0
10
1.0
0.8
V
BE(sat)
@ I
C
/I
B
= 10
V
BE(on)
@ V
CE
= 2.0 V
0.4
V
CE(sat)
= I
C
/I
B
= 20
0
0.1
0.2
0.5
1.0
2.0
I
C
, COLLECTOR CURRENT (AMP)
0.2
I
C
/I
B
= 10
5.0
10
Figure 9. “On” Voltage
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4
MJE15028, MJE15030 (NPN), MJE15029, MJE15031 (PNP)
1.0
0.5
0.2
0.1
t
r
(PNP)
V
CC
= 80 V
I
C
/I
B
= 10
T
J
= 25°C
t
d
(NPN, PNP)
t, TIME (
μ
s)
10
5.0
3.0
t, TIME (
μ
s)
2.0
1.0
0.5
t
r
(NPN)
0.2
0.1
0.1
t
f
(NPN)
0.2
0.3
0.5
2.0
I
C
, COLLECTOR CURRENT (AMP)
5.0
10
t
f
(PNP)
t
s
(PNP)
V
CC
= 80 V
I
C
/I
B
= 10, I
B1
= I
B2
t
s
(NPN) T
J
= 25°C
0.05
0.03
0.02
0.01
0.1
0.2
0.5
1.0
2.0
I
C
, COLLECTOR CURRENT (AMP)
5.0
10
Figure 10. Turn−On Times
Figure 11. Turn−Off Times
ORDERING INFORMATION
Device
MJE15028G
MJE15029G
MJE15030G
MJE15031G
Package
TO−220
(Pb−Free)
TO−220
(Pb−Free)
TO−220
(Pb−Free)
TO−220
(Pb−Free)
Shipping
50 Units / Rail
50 Units / Rail
50 Units / Rail
50 Units / Rail
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