Amplifier Transistors
NPN Silicon
3
COLLECTOR
MMBT6428LT1
MMBT6429LT1
3
1
BASE
2
EMITTER
1
2
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Symbol
V
CEO
V
CBO
V
EBO
Value
6428LT1 6429LT1
Unit
50
60
6.0
200
45
55
Vdc
Vdc
Vdc
mAdc
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
I
C
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
P
D
Max
225
1.8
R
θJA
P
D
556
300
2.4
R
θJA
T
J
, T
stg
417
–55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
DEVICE MARKING
MMBT6428LT1 = 1KM, MMBT6429LT1 = 1L
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(3)
(I
C
= 1.0 mAdc, I
B
= 0)
(I
C
= 1.0 mAdc, I
B
= 0)
Collector–Base Breakdown Voltage
(I
C
= 0.1mAdc, I
E
= 0)
(I
C
= 0.1mAdc, I
E
= 0)
Collector Cutoff Current
( V
CE
= 30Vdc, )
Collector Cutoff Current
( V
CB
= 30Vdc, I
E
= 0 )
Emitter Cutoff Current
( V
EB
= 5.0Vdc, I
C
= 0)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
I
CBO
—
I
EBO
—
0.01
0.01
µAdc
MMBT6428
MMBT6429
I
CBO
—
0.1
µAdc
MMBT6428
MMBT6429
V
(BR)CBO
60
55
—
—
µAdc
V
(BR)CEO
50
45
—
—
Vdc
Vdc
DB LECTRO Inc. 3600 boul. Matte suite i Brossard Qc J4Y-2Z2 tel:(450)-444-1424 fax:(450)-444-4714 www.dblectro.com
MMBT6428LT1 MMBT6429LT1
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
h
FE
MMBT6428
MMBT6429
MMBT6428
MMBT6429
MMBT6428
MMBT6429
MMBT6428
MMBT6429
V
CE(sat)
––
––
V
BE(on)
Min
Max
Unit
––
ON CHARACTERISTICS
DC Current Gain
(I
C
= 0.01 mAdc, V
CE
= 5.0 Vdc)
(I
C
= 0.1 mAdc, V
CE
= 5.0Vdc)
(I
C
= 1.0 mAdc, V
CE
= 5.0Vdc)
(I
C
= 10 mAdc, V
CE
= 5.0Vdc)
Collector–Emitter Saturation Voltage
(I
C
= 10 mAdc, I
B
= 0.5 mAdc)
(I
C
= 100 mAdc, I
B
= 0.5 mAdc)
Base–Emitter On Voltage
(I
C
= 1.0 mAdc, V
CE
= 5.0mAdc)
250
500
250
500
250
500
250
500
—
—
650
1250
—
—
—
—
Vdc
0.2
0.6
0.66
Vdc
0.56
SMALL–SIGNAL CHARACTERISTICS
Current Gain–Bandwidth Product
(V
CE
= 5.0 Vdc, I
C
= 1.0mAdc, f = 100 MHz)
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 1.0 MHz)
Input Capacitance
(V
EB
= 0.5 Vdc, I
C
= 0 , f = 1.0 MHz)
f
T
C
obo
C
ibo
100
––
––
700
3.0
8.0
MHz
pF
pF
R
S
i
n
e
n
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
DB LECTRO Inc. 3600 boul. Matte suite i Brossard Qc J4Y-2Z2 tel:(450)-444-1424 fax:(450)-444-4714 www.dblectro.com
MMBT6428LT1 MMBT6429LT1
NOISE CHARACTERISTICS
(V
CE
= 5.0 Vdc, T
A
= 25°C)
NOISE VOLTAGE
30
30
BANDWIDTH = 1.0 Hz
BANDWIDTH = 1.0 Hz
e
n
, NOISE VOLTAGE (nV)
I
C
= 10 mA
R
S
~0
~
e
n
, NOISE VOLTAGE (nV)
20
20
R
S
~ 0
~
f = 10 Hz
10
10
3.0 mA
1.0 mA
100 Hz
7.0
5.0
7.0
10 kHz
5.0
1.0 kHz
300
µA
3.0
10
20
50 100 200
500
1k
2k
5k
10k 20k
50k 100k
100 kHz
3.0
0.01 0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
f, FREQUENCY (Hz)
I
C
, COLLECTOR CURRENT (mA)
Figure 2. Effects of Frequency
10
7.0
5.0
2.0
Figure 3. Effects of Collector Current
BANDWIDTH = 1.0 Hz
NF, NOISE FIGURE (dB)
I
C
= 10 mA
3.0 mA
1.0 mA
300
µA
100
µA
10
µA
50 100 200
500
1k
2k
I
n
, NOISE CURRENT (pA)
16
BANDWIDTH = 10 Hz to 15.7 kHz
12
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
8.0
500
µA
100
µA
I
C
= 1.0 mA
4.0
10
µA
30
µA
5k
10k 20k
50k 100k
0
10
20
50 100 200
500
1k
2k
5k
10k 20k
50k 100k
R
S
~ 0
~
10
20
f, FREQUENCY (Hz)
R
S
, SOURCE RESISTANCE (Ω)
Figure 4. Noise Current
100 Hz NOISE DATA
300
20
Figure 5. Wideband Noise Figure
V
T
, TOTAL NOISE VOLTAGE (nV)
200
BANDWIDTH = 1.0 Hz
3.0 mA
1.0 mA
300
µA
I
C
= 10 mA
100
70
50
30
20
10
7.0
5.0
3.0
10
20
50 100 200
500
NF, NOISE FIGURE (dB)
16
I
C
= 10 mA
3.0 mA
1.0 mA
12
100
µA
30
µA
10
µA
300
µA
8.0
100
µA
4.0
30
µA
BANDWIDTH = 1.0 Hz
10
µA
0
1k
2k
5k
10k 20k
50k 100k
10
20
50 100 200
500
1k
2k
5k
10k 20k
50k 100k
R
S
, SOURCE RESISTANCE (Ω)
R
S
, SOURCE RESISTANCE (Ω)
Figure 6. Total Noise Voltage
Figure 7. Noise Figure
DB LECTRO Inc. 3600 boul. Matte suite i Brossard Qc J4Y-2Z2 tel:(450)-444-1424 fax:(450)-444-4714 www.dblectro.com
MMBT6428LT1 MMBT6429LT1
h
FE
, DC CURRENT GAIN (NORMALIZED)
4.0
3.0
V
CE
= 5.0 V
2.0
T
A
= 125°C
25°C
1.0
–55°C
0.7
0.5
0.4
0.3
0.2
0.01
0.02
0.03
0.05
0.1
0.2
0.3
0.5
1.0
2.0
3.0
5.0
10
I
C
, COLLECTOR CURRENT (mA)
Figure 8. DC Current Gain
R
θVBE
, BASE– EMITTER
TEMPERATURE COEFFICIENT (mV/ °C)
1.0
–0.4
T
J
= 25°C
0.8
–0.8
V, VOLTAGE (VOLTS)
0.6
V
BE
@ V
CE
= 5.0 V
–1.2
0.4
–1.6
T
J
= 25°C to 125°C
0.2
–2.0
–55°C to 25°C
–2.4
0.01 0.02 0.05
0.1 0.2
0.5
1.0 2.0
5.0
10
20
50
100
V
CE(sat)
@ I
C
/I
B
= 10
0
0.01 0.02 0.05 0.1 0.2
0.5
1.0 2.0
5.0
10
20
50
100
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 9. “On” Voltages
8.0
6.0
Figure 10. Temperature Coefficients
f
T
, CURRENT– GAIN — BANDWIDTH
PRODUCT (MHz)
50
T
J
= 25°C
C
ob
C
eb
C
cb
C
ib
300
C, CAPACITANCE (pF)
4.0
3.0
200
2.0
100
V
CE
= 5.0 V
70
50
1.0
2.0
3.0
5.0
7.0 10
20
30
50
70
100
1.0
0.8
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
T
J
= 25°C
V
R
, REVERSE VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (mA)
Figure 11. Capacitance
Figure 12. Current–Gain — Bandwidth Product
DB LECTRO Inc. 3600 boul. Matte suite i Brossard Qc J4Y-2Z2 tel:(450)-444-1424 fax:(450)-444-4714 www.dblectro.com
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