Philips Semiconductors
Product specification
2-input OR gate
FEATURES
•
Symmetrical output impedance
•
High noise immunity
•
ESD protection:
– HBM EIA/JESD22-A114-A exceeds 2000 V
– MM EIA/JESD22-A115-A exceeds 200 V
– CDM EIA/JESD22-C101 exceeds 1000 V.
•
Low power dissipation
•
Balanced propagation delays
•
Multiple very small 5-pin packages
•
Output capability: standard
•
Specified from
−40
to +125
°C.
QUICK REFERENCE DATA
GND = 0 V; T
amb
= 25
°C;
t
r
= t
f
≤
3.0 ns.
74AHC1G32; 74AHCT1G32
DESCRIPTION
The 74AHC1G/AHCT1G32 is a high-speed Si-gate CMOS
device.
The 74AHC1G/AHCT1G32 provides the 2-input
OR function.
TYPICAL
SYMBOL
t
PHL
/t
PLH
C
I
C
PD
Notes
1. C
PD
is used to determine the dynamic power dissipation (P
D
in
µW).
P
D
= C
PD
×
V
CC2
×
f
i
+ (C
L
×
V
CC2
×
f
o
) where:
f
i
= input frequency in MHz;
f
o
= output frequency in MHz;
C
L
= output load capacitance in pF;
V
CC
= supply voltage in Volts.
2. V
I
= GND to V
CC
.
PARAMETER
CONDITIONS
AHC1G
propagation delay A and B to Y C
L
= 15 pF; V
CC
= 5 V
input capacitance
power dissipation capacitance
C
L
= 50 pF; f = 1 MHz;
notes 1 and 2
3.2
1.5
16
AHCT1G
3.3
1.5
17
ns
pF
pF
UNIT
2002 Jun 05
2
Philips Semiconductors
Product specification
2-input OR gate
74AHC1G32; 74AHCT1G32
handbook, halfpage
1
2
≥1
handbook, halfpage
4
B
Y
MNA165
A
MNA166
Fig.3 IEC logic symbol.
Fig.4 Logic diagram.
RECOMMENDED OPERATING CONDITIONS
74AHC1G
SYMBOL
V
CC
V
I
V
O
T
amb
t
r
, t
f
PARAMETER
supply voltage
input voltage
output voltage
operating ambient
temperature
input rise and fall
times
CONDITIONS
MIN.
2.0
0
0
see DC and AC
−40
characteristics per device
V
CC
= 3.3
±0.3
V
V
CC
= 5
±0.5
V
−
−
TYP.
5.0
−
−
+25
−
−
MAX.
5.5
5.5
V
CC
+125
100
20
MIN.
4.5
0
0
−40
−
−
TYP.
5.0
−
−
+25
−
−
MAX.
5.5
5.5
V
CC
+125
−
20
V
V
V
°C
ns/V
ns/V
74AHCT1G
UNIT
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V).
SYMBOL
V
CC
V
I
I
IK
I
OK
I
O
I
CC
T
stg
P
D
Note
1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
PARAMETER
supply voltage
input voltage
input diode current
output diode current
output source or sink current
V
CC
or GND current
storage temperature
power dissipation per package
for temperature range from
−40
to +125
°C
V
I
<
−0.5
V
V
O
<
−0.5
V or V
O
> V
CC
+ 0.5 V; note 1
−0.5
V < V
O
< V
CC
+ 0.5 V
CONDITIONS
MIN.
−0.5
−0.5
−
−
−
−
−65
−
MAX.
+7.0
+7.0
−20
±20
±25
±75
+150
250
UNIT
V
V
mA
mA
mA
mA
°C
mW
2002 Jun 05
4
传感器
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
