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SMMUN2214LT1: 产品描述100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, CASE 318-08, TO-236, 3 PIN; 产品类别分立半导体晶体管; 文件大小139KB，共17页; 制造商ON Semiconductor(安森美); 官网地址http://www.onsemi.cn

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SMMUN2214LT1概述

100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, CASE 318-08, TO-236, 3 PIN

SMMUN2214LT1规格参数

参数名称	属性值
是否Rohs认证	不符合
厂商名称	ON Semiconductor(安森美)
零件包装代码	SOT-23
包装说明	CASE 318-08, TO-236, 3 PIN
针数	3
制造商包装代码	CASE 318-08
Reach Compliance Code	not_compliant
ECCN代码	EAR99
其他特性	BUILT-IN BIAS RESISTOR RATIO IS 4.7
最大集电极电流 (IC)	0.1 A
集电极-发射极最大电压	50 V
配置	SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)	80
JEDEC-95代码	TO-236AB
JESD-30 代码	R-PDSO-G3
JESD-609代码	e0
湿度敏感等级	1
元件数量	1
端子数量	3
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
峰值回流温度（摄氏度）	240
极性/信道类型	NPN
认证状态	Not Qualified
表面贴装	YES
端子面层	Tin/Lead (Sn/Pb)
端子形式	GULL WING
端子位置	DUAL
处于峰值回流温度下的最长时间	30
晶体管应用	SWITCHING
晶体管元件材料	SILICON

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MMUN2211LT1 Series

Preferred Devices

Bias Resistor Transistor

NPN Silicon Surface Mount Transistor

with Monolithic Bias Resistor Network

This new series of digital transistors is designed to replace a single

device and its external resistor bias network. The BRT (Bias Resistor

Transistor) contains a single transistor with a monolithic bias network

consisting of two resistors; a series base resistor and a base‐emitter

resistor. The BRT eliminates these individual components by

integrating them into a single device. The use of a BRT can reduce

both system cost and board space. The device is housed in the

SOT‐23 package which is designed for low power surface mount

applications.

Features

http://onsemi.com

PIN 1

BASE

(INPUT)

PIN 3

COLLECTOR

(OUTPUT)

PIN 2

EMITTER

(GROUND)

•

Simplifies Circuit Design

•

Reduces Board Space and Component Count

•

Pb-Free Packages are Available

MAXIMUM RATINGS

= 25°C unless otherwise noted)

Rating

Collector‐Base Voltage

Collector‐Emitter Voltage

Collector Current

Symbol

CBO

CEO

Value

100

Unit

Vdc

mAdc

SOT-23

CASE 318

STYLE 6

MARKING DIAGRAM

A8x M

THERMAL CHARACTERISTICS

Characteristic

Total Device Dissipation

= 25°C

Derate above 25°C

Thermal Resistance, Junction‐to‐Ambient

Thermal Resistance, Junction‐to‐Lead

Junction and Storage Temperature

Range

Symbol

Max

246 (Note 1)

400 (Note 2)

1.5 (Note 1)

2.0 (Note 2)

508 (Note 1)

311 (Note 2)

174 (Note 1)

208 (Note 2)

- 55 to +150

Unit

°C/W

°C

A8x = Specific Device Code

= Date Code

= Pb-Free Package

(Note: Microdot may be in either location)

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 16 of this data sheet.

Preferred

devices are recommended choices for future use

and best overall value.

qJA

qJL

, T

stg

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. FR-4 @ minimum pad

2. FR-4 @ 1.0 x 1.0 inch pad

Semiconductor Components Industries, LLC, 2007

December, 2007 - Rev. 9

Publication Order Number:

MMUN2211LT1/D

SMMUN2214LT1相似产品对比

	SMMUN2214LT1	SMMUN2213LT1	SMMUN2211LT1	SMMUN2233LT1	SMMUN2216LT1	SMMUN2211LT3
描述	100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, CASE 318-08, TO-236, 3 PIN	100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, CASE 318-08, TO-236, 3 PIN	100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, CASE 318-08, TO-236, 3 PIN	100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, CASE 318-08, TO-236, 3 PIN	100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, CASE 318-08, TO-236, 3 PIN	100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, CASE 318-08, TO-236, 3 PIN
是否Rohs认证	不符合	不符合	不符合	不符合	不符合	不符合
厂商名称	ON Semiconductor(安森美)	ON Semiconductor(安森美)	ON Semiconductor(安森美)	ON Semiconductor(安森美)	ON Semiconductor(安森美)	ON Semiconductor(安森美)
零件包装代码	SOT-23	SOT-23	SOT-23	SOT-23	SOT-23	SOT-23
包装说明	CASE 318-08, TO-236, 3 PIN	CASE 318-08, TO-236, 3 PIN	CASE 318-08, TO-236, 3 PIN	SMALL OUTLINE, R-PDSO-G3	CASE 318-08, TO-236, 3 PIN	CASE 318-08, TO-236, 3 PIN
针数	3	3	3	3	3	3
制造商包装代码	CASE 318-08	CASE 318-08	CASE 318-08	CASE 318-08	CASE 318-08	CASE 318-08
Reach Compliance Code	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
其他特性	BUILT-IN BIAS RESISTOR RATIO IS 4.7	BUILT-IN BIAS RESISTOR RATIO IS 1	BUILT-IN BIAS RESISTOR RATIO IS 1	-	BUILT-IN BIAS RESISTOR	BUILT-IN BIAS RESISTOR RATIO IS 1
最大集电极电流 (IC)	0.1 A	0.1 A	0.1 A	-	0.1 A	0.1 A
集电极-发射极最大电压	50 V	50 V	50 V	-	50 V	50 V
配置	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	-	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)	80	80	35	-	160	35
JEDEC-95代码	TO-236AB	TO-236AB	TO-236AB	-	TO-236AB	TO-236AB
JESD-30 代码	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	-	R-PDSO-G3	R-PDSO-G3
JESD-609代码	e0	e0	e0	-	e0	e0
湿度敏感等级	1	1	1	-	1	1
元件数量	1	1	1	-	1	1
端子数量	3	3	3	-	3	3
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	-	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	-	SMALL OUTLINE	SMALL OUTLINE
峰值回流温度（摄氏度）	240	240	240	-	240	240
极性/信道类型	NPN	NPN	NPN	-	NPN	NPN
认证状态	Not Qualified	Not Qualified	Not Qualified	-	Not Qualified	Not Qualified
表面贴装	YES	YES	YES	-	YES	YES
端子面层	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	-	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
端子形式	GULL WING	GULL WING	GULL WING	-	GULL WING	GULL WING
端子位置	DUAL	DUAL	DUAL	-	DUAL	DUAL
处于峰值回流温度下的最长时间	30	30	30	-	30	30
晶体管应用	SWITCHING	SWITCHING	SWITCHING	-	SWITCHING	SWITCHING
晶体管元件材料	SILICON	SILICON	SILICON	-	SILICON	SILICON

SMMUN2214LT1

SMMUN2214LT1概述

SMMUN2214LT1规格参数

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SMMUN2214LT1相似产品对比

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