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MMUN2211LT1 Series
Preferred Devices
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base‐emitter
resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space. The device is housed in the
SOT‐23 package which is designed for low power surface mount
applications.
Features
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R1
PIN 1
BASE
(INPUT)
R2
PIN 3
COLLECTOR
(OUTPUT)
PIN 2
EMITTER
(GROUND)
•
Simplifies Circuit Design
•
Reduces Board Space and Component Count
•
Pb-Free Packages are Available
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
Rating
Collector‐Base Voltage
Collector‐Emitter Voltage
Collector Current
Symbol
V
CBO
V
CEO
I
C
Value
50
50
100
Unit
Vdc
Vdc
mAdc
SOT-23
CASE 318
STYLE 6
MARKING DIAGRAM
A8x M
G
G
1
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction‐to‐Ambient
Thermal Resistance, Junction‐to‐Lead
Junction and Storage Temperature
Range
Symbol
P
D
Max
246 (Note 1)
400 (Note 2)
1.5 (Note 1)
2.0 (Note 2)
508 (Note 1)
311 (Note 2)
174 (Note 1)
208 (Note 2)
- 55 to +150
Unit
mW
°C/W
°C/W
°C/W
°C
A8x = Specific Device Code
M
= Date Code
G
= Pb-Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 16 of this data sheet.
Preferred
devices are recommended choices for future use
and best overall value.
R
qJA
R
qJL
T
J
, T
stg
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR-4 @ minimum pad
2. FR-4 @ 1.0 x 1.0 inch pad
©
Semiconductor Components Industries, LLC, 2007
December, 2007 - Rev. 9
Publication Order Number:
MMUN2211LT1/D
MMUN2211LT1 Series
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector‐Base Cutoff Current (V
CB
= 50 V, I
E
= 0)
Collector‐Emitter Cutoff Current (V
CE
= 50 V, I
B
= 0)
Emitter‐Base Cutoff Current
(V
EB
= 6.0 V, I
C
= 0)
MMUN2211LT1, G
MMUN2212LT1, G
MMUN2213LT1, G
MMUN2214LT1, G
MMUN2215LT1, G
MMUN2216LT1, G
MMUN2230LT1, G
MMUN2231LT1, G
MMUN2232LT1, G
MMUN2233LT1, G
MMUN2234LT1, G
MMUN2238LT1, G
MMUN2241LT1, G
I
CBO
I
CEO
I
EBO
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
50
50
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
100
500
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
4.0
0.1
-
-
nAdc
nAdc
mAdc
Collector‐Base Breakdown Voltage (I
C
= 10
mA,
I
E
= 0)
Collector‐Emitter Breakdown Voltage (Note 3), (I
C
= 2.0 mA, I
B
= 0)
V
(BR)CBO
V
(BR)CEO
Vdc
Vdc
ON CHARACTERISTICS
(Note 3)
DC Current Gain
(V
CE
= 10 V, I
C
= 5.0 mA)
MMUN2211LT1, G
MMUN2212LT1, G
MMUN2213LT1, G
MMUN2214LT1, G
MMUN2215LT1, G
MMUN2216LT1, G
MMUN2230LT1, G
MMUN2231LT1, G
MMUN2232LT1, G
MMUN2233LT1, G
MMUN2234LT1, G
MMUN2238LT1, G
MMUN2241LT1, G
MMUN2211LT1, G
MMUN2212LT1, G
MMUN2213LT1, G
MMUN2214LT1, G
MMUN2233LT1, G
MMUN2234LT1, G
MMUN2215LT1, G
MMUN2216LT1, G
MMUN2232LT1, G
MMUN2238LT1, G
MMUN2230LT1, G
MMUN2231LT1, G
MMUN2241LT1, G
h
FE
35
60
80
80
160
160
3.0
8.0
15
80
80
160
160
-
-
-
-
-
-
-
-
-
-
-
-
-
60
100
140
140
350
350
5.0
15
30
200
150
350
350
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Vdc
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
Collector‐Emitter Saturation Voltage
(I
C
= 10 mA, I
B
= 0.3 mA)
V
CE(sat)
(I
C
= 10 mA, I
B
= 1 mA)
(I
C
= 10 mA, I
B
= 5 mA)
3. Pulse Test: Pulse Width < 300
ms,
Duty Cycle < 2.0%.
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2
MMUN2211LT1 Series
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
(Note 4)
Output Voltage (on)
(V
CC
= 5.0 V, V
B
= 2.5 V, R
L
= 1.0 kW)
V
OL
MMUN2211LT1, G
MMUN2212LT1, G
MMUN2214LT1, G
MMUN2215LT1, G
MMUN2216LT1, G
MMUN2230LT1, G
MMUN2231LT1, G
MMUN2232LT1, G
MMUN2233LT1, G
MMUN2234LT1, G
MMUN2238LT1, G
MMUN2213LT1, G
MMUN2241LT1, G
V
OH
MMUN2211LT1, G
MMUN2212LT1, G
MMUN2213LT1, G
MMUN2214LT1, G
MMUN2233LT1, G
MMUN2230LT1, G
MMUN2234LT1, G
MMUN2215LT1, G
MMUN2216LT1, G
MMUN2231LT1, G
MMUN2232LT1, G
MMUN2238LT1, G
MMUN2241LT1, G
MMUN2211LT1, G
MMUN2212LT1, G
MMUN2213LT1, G
MMUN2214LT1, G
MMUN2215LT1, G
MMUN2216LT1, G
MMUN2230LT1, G
MMUN2231LT1, G
MMUN2232LT1, G
MMUN2233LT1, G
MMUN2234LT1, G
MMUN2238LT1, G
MMUN2241LT1, G
MMUN2211LT1, G
MMUN2212LT1, G
MMUN2213LT1, G
MMUN2214LT1, G
MMUN2215LT1, G
MMUN2216LT1, G
MMUN2230LT1, G
MMUN2231LT1, G
MMUN2232LT1, G
MMUN2233LT1, G
MMUN2234LT1, G
MMUN2238LT1, G
MMUN2241LT1, G
R1
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
1.54
70
0.8
0.8
0.8
0.17
-
-
0.8
0.8
0.8
0.055
0.38
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
100
1.0
1.0
1.0
0.21
-
-
1.0
1.0
1.0
0.1
0.47
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
2.88
130
1.2
1.2
1.2
0.25
-
-
1.2
1.2
1.2
0.185
0.56
-
-
kW
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
Vdc
Vdc
(V
CC
= 5.0 V, V
B
= 3.5 V, R
L
= 1.0 kW)
(V
CC
= 5.0 V, V
B
= 5.0 V, R
L
= 1.0 kW)
Output Voltage (off)
(V
CC
= 5.0 V, V
B
= 0.5 V, R
L
= 1.0 kW)
(V
CC
= 5.0 V, V
B
= 0.05 V, R
L
= 1.0 kW)
(V
CC
= 5.0 V, V
B
= 0.25 V, R
L
= 1.0 kW)
Input Resistor
Resistor Ratio
R1/R2
4. Pulse Test: Pulse Width < 300
ms,
Duty Cycle < 2.0%.
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3
MMUN2211LT1 Series
TYPICAL ELECTRICAL CHARACTERISTICS - MMUN2211LT1
V
CE(sat),
MAXIMUM COLLECTOR VOLTAGE
(V)
P
D,
POWER DISSIPATION (MILLIWATTS)
250
1
I
C
/I
B
= 10
T
A
= -25°C
25°C
75°C
200
0.1
150
100
R
qJA
= 625°C/W
0.01
50
0
-50
0
50
100
150
0.001
0
20
40
60
80
T
A
, AMBIENT TEMPERATURE (5°C)
I
C
, COLLECTOR CURRENT (mA)
Figure 1. Derating Curve
h
FE,
DC CURRENT GAIN (NORMALIZED)
1000
V
CE
= 10 V
T
A
= 75°C
25°C
-25°C
100
C
ob,
CAPACITANCE (pF)
3
4
Figure 2. V
CE(sat)
vs. I
C
f = 1 MHz
l
E
= 0 A
T
A
= 25°C
2
1
10
1
10
I
C
, COLLECTOR CURRENT (mA)
100
0
0
10
20
30
40
50
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
Figure 3. DC Current Gain
100
I
C,
COLLECTOR CURRENT (mA)
75°C
V
in,
INPUT VOLTAGE (V)
10
T
A
= -25°C
10
Figure 4. Output Capcitance
25°C
V
O
= 0.2 V
T
A
= -25°C
25°C
75°C
1
1
0.1
0.01
V
O
= 5 V
0
1
2
3
4
5
6
7
8
9
10
0.001
0.1
0
V
in
, INPUT VOLTAGE (VOLTS)
10
20
30
40
I
C
, COLLECTOR CURRENT (mA)
50
Figure 5. Output Current vs. Input Voltage
Figure 6. Input Voltage vs. Output Current
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