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MJD122

产品描述Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin, PLASTIC, DPACK-3
产品类别分立半导体    晶体管   
文件大小156KB,共3页
制造商Micro Commercial Components (MCC)
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MJD122概述

Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin, PLASTIC, DPACK-3

MJD122规格参数

参数名称属性值
厂商名称Micro Commercial Components (MCC)
零件包装代码TO-252
包装说明PLASTIC, DPACK-3
针数3
Reach Compliance Codecompliant
ECCN代码EAR99
最大集电极电流 (IC)8 A
集电极-发射极最大电压100 V
配置SINGLE
最小直流电流增益 (hFE)100
JESD-30 代码R-PSSO-G2
JESD-609代码e0
元件数量1
端子数量2
最高工作温度150 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
极性/信道类型NPN
认证状态Not Qualified
表面贴装YES
端子面层TIN LEAD
端子形式GULL WING
端子位置SINGLE
晶体管元件材料SILICON

文档预览

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MCC
Micro Commercial Components
TM
  omponents
20736 Marilla
Street Chatsworth

  !"#
$ %    !"#
MJD122
Features
High DC Current Gain
Electrically similar to popular TIP 122
Built-in a damper diode at E-C
Case Material: Molded Plastic.
Classification Rating 94V-0
UL Flammability
Silicon
NPN epitaxial planer
Transistors
Maximum Ratings @ 25
O
C Unless Otherwise Specified
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
C
T
J
T
STG
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Dissipation
Operating Junction Temperature
Storage Temperature
O
Rating
100
100
5
8
1.5
150
-55 to +150
Unit
V
V
V
A
W
DPACK
S
A
1
G
2
3
D
B F
V
Electrical Characteristics @ 25 C Unless Otherwise Specified
Symbol
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
h
FE
Parameter
Collector-Emitter Breakdown Voltage
(I
C
=30mAdc, I
B
=0)
Collector-Base Breakdown Voltage
(I
C
=1mAdc, I
E
=0)
Collector-Emitter Breakdown Voltage
(I
E
=3mAdc, I
C
=0)
Collector Cutoff Current
(V
CB
=100Vdc, I
E
=0)
Collector emitter cutoff Current
(V
CE
=50Vdc, I
E
=0)
Emitter Cutoff Current
(V
EB
=5Vdc, I
C
=0)
DC Current Gain
(I
C
=-4Adc, V
CE
=-4Vdc)
(I
C
=-8Adc, V
CE
=-4Vdc)
V
CE(sat)
Collector-Emitter Saturation Voltage
(I
C
=4Adc, I
B
=16mAdc)
(I
C
=8Adc, I
B
=80mAdc)
V
BE(sat)
V
BE
C
ob
Base-Emitter Saturation Voltage
(I
C
=8Adc, I
B
=80mAdc)
Base-Emitter Saturation Voltage
(I
C
=4Adc, V
CE
=4Vdc )
Output Capacitance
(V
CB
=10Vdc, f=0.1MHz, I
E
=0)
Min
100
100
5
---
---
---
1000
100
---
---
---
---
---
---
---
---
---
---
2
4
4.5
2.8
200
Vdc
Vdc
Vdc
Vdc
pF
Typ
---
---
---
---
---
---
---
Max
---
---
---
10
10
2
12000
DIM
A
B
C
D
E
F
G
J
K
S
V
Units
Vdc
Vdc
Vdc
nAdc
nAdc
nAdc
DIMENSIONS
INCHES
MIN
0.235
0.205
0.086
0.025
0.035
0.250
0.090
0.018
0.020
0.370
0.035
0.023
---
0.410
0.050
0.48
0.51
9.40
0.88
MAX
0.245
0.215
0.094
0.035
0.045
0.265
MIN
5.97
5.21
2.19
0.64
0.99
6.35
2.28
0.58
---
10.42
1.27
MM
MAX
6.22
5.46
2.38
0.89
1.14
6.73
NOTE
C
J
E
K
PIN 1.
PIN 2.
PIN 3.
BASE
COLLECTOR
EMITTER
www.mccsemi.com
Revision:
1
1 of 3
2007/09/12

 
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