MMBZ5225-V-G to MMBZ5267-V-G
Vishay Semiconductors
Small Signal Zener Diodes
Features
• Silicon planar power zener diodes
• Standard zener voltage tolerance is ± 5 %
with a “B” suffix (e.g.: MMBZ5225B-V-G),
suffix “C” is ± 2 % tolerance
• High temperature soldering guaranteed:
260 °C/4 x 10 s at terminals
• Compliant to RoHS directive 2002/95/EC
and in accordance to WEEE 2002/96/EC
• AEC-Q101 qualified
3
1
2
18078
Mechanical Data
Case:
SOT23
Weight:
approx. 8.8 mg
Packaging codes/options:
-18/10K per 13" reel (8 mm tape), 10K/box
-08/3K per 7" reel (8 mm tape), 15K/box
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Zener current
(see table “Characteristics”)
Power dissipation
Notes
1)
2)
Test condition
Symbol
Value
Unit
T
A
= 25 °C
P
tot
P
tot
225
1)
300
2)
mW
mW
On FR - 5 board using recommended solder pad layout
On alumina substrate
Thermal Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Thermal resistance junction to
ambient air
Maximum junction temperature
Storage temperature range
Note
1)
Test condition
Symbol
R
thJA
T
j
T
S
Value
556
1)
150
- 65 to + 175
Unit
°C/W
°C
°C
On FR - 5 board using recommended solder pad layout
** Please see document “Vishay Material Category Policy”:
www.vishay.com/doc?99902
Document Number 85183
Rev. 1.0, 19-Oct-09
For technical support, please contact:
DiodesSSP@vishay.com
www.vishay.com
1
MMBZ5225-V-G to MMBZ5267-V-G
Vishay Semiconductors
Electrical Characteristics
T
amb
= 25 ° unless otherwise noted; Maximum V
F
= 0.9 V at I
F
= 10 mA
Nominal
Zener
Part number
Marking
code
voltage
2)
V
Z
at I
ZT1
V
MMBZ5225-V-G
MMBZ5226-V-G
MMBZ5227-V-G
MMBZ5228-V-G
MMBZ5229-V-G
MMBZ5230-V-G
MMBZ5231-V-G
MMBZ5232-V-G
MMBZ5233-V-G
MMBZ5234-V-G
MMBZ5235-V-G
MMBZ5236-V-G
MMBZ5237-V-G
MMBZ5238-V-G
MMBZ5239-V-G
MMBZ5240-V-G
MMBZ5241-V-G
MMBZ5242-V-G
MMBZ5243-V-G
MMBZ5244-V-G
MMBZ5245-V-G
MMBZ5246-V-G
MMBZ5247-V-G
MMBZ5248-V-G
MMBZ5249-V-G
MMBZ5250-V-G
MMBZ5251-V-G
MMBZ5252-V-G
MMBZ5253-V-G
MMBZ5254-V-G
MMBZ5255-V-G
MMBZ5256-V-G
MMBZ5257-V-G
MMBZ5258-V-G
MMBZ5259-V-G
MMBZ5260-V-G
MMBZ5261-V-G
MMBZ5262-V-G
MMBZ5263-V-G
MMBZ5264-V-G
MMBZ5265-V-G
MMBZ5266-V-G
MMBZ5267-V-G
Notes
The zener Impedance is derived from the 1 kHz AC voltage which results when an AC current having an RMS value equal to 10 % of the
zener current (I
ZT
or I
ZK
) is superimposed on I
ZT
or I
ZK
. Zener Impedance is measured at two points to insure a sharp knee on the break-
down curve and to eliminate unstable units.
2)
1)
Test current
Maximum dynamic
impedance
Z
ZT
at I
ZT
Ω
30
28
24
23
22
19
17
11
7
7
5
6
8
8
10
17
22
30
13
15
16
17
19
21
23
25
29
33
35
41
44
49
58
70
80
93
105
125
150
170
185
230
270
1)
Typical
temp.
of
coefficient
α
VZ
%/°C
- 0.075
- 0.07
- 0.065
- 0.06
- 0.055
± 0.030
± 0.030
0.038
0.038
0.045
0.05
0.058
0.062
0.065
0.068
0.075
0.076
0.077
0.079
0.082
0.082
0.083
0.084
0.085
0.086
0.086
0.087
0.087
0.089
0.090
0.091
0.091
0.092
0.093
0.094
0.095
0.095
0.096
0.096
0.097
0.097
0.097
0.098
Maximum reverse
leakage current
I
R
μA
50
25
15
10
5
5
5
5
5
5
3
3
3
3
3
3
2
1
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
V
R
V
1
1
1
1
1
2
2
3
3.5
4
5
6
6.5
6.5
7
8
8.4
9.1
9.9
10
11
12
13
14
14
15
17
18
19
21
21
23
25
27
30
33
36
39
43
46
47
52
56
I
ZT1
mA
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
9.5
9
8.5
7.8
7.4
7
6.6
6.2
5.6
5.2
5
4.6
4.5
4.2
3.8
3.4
3.2
3
2.7
2.5
2.2
2.1
2
1.8
1.7
Z
ZK
at I
ZK
=
0.25 mA
Ω
1600
1600
1700
1900
2000
1900
1600
1600
1600
1000
750
500
500
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
700
700
800
900
1000
1100
1300
1400
1400
1600
1700
725
726
727
728
729
730
731
732
733
734
735
736
737
738
739
740
741
742
743
744
745
746
747
748
749
750
751
752
753
754
755
756
757
758
759
760
761
762
763
764
765
766
767
3
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6
6.2
6.8
7.5
8.2
8.7
9.1
10
11
12
13
14
15
16
17
18
19
20
22
24
25
27
28
30
33
36
39
43
47
51
56
60
62
68
75
Measured at thermal equilibrium.
For technical support, please contact:
DiodesSSP@vishay.com
Document Number 85183
Rev. 1.0, 19-Oct-09
www.vishay.com
2
MMBZ5225-V-G to MMBZ5267-V-G
Vishay Semiconductors
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
mA
10
3
10
2
°C/W
10
3
7
5
4
3
2
I
F
10
1
10
10
10
10
-1
R
thA
T
J
= 100 °C
0.5
0.2
0.1
0.05
0.02
0.01
V
=0
10
2
7
5
4
3
2
T
J
= 25 °C
-2
10
-3
-4
7
5
4
3
2
t
p
t
p
T
T
P
I
10
-5
0
18114
0.2
0.4
0.6
0.8
1V
1
10
-5
18116
10
-4
10
-3
10
-2
10
-1
1
10s
V
F
t
p
Figure 1. Forward Characteristics
Figure 4. Pulse Thermal Resistance vs. Pulse Duration
pF
1000
7
5
4
3
2
T
J
= 25 °C
C
tot
V
R
= 1
V
V
R
= 2
V
100
7
5
4
3
2
V
R
= 1
V
V
R
= 2
V
10
1
18118
2
3
4 5
10
2
3 4 5
100
V
V
Z
at I
Z
= 5 mA
Figure 2. Capacitance vs. Zener Voltage
mW
250
P
tot
200
150
100
50
0
18672
0
100
200 °C
T
amb
Figure 3. Admissible Power Dissipation vs. Ambient Temperature
Document Number 85183
Rev. 1.0, 19-Oct-09
For technical support, please contact:
DiodesSSP@vishay.com
www.vishay.com
3
MMBZ5225-V-G to MMBZ5267-V-G
Vishay Semiconductors
Package Dimensions
in millimeters (inches)
3.1 (0.122)
2.8 (0.110)
0.1 (0.004) max.
0.550 ref. (0.022 ref.)
1.15 (0.045)
0.9 (0.035)
2.6 (0.102)
2.35 (0.093)
0.45 (0.018)
0.35 (0.014)
Mounting pad layout
1.43 (0.056)
1.20 (0.047)
0.7 (0.028)
0.95 (0.037)
0.9 (0.035)
0.175 (0.007)
0.098 (0.004)
0.2 (0.008)
0.5 (0.020)
0.3 (0.012)
0.45 (0.018)
0.35 (0.014)
0.45 (0.018)
0.35 (0.014)
3
1
2
1 (0.039)
0.9 (0.035)
1 (0.039)
0.9 (0.035)
Document no.: 6.541-5014.01-4
Rev.
8
- Date: 23. Sep. 2009
17418
www.vishay.com
4
For technical support, please contact:
DiodesSSP@vishay.com
2 (0.079)
0.95 (0.037)
Document Number 85183
Rev. 1.0, 19-Oct-09
0° t
o
8
°
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Vishay
Disclaimer
All product specifications and data are subject to change without notice.
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(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
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Document Number: 91000
Revision: 18-Jul-08
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