MA4P HIPAX
™
High Power PIN Diodes
Features
♦
♦
♦
♦
♦
♦
♦
♦
♦
High Power Handling
Low Loss / Low Distortion
Voltage Ratings up to 1000 Volts
Passivated Chip for Low Leakage Current
Low Theta (θ) Due to Full Face Chip Bonding
Leadless Low Inductance MELF Packages
Various Package Options
Available as Chips
Fully RoHS Compliant
V12
Package Styles
401 & 402
1072 & 1091
Description
M/A-COM Technology Solutions MELF and HIPAX
PIN diode series are designed for usage in switch
and attenuator applications requiring high power
handling and low distortion. The MELF and HIPAX
PIN diodes incorporate a fully passivated PIN diode
chip resulting in an extremely low reverse bias
leakage current. The semiconductor technology
utilized in the MELF and HIPAX families draws on
M/A-COM Tech’s substantial experience in PIN
diode design and wafer fabrication. The result is a
device which has a thick
I-region
and long carrier
lifetime while maintaining low series resistance and
capacitance values. The chips of the MELF and
HIPAX PIN diodes are enclosed in a rugged
ceramic package and is full face bonded to metal
pins on both the anode and cathode. The result is a
low loss PIN diode with low thermal resistance due
to symmetrical thermal paths. The parts are offered
in either magnetic or non-magnetic, HIPAX (axial
leaded) or
Metal Electrode Leadless Faced (MELF)
surface mount packages for MRI applications. The
MELF is a rectangular SMQ, package which is
designed for high volume tape and reel assembly.
This easy to use package design makes automatic
pick and place, indexing and assembly, extremely
easy. The parallel flat surfaces are suitable for most
key jaw or vacuum pick-up techniques. All of the
solderable surfaces are tin plated and compatible
with industry standard reflow and vapor phase
soldering processes. See page 7 of Application
Note
M538
on the
M/A-COM Technology Solutions
website for a typical solder reflow profile.
Applications
HIPAX PIN diodes are designed for use in a wide
variety of switch and attenuator applications from HF
through UHF frequencies and at power levels above
1kW, CW. The internal chip as well as each diode
assembly has been comprehensively tested and
characterized to ensure predictable and repeatable
performance.
Design Recommendations
♦
Low Distortion Attenuators
•
MA4P4301B
♦
Surface Mount Switches
•
MA4P7101F
♦
Cellular Radio Antenna Switches
•
MA4P1200, MA4P1250
Absolute Maximum Ratings
T
AMB
= +25°C
(Unless Otherwise Noted)
1
Parameter
Absolute Maximum
D.C. Reverse Voltage (V
R
)
Operating Chip Junction
Temperature
Storage Temperature
Installation Temperature
ESD
(See Tables)
-55°C to +175°C
-55°C to +200°C
+280°C for 30 Seconds
Class 1A, HBM
Notes
1. Operation of this device above any one of these
parameters may cause permanent damage.
1
•
North America
Tel: 800.366.2266 •
Europe
Tel: +353.21.244.6400
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
•
India
Tel: +91.80.4155721
•
China
Tel: +86.21.2407.1588
and/or prototype measurements. Commitment to develop is not guaranteed.
Visit www.macomtech.com for additional data sheets and product information.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
MA4P HIPAX
™
High Power PIN Diodes
MA4P1000 Series Electrical Specifications @ T
AMB
= +25°C
V
R
Reverse Voltage
V
DC
Part Number
(NM Indicates Non-Magnetic)
V12
C
T
Total Capacitance
pF
Conditions
f = 1 MHz
V
R
= 50 V
R
S
Series Resistance
Ω
Conditions
f = 100 MHz
I
F
= 50 mA
R
P
Parallel Resistance
kΩ
Conditions
f = 100 MHz
V
R
= 0 V
MINIMUM
5
5
5
5
5
5
Condition
I
R
= 10
μA
MINIMUM
MA4P1200 - 401T
MA4P1200NM - 401T
MA4P1250 -1072T
MA4P1250NM -1072T
MA4P1450 -1091T
MA4P1450NM -1091T
50
50
50
50
50
50
MAXIMUM
TYPICAL MAXIMUM TYPICAL MAXIMUM
RATING
100
1.2
1.5
0.5
0.75
100
1.2
1.5
0.5
0.75
100
100
100
100
0.8
0.8
1.8
1.8
1.2
1.2
2.5
2.5
0.5
0.5
0.5
0.5
0.75
0.75
0.75
0.75
V
F
Forward Voltage
Part Number
(NM Indicates Non-Magnetic)
T
L
Carrier Lifetime
Conditions
I
F
= 10 mA
(Max.
I
Forward
@
1V
≤
1.5A)
Forward Bias
Reverse Bias
Harmonic Distortion Harmonic Distortion
R(2a/a) * R(3a/a)
R(2a/a) – R(3a/a)
Conditions
f = 100 MHz
Conditions
f = 100 MHz
Condition
I
F
= 50 mA
TYPICAL
MA4P1200 - 401T
MA4P1200NM - 401T
MA4P1250 -1072T
MA4P1250NM -1072T
MA4P1450 -1091T
MA4P1450NM -1091T
0.85
0.85
0.85
0.85
0.85
0.85
MAXIMUM
MINIMUM TYPICAL MINIMUM TYPICAL MINIMUM TYPICAL
RATING
1.0
2
8
80
90
60
70
1.0
1.0
1.0
1.0
1.0
2
2
2
2
2
8
8
8
8
8
80
80
80
80
80
90
90
90
90
90
60
60
60
60
60
70
70
70
70
70
Power Dissipation and Thermal Resistance Ratings @ T
AMB
= +25°C
Package
Style
B
Axial Lead
F
MELF
CONDITION
No Heatsink
Lead Length 1/4"
No Heatsink
Infinite Heatsink
MA4P1200(NM)-401T
P
DISS
θ
JC
1.5 W
15°C/W
5.5W
MA4P1250(NM)-1072T
P
DISS
θ
JC
—
—
—
6W
18W
—
15°C/W
MA4P1450(NM)-1091T
P
DISS
θ
JC
—
—
—
10W
30W
—
5°C/W
2
•
North America
Tel: 800.366.2266 •
Europe
Tel: +353.21.244.6400
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
•
India
Tel: +91.80.4155721
•
China
Tel: +86.21.2407.1588
and/or prototype measurements. Commitment to develop is not guaranteed.
Visit www.macomtech.com for additional data sheets and product information.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
MA4P HIPAX
™
High Power PIN Diodes
Typical Performance Curves @ T
AMB
= +25°C
MA4P1200 Series
Series Resistance @ 100 MHz vs. Forward Current
Capacitance vs. Frequency & Reverse Bias
V12
Series Resistance
Capacitance
Ω
pF
MHz
Frequency
Forward Current
Parallel Resistance vs. Frequency & Reverse Bias
Heatsink Temperature vs. Max. Power Dissipation
Maximum Power Dissipation
Parallel Resistance
Ω
MHz
Frequency
Watts
°C
Heatsink Temperature
3
•
North America
Tel: 800.366.2266 •
Europe
Tel: +353.21.244.6400
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
•
India
Tel: +91.80.4155721
•
China
Tel: +86.21.2407.1588
and/or prototype measurements. Commitment to develop is not guaranteed.
Visit www.macomtech.com for additional data sheets and product information.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
MA4P HIPAX
™
High Power PIN Diodes
Typical Performance Curves @ T
AMB
= +25°C
MA4P1250 Series
Series Resistance @ 100 MHz vs. Forward Current
Capacitance vs. Frequency & Reverse Bias
V12
Series Resistance
Capacitance
Ω
pF
Forward Current
MHz
Frequency
Parallel Resistance vs. Frequency & Reverse Bias
Carrier Lifetime vs. Forward Bias Current
Parallel Resistance
Ω
MHz
Frequency
Carrier Lifetime
Forward Current
4
•
North America
Tel: 800.366.2266 •
Europe
Tel: +353.21.244.6400
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
•
India
Tel: +91.80.4155721
•
China
Tel: +86.21.2407.1588
and/or prototype measurements. Commitment to develop is not guaranteed.
Visit www.macomtech.com for additional data sheets and product information.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
MA4P HIPAX
™
High Power PIN Diodes
Typical Performance Curves @ T
AMB
= +25°C
MA4P1450 Series
Series Resistance @ 100 MHz vs. Forward Current
V12
Capacitance vs. Frequency and Reverse Bias
Series Resistance
Capacitance
pF
Ω
MHz
Forward Current
Frequency
Parallel Resistance vs. Frequency and Reverse Bias
Parallel Resistance
Ω
MHz
Frequency
5
•
North America
Tel: 800.366.2266 •
Europe
Tel: +353.21.244.6400
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
•
India
Tel: +91.80.4155721
•
China
Tel: +86.21.2407.1588
and/or prototype measurements. Commitment to develop is not guaranteed.
Visit www.macomtech.com for additional data sheets and product information.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
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