MITSUBISHI RF MOSFET MODULE
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RA18H1213G
1.24-1.30GHz 18W 12.5V MOBILE RADIO
BLOCK DIAGRAM
DESCRIPTION
The RA18H1213G is a 18-watt RF MOSFET Amplifier
Module for 12.5-volt mobile radios that operate in the 1.24- to
1.30-GHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage (V
GG
=0V), only a small leakage current flows into the
drain and the RF input signal attenuates up to 60 dB. The output
power and drain current increase as the gate voltage increases.
With a gate voltage around 4V (minimum), output power and
drain current increases substantially. The nominal output power
becomes available at 4.5V (typical) and 5V (maximum). At
V
GG
=5V, the typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but may
also be used for linear modulation by setting the drain quiescent
current with the gate voltage and controlling the output power with
the input power.
FEATURES
• Enhancement-Mode MOSFET Transistors
(I
DD
≅0
@ V
DD
=12.5V, V
GG
=0V)
2
3
1
4
5
TENTATIVE
1
3
4
5
RF Input (P
in
)
2
Gate Voltage (V
GG
), Power Control
Drain Voltage (V
DD
), Battery
RF Output (P
out
)
RF Ground (Case)
• P
out
>18W,
η
T
>30%(TBD) @ V
DD
=12.5V, V
GG
=5V,
P
in
=100mW(TBD)
• Broadband Frequency Range: 1.24-1.30GHz
• Low-Power Control Current I
GG
=1mA (typ) at V
GG
=5V
• Module Size: 66 x 21 x 9.88 mm
• Linear operation is possible by setting the quiescent drain
current with the gate voltage and controlling the output power
with the input power
ORDERING INFORMATION:
ORDER NUMBER
RA18H1213G-E01
RA18H1213G-01
(Japan - packed without desiccator)
SUPPLY FORM
Antistatic tray,
10 modules/tray
RA18H1213G
MITSUBISHI ELECTRIC
1/9
7 April 2003
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RA18H1213G
RATING
17
6
200(TBD)
30
-30 to +110
-40 to +110
UNIT
V
V
mW
W
°C
°C
MAXIMUM RATINGS
(T
case
=+25°C, unless otherwise specified)
SYMBOL PARAMETER
V
DD
V
GG
P
in
P
out
T
case(OP)
T
stg
Drain Voltage
Gate Voltage
Input Power
Output Power
Operation Case Temperature Range
Storage Temperature Range
CONDITIONS
V
GG
<5V
V
DD
<12.5V, P
in
=0mW
f=1.24-1.30GHz,
Z
G
=Z
L
=50Ω
The above parameters are independently guaranteed.
ELECTRICAL CHARACTERISTICS
(T
case
=+25°C, Z
G
=Z
L
=50Ω, unless otherwise specified)
SYMBOL PARAMETER
f
P
out
η
T
2f
o
ρ
in
I
GG
—
—
Frequency Range
Output Power
2
nd
CONDITIONS
MIN
1.24
18
TYP
MAX
1.30
UNIT
GHz
W
%
TENTATIVE
Total Efficiency
Harmonic
Input VSWR
30(TBD)
V
DD
=12.5V, V
GG
=5V, P
in
=100mW(TBD)
-30
3:1
—
Gate Current
Stability
1
mA
—
Load VSWR Tolerance
V
DD
=10.0-15.5V, P
in
=50-150mW(TBD),
P
out
=1 to 18W (V
GG
control), Load VSWR=3:1
V
DD
=15.2V, P
in
=100mW(TBD),
P
out
=18W (V
GG
control), Load VSWR=8:1
No parasitic oscillation
No degradation or destroy
—
dBc
All parameters, conditions, ratings, and limits are subject to change without notice.
RA18H1213G
MITSUBISHI ELECTRIC
2/9
7 April 2003
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RA18H1213G
TYPICAL PERFORMANCE
(T
case
=+25°C, Z
G
=Z
L
=50Ω, unless otherwise specified)
Now Preparing
RA18H1213G
MITSUBISHI ELECTRIC
3/9
7 April 2003
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RA18H1213G
TYPICAL PERFORMANCE
(T
case
=+25°C, Z
G
=Z
L
=50Ω, unless otherwise specified)
Now Preparing
RA18H1213G
MITSUBISHI ELECTRIC
4/9
7 April 2003
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