Silicon RF Power Semiconductors
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD70HHF1
DRAWING
25.0+/-0.3
7.0+/-0.5 11.0+/-0.3
1
RoHS Compliance,
DESCRIPTION
Silicon MOSFET Power Transistor 30MHz,70W
OUTLINE
RD70HHF1 is a MOS FET type transistor specifically
designed for HF High power amplifiers applications.
4-C2
24.0+/-0.6
FEATURES
High power and High Gain:
Pout>70W, Gp>13dB @Vdd=12.5V,f=30MHz
High Efficiency: 60%typ.on HF Band
2
10.0+/-0.3
9.6+/-0.3
3
R1.6+/-0.15
0.1
-0.01
4.5+/-0.7
6.2+/-0.7
+0.05
APPLICATION
For output stage of high power amplifiers in HF
Band mobile radio sets.
5.0+/-0.3
18.5+/-0.3
RD70HHF1-101
is a RoHS compliant products.
RoHS compliance is indicate by the letter “G” after
the Lot Marking.
3.3+/-0.2
RoHS COMPLIANT
PIN
1.DRAIN
2.SOURCE
3.GATE
UNIT:mm
ABSOLUTE MAXIMUM RATINGS
(Tc=25
°C
UNLESS OTHERWISE NOTED)
SYMBOL
V
DSS
V
GSS
Pch
Pin
ID
Tch
Tstg
Rth j-c
PARAMETER
Drain to source voltage
Gate to source voltage
Channel dissipation
Input power
Drain current
Channel Temperature
Storage temperature
Thermal resistance
CONDITIONS
Vgs=0V
Vds=0V
Tc=25
°C
Zg=Zl=50
Ω
-
-
-
junction to case
RATINGS
50
+/-20
150
5
20
175
-40 to +175
1.0
UNIT
V
V
W
W
A
°C
°C
°C/W
Note 1: Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS
(Tc=25deg.C , UNLESS OTHERWISE NOTED)
SYMBOL
I
DSS
I
GSS
V
TH
Pout
ηD
PARAMETER
Drain cutoff current
Gate cutoff current
Gate threshold voltage
Output power
Drain efficiency
Load VSWR tolerance
CONDITIONS
V
DS
=17V, V
GS
=0V
V
GS
=10V, V
DS
=0V
V
DS
=12V, I
DS
=1mA
f=30MHz ,V
DD
=12.5V
Pin=3.5W,Idq=1.0A
V
DD
=15.2V,Po=70W(Pin Control)
f=30MHz,Idq=1.0A,Zg=50
Ω
Load VSWR=20:1(All Phase)
LIMITS
MIN
TYP MAX.
-
-
10
-
-
1
1.5
-
4.5
70
80
-
55
60
-
No destroy
UNIT
uA
uA
V
W
%
-
Note : Above parameters , ratings , limits and conditions are subject to change.
RD70HHF1
17 Aug 2010
1/8
Silicon RF Power Semiconductors
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD70HHF1
Vgs-Ids CHARACTERISTICS
10
Ta=+25°C
Vds=10V
RoHS Compliance,
TYPICAL CHARACTERISTICS
200
CHANNEL DISSIPATION Pch(W)
...
160
120
80
40
0
0
40
80
120
160
AMBIENT TEMPERATURE Ta(°C)
200
CHANNEL DISSIPATION VS.
AMBIENT TEMPERATURE
Silicon MOSFET Power Transistor 30MHz,70W
8
6
4
2
0
0
1
2
3
4
Vgs(V)
5
6
7
Vds-Ids CHARACTERISTICS
10
Ta=+25°C
Ids(A)
Vds VS. Ciss CHARACTERISTICS
300
250
200
Ciss(pF)
Ta=+25°C
f=1MHz
8
6
Ids(A)
Vgs=6V
Vgs=5.7V
150
100
4
2
Vgs=5.4V
Vgs=5.1V
Vgs=4.8V
Vgs=4.5V
Vgs=4.2V
50
0
0
10
Vds(V)
20
30
0
0
2
4
6
Vds(V)
8
10
Vds VS. Coss CHARACTERISTICS
500
400
300
200
100
0
0
10
Vds(V)
20
30
Ta=+25°C
f=1MHz
Vds VS. Crss CHARACTERISTICS
40
Ta=+25°C
f=1MHz
30
Crss(pF)
Coss(pF)
20
10
0
0
10
Vds(V)
20
30
RD70HHF1
17 Aug 2010
2/8
Silicon RF Power Semiconductors
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD70HHF1
Pin-Po CHARACTERISTICS
Po
RoHS Compliance,
TYPICAL CHARACTERISTICS
Pin-Po CHARACTERISTICS
50
Po(dBm) , Gp(dB) ,
Idd(A)
40
30
20
10
Ｉ½½
Ta=+25°C
f=30MHz
Vdd=12.5V
Idq=1A
Po
Silicon MOSFET Power Transistor 30MHz,70W
100
Pout(W) , Idd(A)
80
ηd(%)
100
80
60
40
20
0
0
1
100
ηd
80
60
ηd(%)
17 Aug 2010
Gp
η½
60
40
20
0
0
10
20
Pin(dBm)
30
Idd
Ta=25°C
f=30MHz
Vdd=12.5V
Idq=1A
40
20
0
0
2
3
Pin(W)
4
Vdd-Po CHARACTERISTICS
120
100
80
Po(W)
60
40
20
0
2
4
6
8
10
Vdd(V)
12
14
Ta=25°C
f=30MHz
Pin=3.5W
Idq=1A
Zg=ZI=50 ohm
Po
Vgs-Ids CHARACTORISTICS 2
+25°C
30
25
20
Idd(A)
10
8
6
4
2
0
0
1
2
3
4
Vgs(V)
5
6
7
Vds=10V
Tc=-25~+75°C
Idd
15
10
5
0
Ids(A)
+75°C
-25°C
Vgs-
g
m CHARACTORISTICS
6
5
4
Vds=10V
Tc=-25~+75°C
g
m(S)
3
2
1
0
0
1
2
3
4
Vgs(V)
+75°C
-25°C
+25°C
5
6
RD70HHF1
3/8
Silicon RF Power Semiconductors
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD70HHF1
RoHS Compliance,
TEST CIRCUIT(f=30MHz)
Silicon MOSFET Power Transistor 30MHz,70W
Vgg
Vdd
330uF,50V
C1
L2
C1
220pF
C1
C2
RF-IN
1 OHM
220pF
L3
10K OHM
33uF,50V
330 OHM
200pF
180pF L1
C1
68pF*3
330pF
33pF
47pF
RF-OUT
L4
180pF
200pF
68pF*3
330pF
33pF
1000pF
47pF
16
25
78
89
93
100
4.5
16
20
23
26
43
58
61
66
92
100
12
8
C1:100pF, 0.022uF, 0.1uF in parallel
C2:470pF*2 in parallel
L1:8Turns,I.D8mm,D1.6mm silver plateted copper wire
L2:10Turns,I.D8mm,D1.6mm silver plateted copper wire
L3:5Turns,I.D6mm,D0.7mm copper wire P=0.5mm
L4:1Turn,I.D10mm,D1.6mm silver plateted copper wire
Dimensions:mm
14
Note:Board material-teflon substrate
micro strip line width=4.2mm / 50 OHM,er:2.7,t=1.6mm
RD70HHF1
17 Aug 2010
4/8
Silicon RF Power Semiconductors
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD70HHF1
Zo=10Ω
RoHS Compliance,
Silicon MOSFET Power Transistor 30MHz,70W
INPUT/OUTPUT IMPEDANCE VS.FREQUENCY CHARACTERISTICS
f=30MHz Zout
f=30MHz Zin
Zin , Zout
f
(MHz)
30
Zin
(ohm)
5.28-j20.08
Zout
(ohm)
0.77-j0.22
Conditions
Po=97W,
Vdd=12.5V,Pin=3.5W
RD70HHF1
17 Aug 2010
5/8
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