PTFB213004F
Confidential, Limited Internal Distribution
High Power RF LDMOS Field Effect Transistor
300 W, 2110 – 2170 MHz
Description
The PTFB213004F is a 300-watt LDMOS FET designed for class
AB operation in cellular amplifiers covering the 2110 to 2170 MHz
frequency band. Features include high peak power, input and
output match, and a thermally-enhanced, open-cavity earless ceramic
package.
PTFB213004F
Package H-37275-6/2
Features
V
DD
= 30 V, I
DQ
= 2.4 A, ƒ = 2170 MHz,
3GPP WCDMA signal, PAR = 7.5 dB,
3.84 MHz bandwidth
-10
-20
50
40
30
Single-carrier WCDMA Drive-up
•
•
•
•
Broadband internal matching
Enhanced for use in DPD error correction systems
Wide video bandwidth
Typical single-carrier WCDMA performance at
2170 MHz, 30 V
- P
OUT
= 49.5 dBm Avg
- Gain = 17.5 dB
- Efficiency = 30%
Increased negative gate-source voltage range for
improved performance in Doherty amplifiers
Capable of handling 10:1 VSWR @ 30 V, 300 W
(CW) output power
Excellent thermal stability
Integrated ESD protection
Pb-free and RoHS-compliant
ACP Up & Low (dBc)
-30
-40
-50
-60
34
38
42
Drain Efficiency (%)
Efficiency
•
•
•
•
•
ACP low
20
10
ACP up
46
50
54
0
Output Power, avg. (dBm)
RF Characteristics
Two-carrier WCDMA Measurements
(tested in Infineon test fixture)
V
DD
= 30 V, I
DQ
= 2.4 A, P
OUT
= 60 W average,
ƒ
1
= 2167.5 MHz, ƒ
2
= 2172.5 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, PAR = 7.5 dB @ 0.01% CCDF
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol
G
ps
Min
17
25
—
Typ
18
26.5
–36
Max
—
—
–33
Unit
dB
%
dBc
h
D
IMD
All published data at T
CASE
= 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 16
Rev. 05.2, 2010-12-09
PTFB213004F
Confidential, Limited Internal Distribution
RF Characteristics
(cont.)
V
DD
= 30 V, I
DQ
= 2.4 A, P
OUT
= 250 W PEP, ƒ = 2140 MHz, tone spacing = 1 MHz
Two-tone Measurements
(not subject to production test—verified by design / characterization in Infineon test fixture)
Characteristic
Gain
Symbol
G
ps
hD
IMD
Min
—
—
—
Typ
18
37
–30
Max
—
—
—
Unit
dB
%
dBc
Drain Efficiency
Intermodulation Distortion
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
Conditions
V
GS
= 0 V, I
DS
= 10 µA
V
DS
= 30 V, V
GS
= 0 V
V
DS
= 63 V, V
GS
= 0 V
Symbol
V
(BR)DSS
I
DSS
I
DSS
R
DS(on)
V
GS
I
GSS
Min
65
—
—
—
2.3
—
Typ
—
—
—
0.03
2.8
—
Max
—
1.0
10.0
—
3.3
1.0
Unit
V
µA
µA
W
V
µA
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
V
GS
= 10 V, V
DS
= 0.1 A
V
DS
= 30 V, I
DQ
= 2.4 A
V
GS
= 10 V, V
DS
= 0 V
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Storage Temperature Range
Thermal Resistance (T
CASE
= 70°C )
Symbol
V
DSS
V
GS
T
J
T
STG
R
qJC
Value
–0.5 to +65
–6 to +10
200
–40 to +150
0.23
Unit
V
V
°C
°C
°C/W
Ordering Information
Type and Version
PTFB213004F V2
Package Outline
H-37275-6/2
Package Description
Thermally-enhanced earless flange
Thermally-enhanced earless flange
Shipping
Tray
Tape & Reel
PTFB213004F V2 R250 H-37275-6/2
Data Sheet
2 of 16
Rev. 05.2, 2010-12-09
PTFB213004F
Confidential, Limited Internal Distribution
Typical Performance
(data taken in a production test fixture)
V
DD
= 30 V, I
DQ
= 2.4 A, 3GPP WCDMA signal,
PAR = 8 dB, 10 MHz carrier spacing, 3.84 MHz BW
19
Two-carrier WCDMA Drive-up
V
DD
= 30 V, I
DQ
= 2.4 A, ƒ = 2170 MHz,
3GPP WCDMA signal, PAR = 8 dB,
10 MHz carrier spacing, 3.85 MHz BW
40
Two-carrier WCDMA Drive-up
Intermodulation Distortion (dBc)
-30
IM3 Up
Gain (db)
-40
17
20
-50
IM3 Low
16
10
Efficiency
15
35
39
43
47
51
35
39
43
47
51
0
-60
Output Power, Avg. (dBm)
Output Power (dBm)
V
DD
= 30 V, I
DQ
= 2.4 A, ƒ = 2170 MHz,
3GPP WCDMA signal, PAR = 8 dB,
10 MHz carrier spacing, 3.84 MHz BW
-25
45
60
50
40
30
20
10
2060
Two-carrier WCDMA Drive-up
Two-tone Broadband Performance
V
DD
= 30 V, I
DQ
= 2.4 A, P
O UT
= 126 W
0
IMD (dBc), ACPR (dBc)
-35
35
Gain (dB), Efficiency (%)
Return Loss
Efficiency
-10
-20
-30
-40
-50
IMD Up
-45
25
IMD 3
Gain
-55
ACPR
Efficiency
15
-65
36
40
44
48
52
5
2100
Output Power, avg. (dBm)
Frequency (MHz)
2140
2180
2220
Data Sheet
3 of 16
Rev. 05.2, 2010-12-09
Return Loss (dB), IMD (dBc)
IMD Low
Drain Efficiency (%)
Drain Efficiency (%)
2170 MHz
2140 MHz
2110 MHz
18
Gain
30
PTFB213004F
Confidential, Limited Internal Distribution
Typical Performance
(cont.)
V
DD
= 30 V, I
DQ
= 2.4 A,
ƒ
1
= 2170 MHz, ƒ
2
= 2169 MHz
-20
-30
-40
-50
-60
-70
38
43
48
53
58
50
40
19.0
Two-tone Drive-up
Gain & Efficiency vs. Output Power
V
DD
= 30 V, I
DQ
= 2.4 A, ƒ = 2170 MHz
45
40
Efficiency (%)
IMD (dBc)
30
30
IMD 3
Gain (db)
18.0
25
20
15
Efficiency
20
10
0
17.5
Efficiency
17.0
39
43
47
51
55
10
5
0
Output Power, PEP (dBm)
Output Power (dBm)
(P
O UT
max 3rd order IMD @ –30dBc)
V
DD
= 30 V, I
DQ
= 2.4 A,
ƒ
1
= 2140.5 MHz, ƒ
2
= 2139.5 MHz
21
20
19
60
Two-tone Drive-up (over temp)
Two-tone IMD vs. Output Power
V
DD
= 30 V, I
DQ
= 2.4 A,
tone spacing = 1 MHz
40
Drain Efficiency (%)
IMD 3rd Order (dBc)
+25°C
+85°C
–30°C
-15
-25
-35
-45
-55
-65
-75
39
43
47
51
55
50
Gain (dB)
2170 MHz
2140 MHz
2110 MHz
18
17
16
15
Gain
30
20
Efficiency
36
40
44
48
52
10
0
Output Power (dBm)
Output Power, Avg. (dBm)
Data Sheet
4 of 16
Rev. 05.2, 2010-12-09
Drain Efficiency (%)
18.5
Gain
35
PTFB213004F
Confidential, Limited Internal Distribution
Typical Performance
(cont.)
Two-tone IMD vs. Output Power
V
DD
= 30 V, I
DQ
= 2.4 A,
ƒ
1
= 2170 MHz, ƒ
2
= 2169 MHz
V
DD
= 30 V, I
DQ
= 2.4 A, ƒ = 2140 MHz,
P
O UT
= 251 W (PEP)
-15
Intermodulation Distortion vs.
Tone Spacing
-15
Intermodulation Distortion (dBc)
-25
-35
3rd Order
5th
-25
-35
-45
-55
-65
0
IM3
IM5
IMD (dBc)
-45
-55
-65
-75
39
43
47
51
Output Power, Avg. (dBm)
55
7th
IM7
10
20
30
40
50
60
70
80
Tone Spacing (MHz)
Output PAR Compression (PARC)
,
2170 MHz
V
DD
= 30 V, I
DQ
= 2.4 A, ƒ = 2170 MHz,
single-carrier 3GPP WCDMA signal,
input PAR = 7.5 dB, 3.84 MHz BW
Output PAR Compression (PARC)
,
2140 MHz
V
DD
= 30 V, I
DQ
= 2.4 A, ƒ = 2140 MHz,
single-carrier 3GPP WCDMA signal,
input PAR = 7.5 dB, 3.84 MHz BW
Gain
20
60
40
20
60
40
20
PARC, PARC Gain (dB)
20
Efficiency
10
Efficiency (%) / ACP (dBc)
15
15
0
-20
-40
Efficiency
10
0
-20
-40
PARC @ .01% CCDF
PARC @ .01% CCDF
5
5
ACP
0
36
40
44
48
52
56
-60
-80
ACP
0
36
40
44
48
52
56
-60
-80
Output Power, avg. (dBm)
Output Power, avg. (dBm)
Data Sheet
5 of 16
Rev. 05.2, 2010-12-09
Efficiency (%) / ACP (dBc)
Gain
PARC, PARC Gain (dB)
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