Phototransistors
PNZ1270
Silicon NPN Phototransistor
Unit : mm
For optical control systems
0.5±0.1
M
Di ain
sc te
on na
tin nc
ue e/
d
Features
High sensitivity
ø1.8
1
Type number : Emitter mark (Blue)
10.0 min.
10.0 min.
3.2±0.3 3.2±0.3
2.2±0.15
(0.7)
1.8
2.8±0.2 1.8
Small size designed for easier mounting to printed circuit board
1.05±0.1
Fast response : t
r
= 2.5
µs
(typ.)
R0.9
2.8±0.2
Absolute Maximum Ratings
(Ta = 25˚C)
Parameter
Symbol
V
CEO
V
ECO
I
C
P
C
Ratings
20
5
20
50
Unit
V
V
Collector to emitter voltage
Emitter to collector voltage
Collector current
0.85
±
0.15
mA
˚C
Collector power dissipation
Storage temperature
mW
˚C
Operating ambient temperature
T
opr
T
stg
–25 to +85
–30 to +100
Electro-Optical Characteristics
(Ta = 25˚C)
I
CEO
λ
P
θ
nt
in
Dark current
ue
Parameter
Symbol
I
CE(L)*3
Conditions
min
0.8
typ
1
max
100
19.2
0.15
1: Collector
2: Emitter
Unit
nA
mA
nm
µs
V
CE
= 10V
V
CE
= 10V
Collector photo current
Acceptance half angle
Rise time
Fall time
V
CE
= 10V, L = 1000 lx
*1
Peak sensitivity wavelength
co
800
14
2.5
is
Measured from the optical axis to the half power point
deg.
µs
/D
ce
t
r*2
t
f*2
V
CC
= 10V, I
CE(L)
= 1mA, R
L
= 100Ω
*2
nt
en
*1
Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.
Switching time measurement circuit
ai
Sig.IN
an
3.5
V
CC
M
(Input pulse)
Sig.OUT (Output pulse)
90%
10%
t
f
,,
,,
,,
50Ω
R
L
t
d
t
r
t
d
: Delay time
t
r
: Rise time (Time required for the collector photo current to
increase from 10% to 90% of its final value)
t
f
: Fall time (Time required for the collector photo current to
decrease from 90% to 10% of its initial value)
*3
I
CE(L)
Classifications
Class
I
CE(L)
(mA)
Q
0.8 to 2.4
R
1.6 to 4.8
Pl
e
S
3.2 to 9.6
T
6.4 to 19.2
0.4±0.1
Good collector photo current linearity with respect to optical
power input
pl d in
as
an c
e
ed lud
pl
vi
an m m es
si
tf
ed ain ai fo
ol
lo dis dis ten nte llow
ht w c
tp in o co an nan in
:// g nt n ce c g
pa U in tin t e fo
na RL ue ue ype typ ur
so a d t d
e Pr
od
ni bo yp typ
c. u e e
uc
ne t l
d
tl
at
ife
t/s e
cy
c/ st
en in
cl
e
fo
st
rm
ag
at
e.
io
n.
45
˚
(0.7)
2
1
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semiconductors described in this book
(1)
If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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Consult our sales staff in advance for information on the following applications:
–
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–
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