ACT SERIES, POSITIVE EDGE TRIGGERED D FLIP-FLOP, TRUE OUTPUT, CDIP20, CERAMIC, DIP-20
| 参数名称 | 属性值 |
| 包装说明 | DIP, DIP20,.3 |
| Reach Compliance Code | unknow |
| 其他特性 | WITH HOLD MODE |
| 系列 | ACT |
| JESD-30 代码 | R-GDIP-T20 |
| JESD-609代码 | e0 |
| 长度 | 24.51 mm |
| 负载电容（CL） | 50 pF |
| 逻辑集成电路类型 | D FLIP-FLOP |
| 最大频率@ Nom-Su | 85000000 Hz |
| 最大I（ol） | 0.024 A |
| 位数 | 8 |
| 功能数量 | 1 |
| 端子数量 | 20 |
| 最高工作温度 | 125 °C |
| 最低工作温度 | -55 °C |
| 输出极性 | TRUE |
| 封装主体材料 | CERAMIC, GLASS-SEALED |
| 封装代码 | DIP |
| 封装等效代码 | DIP20,.3 |
| 封装形状 | RECTANGULAR |
| 封装形式 | IN-LINE |
| 电源 | 5 V |
| 传播延迟（tpd） | 10 ns |
| 认证状态 | Not Qualified |
| 筛选级别 | MIL-STD-883 |
| 座面最大高度 | 5.08 mm |
| 最大供电电压 (Vsup) | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V |
| 标称供电电压 (Vsup) | 5 V |
| 表面贴装 | NO |
| 技术 | CMOS |
| 温度等级 | MILITARY |
| 端子面层 | TIN LEAD |
| 端子形式 | THROUGH-HOLE |
| 端子节距 | 2.54 mm |
| 端子位置 | DUAL |
| 触发器类型 | POSITIVE EDGE |
| 宽度 | 7.62 mm |
| 最小 fmax | 85 MHz |
| Base Number Matches | 1 |
| 5962-9219001MRA | 5962-9219001MSA | 5962-9219001M2A | 74ACQ377SCX | |
|---|---|---|---|---|
| 描述 | ACT SERIES, POSITIVE EDGE TRIGGERED D FLIP-FLOP, TRUE OUTPUT, CDIP20, CERAMIC, DIP-20 | ACT SERIES, POSITIVE EDGE TRIGGERED D FLIP-FLOP, TRUE OUTPUT, CDFP20, CERPACK-20 | ACT SERIES, POSITIVE EDGE TRIGGERED D FLIP-FLOP, TRUE OUTPUT, CQCC20, CERAMIC, LCC-20 | AC SERIES, POSITIVE EDGE TRIGGERED D FLIP-FLOP, TRUE OUTPUT, PDSO20, 0.300 INCH, PLASTIC, SOIC-20 |
| 包装说明 | DIP, DIP20,.3 | DFP, FL20,.3 | QCCN, LCC20,.35SQ | SOP, |
| Reach Compliance Code | unknow | unknow | unknow | unknown |
| 其他特性 | WITH HOLD MODE | WITH HOLD MODE | WITH HOLD MODE | WITH HOLD MODE |
| 系列 | ACT | ACT | ACT | AC |
| JESD-30 代码 | R-GDIP-T20 | R-GDFP-F20 | S-CQCC-N20 | R-PDSO-G20 |
| 负载电容（CL） | 50 pF | 50 pF | 50 pF | 50 pF |
| 逻辑集成电路类型 | D FLIP-FLOP | D FLIP-FLOP | D FLIP-FLOP | D FLIP-FLOP |
| 位数 | 8 | 8 | 8 | 8 |
| 功能数量 | 1 | 1 | 1 | 1 |
| 端子数量 | 20 | 20 | 20 | 20 |
| 最高工作温度 | 125 °C | 125 °C | 125 °C | 85 °C |
| 最低工作温度 | -55 °C | -55 °C | -55 °C | -40 °C |
| 输出极性 | TRUE | TRUE | TRUE | TRUE |
| 封装主体材料 | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED | CERAMIC, METAL-SEALED COFIRED | PLASTIC/EPOXY |
| 封装代码 | DIP | DFP | QCCN | SOP |
| 封装形状 | RECTANGULAR | RECTANGULAR | SQUARE | RECTANGULAR |
| 封装形式 | IN-LINE | FLATPACK | CHIP CARRIER | SMALL OUTLINE |
| 传播延迟（tpd） | 10 ns | 10 ns | 10 ns | 8 ns |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 座面最大高度 | 5.08 mm | 2.286 mm | 1.905 mm | 2.65 mm |
| 最大供电电压 (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
| 标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V |
| 表面贴装 | NO | YES | YES | YES |
| 技术 | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | MILITARY | MILITARY | MILITARY | INDUSTRIAL |
| 端子形式 | THROUGH-HOLE | FLAT | NO LEAD | GULL WING |
| 端子节距 | 2.54 mm | 1.27 mm | 1.27 mm | 1.27 mm |
| 端子位置 | DUAL | DUAL | QUAD | DUAL |
| 触发器类型 | POSITIVE EDGE | POSITIVE EDGE | POSITIVE EDGE | POSITIVE EDGE |
| 宽度 | 7.62 mm | 6.731 mm | 8.89 mm | 7.5 mm |
| 最小 fmax | 85 MHz | 85 MHz | 85 MHz | 91 MHz |
| Base Number Matches | 1 | 1 | 1 | 1 |
| JESD-609代码 | e0 | e0 | e0 | - |
| 长度 | 24.51 mm | - | 8.89 mm | 12.8 mm |
| 最大频率@ Nom-Su | 85000000 Hz | 85000000 Hz | 85000000 Hz | - |
| 最大I（ol） | 0.024 A | 0.024 A | 0.024 A | - |
| 封装等效代码 | DIP20,.3 | FL20,.3 | LCC20,.35SQ | - |
| 电源 | 5 V | 5 V | 5 V | - |
| 筛选级别 | MIL-STD-883 | MIL-STD-883 | MIL-STD-883 | - |
| 端子面层 | TIN LEAD | TIN LEAD | TIN LEAD | - |
TI技术论坛
TI技术论坛
嵌入式系统
Linux开发
单片机
实时操作系统RTOS
电子工程世界版权所有
京B2-20211791
京ICP备10001474号-1
电信业务审批[2006]字第258号函
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
