BF244A / BF244B / BF244C
BF244A
BF244B
BF244C
S
G
TO-92
D
N-Channel RF Amplifier
This device is designed for RF amplifier and mixer applications
operating up to 450 MHz, and for analog switching requiring low
capacitance. Sourced from Process 50.
Absolute Maximum Ratings*
Symbol
V
DG
V
GS
I
D
I
GF
T
stg
Drain-Gate Voltage
Gate-Source Voltage
Drain Current
Forward Gate Current
Storage Temperature Range
TA = 25°C unless otherwise noted
Parameter
Value
30
- 30
50
10
-55 to +150
Units
V
V
mA
mA
°C
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
θJC
R
θJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max
BF244A / BF244B / BF244C
350
2.8
125
357
Units
mW
mW/°C
°C/W
°C/W
1997
Fairchild Semiconductor Corporation
BF244A / BF244B / BF244C
N-Channel RF Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Typ
Max Units
OFF CHARACTERISTICS
V
(BR)GSS
I
GSS
V
GSS(off)
V
GS
Gate-Source Breakdown Voltage
Gate Reverse Current
Gate-Source Cutoff Voltage
Gate-Source Voltage
I
G
= 1.0
µA,
V
DS
= 0
V
GS
= - 20 V, V
DS
= 0
V
DS
= 15 V, I
D
= 10 nA
V
DS
= 15 V, I
D
= 200
µA
244A
244B
244C
30
5.0
- 0.5
- 0.4
- 1.6
- 3.2
- 8.0
- 2.2
- 3.8
- 7.5
V
nA
V
V
V
V
ON CHARACTERISTICS
I
DSS
Zero-Gate Voltage Drain Current
V
DS
= 15 V, V
GS
= 0
244A
244B
244C
2.0
6.0
12
6.5
15
25
mA
mA
mA
SMALL SIGNAL CHARACTERISTICS
y
fs
y
os
y
rs
C
iss
C
rss
C
oss
NF
F(Y
fs
)
Forward Transfer Admittance
Output Admittance
Reverse Transfer Admittance
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Noise Figure
Cut-Off Frequency
V
DS
= 15 V, V
GS
= 0, f = 1.0 kHz
V
DS
= 15 V, V
GS
= 0, f = 200 MHz
V
DS
= 15 V, V
GS
= 0, f = 1.0 kHz
V
DS
= 15 V, V
GS
= 0, f = 200 MHz
V
DS
= 20 V, V
GS
= - 1.0 V
V
DS
= 20 V, V
GS
= - 1.0 V,
f = 1.0 MHz
V
DS
= 20 V, V
GS
= - 1.0 V,
f = 1.0 MHz
V
DS
= 15 V, V
GS
= 0, R
G
= 1.0 kΩ,
f = 100 MHz
V
DS
= 15 V, V
GS
= 0
3.0
5.6
40
1.0
3.0
0.7
0.9
1.5
700
6.5
mmhos
mmhos
µmhos
µmhos
pF
pF
pF
dB
MHz
5
Typical Characteristics
Transfer Characteristics
20
I
D
- DRAIN CURRENT (mA)
r
DS
- DRAIN ON RESISTANCE (
Ω
)
Channel Resistance vs Temperature
1000
500
300
200
100
V
GS(OFF)
= -4.5V
T
A
= -55 C
T
A
= +25 C
O
O
V
DS
= 15V
16
V
GS(OFF)
= -1.0V
-2.5 V
-5.0V
-8.0 V
12
T
A
= +125
O
C
T
A
= -55 C
T
A
= +25 C
T
A
= +125
O
C
O
O
8
50
30
20
10
4
V
DS
= 100mV
-2.5 V
0
0
-1
-2
-3
-4
V
GS
- GATE-SOURCE VOLTAGE(V)
-5
V
GS
= 0 V
-50
0
50
100
150
T
A
- AMBIENT TEMPERATURE ( C)
BF244A / BF244B / BF244C
N-Channel RF Amplifier
(continued)
Typical Characteristics
(continued)
gfs -- TRANSCONDUCTANCE (mmhos)
Transconductance
Characteristics
7
6
5
4
3
2
1
0
0
Common Drain-Source
Characteristics
I
D
-- DRAIN CURRENT (mA)
DS
T
A
= -55 C
T
A
= +25 C
T
A
= +125
O
C
O
O
V
= 15V
5
4
3
T
A
= +25 C
TYP V
GS(OFF)
O
= -5.0V
=
0V
T
A
= -55 C
T
A
= +25 C
T
A
= +125
O
C
V
GS(OFF)
= -4.5V
O
O
5V
-0.
-1.0V
V
-1.5
-2.0V
V
2
1
G
S
-2.5V
-3.0V
-3.5V
-4.0V
-2.5 V
-1
-2
-3
-4
V
GS
GATE-SOURCE VOLTAGE(V)
-
-5
0
0
0.2
0.4
0.6
0.8
V
DS
- DRAIN-SOURCE VOLTAGE(V)
1
gos -- OUTPUT CONDUCTANCE (u mhos)
T
A
= +25 C
f = 1.0 kHz
20
10
5
V
DG
O
V
= -5.5V
G S(OFF)
5.0V
10V
15V
20V
gfs, I
DSS
@ V
DS
= 15 V, V
GS
= 0 PULSE
r
DS
@ V
DS
= 100mV, V
GS
= 0
100
50
30
20
10
5
= 5v
10
20
15
5
10
15
20
V
G S(OFF)
1
0.5
V
0.1
0.01 0.02
= -3.5V
= -1.5V
G S(OFF)
0.05 0.1 0.2
0.5
1
2
I
D
-- DRAIN CURRENT (mA)
5
10
20
10
-
1
V
GS(OFF)
@ V
GS
= 15V, I
D
= 1nA
3
2
1
-
10
-
2
-
3
-
5
-
7
V - GATE-SOURCE VOLTAGE(V)
GS
Transconductance vs
Drain Current
gfs -- TRANSCONDUCTANCE (mmhos)
10
e
n
- NOISE VOLTAGE ( nV/
Noise Voltage vs Frequency
V
DG
= 15V
BW = 6.0 Hz @ f = 10 Hz, 100 Hz
= 0.2 f @ f > 1.0 kHz
Hz )
V
GS(OFF)
= - 1.5V
O
T
A
= -55 C
5
T
A
= +25 C
T
A
= +125 C
1
O
O
T
A
= -55 C
V
GS(OFF)
T
A
= +25 C
T
A
= +125
O
C
= - 5V
V
DG
= 15V
f = 1.0 kHz
O
O
0.5
10
5
I
D
= 0.5 mA
I
D
= 3 mA
0.1
0.01 0.02
0.05 0.1 0.2
0.5
1
2
I
D
- DRAIN CURRENT (mA)
5
10
1
0.01 0.03
0.1
0.3
1
3
10
f -- FREQUENCY (kHz)
30
100
gfs --- TRANSCONDUCTANCE ( mmhos )
I
-- DRAIN CURRENT ( mA )
DSS
Output Conductance vs
Drain Current
r
DS
-- DRAIN "ON" RESISTANCE (
Ω
)
Transconductance
Parameter Interactions
BF244A / BF244B / BF244C
N-Channel RF Amplifier
(continued)
Typical Characteristics
(continued)
Capacitance vs Voltage
10
) -- CAPACITANCE (pF)
f = 0.1 - 1.0 MHz
Noise Figure Frequency
5
V
DS
NF -- NOISE FIGURE (dB)
4
I
D
= 15V
= 5.0 mA
5
C
is
( V
DS
= 15 V)
1
C
rs
( V
DS
= 0 V)
3
R
g
= 1.0 k
Ω
O
T
A
= +25 C
2
C
is
( C
rs
1
0
-5
-10
-15
V
G S
-- GATE-SOURCE VOLTAGE(V)
-20
0
10
20
30
50
100
200 300
f -- FREQUENCY (MHz)
500
1000
Common Gate Characteristics
Output Admittance
Y
ogs
-- OUTPUT CONDUCTANCE (mmhos)
Input Admittance
Y -- INPUT ADMITTANCE (mmhos)
igs
V
DS
= 15V
V
GS
= 0
(CG)
1
b
Og S
(x 10)
g
Ogs
10
5
g
igs
V
DS
= 15V
V
GS
= 0
(CG)
100
200
300
500
f -- FREQUENCY (MHz)
700
1000
b
igs
5
700
1000
1
100
200
300
500
f -- FREQUENCY (MHz)
Forward Transadmittance
Y
fgs
-- FORWARD TRANSFER (mmhos)
Reverse Transadmittance
Y
rgs
-- REVERSE TRANSFER (mmhos)
1
10
5
+g
fgs
V
DS
= 15V
V
GS
= 0
(CG)
g
rgs
-b
fgs
1
- b
rgs
V
DS
= 15V
V
GS
= 0
(CG)
100
200
300
500
f -- FREQUENCY (MHz )
700
1000
100
200
300
500
f -- FREQUENCY (MHz)
700
1000
BF244A / BF244B / BF244C
N-Channel RF Amplifier
(continued)
Common Source Characteristics
Output Admittance
-- OUTPUT CONDUCTANCE (mmhos)
Input Admittance
Y
is s
-- INPUT ADMITTANCE (mmhos)
10
5
1
V
DS
= 15V
V
GS
= 0
(CS)
b
OSS
(x 10)
g
OSS
1
b
iss
g
iss
V
DS
= 15V
V
GS
= 0
(CS)
100
200
300
500
f -- FREQUENCY (MHz)
700
1000
Y
OSS
100
200
300
500
f -- FREQUENCY (MHz)
700
1000
Forward Transadmittance
Y
fss
-- FORWARD TRANSFER (mmhos)
5
Y
rss
-- REVERSE TRANSFER (mmhos)
Reverse Transadmittance
10
5
10
+g
fss
-b
1
fss
- b
rss
1
-g
V
DS
= 15V
V
GS
= 0
(CS)
100
rss
( X 0.1)
V
DS
= 15V
V
GS
= 0
(CS)
100
200
300
500
f -- FREQUENCY (MHz)
700
1000
200
300
500
f -- FREQUENCY (MHz)
700
1000
聊聊、笑笑、闹闹
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
