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HYE25L128800AC-7.5: 产品描述Synchronous DRAM, 16MX8, 5.4ns, CMOS, PBGA54, 9 X 8 MM, FBGA-54; 产品类别存储存储; 文件大小401KB，共51页; 制造商Infineon(英飞凌); 官网地址http://www.infineon.com/

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HYE25L128800AC-7.5概述

Synchronous DRAM, 16MX8, 5.4ns, CMOS, PBGA54, 9 X 8 MM, FBGA-54

HYE25L128800AC-7.5规格参数

参数名称	属性值
是否Rohs认证	不符合
厂商名称	Infineon(英飞凌)
零件包装代码	BGA
包装说明	FBGA,
针数	54
Reach Compliance Code	compliant
ECCN代码	EAR99
访问模式	FOUR BANK PAGE BURST
最长访问时间	5.4 ns
其他特性	AUTO/SELF REFRESH
JESD-30 代码	R-PBGA-B54
长度	9 mm
内存密度	134217728 bit
内存集成电路类型	SYNCHRONOUS DRAM
内存宽度	8
功能数量	1
端口数量	1
端子数量	54
字数	16777216 words
字数代码	16000000
工作模式	SYNCHRONOUS
最高工作温度	85 °C
最低工作温度	-25 °C
组织	16MX8
封装主体材料	PLASTIC/EPOXY
封装代码	FBGA
封装形状	RECTANGULAR
封装形式	GRID ARRAY, FINE PITCH
峰值回流温度（摄氏度）	NOT SPECIFIED
认证状态	Not Qualified
自我刷新	YES
最大供电电压 (Vsup)	2.7 V
最小供电电压 (Vsup)	2.3 V
标称供电电压 (Vsup)	2.5 V
表面贴装	YES
技术	CMOS
温度等级	OTHER
端子形式	BALL
端子节距	0.8 mm
端子位置	BOTTOM
处于峰值回流温度下的最长时间	NOT SPECIFIED
宽度	8 mm

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HYB/E 25L128800/160AC

128-MBit Mobile RAM

128-MBit Synchronous Low-Power DRAM in Chipsize Packages

Preliminary Datasheet (Rev. 04/01)

High Performance:

• Automatic and Controlled Precharge

Command

-8

125

Units

MHz

• Programmable Burst Length: 1, 2, 4, 8 and

full page

• Programmable Power Reduction Feature by

partial array activation during Self-Refresh

• Data Mask for byte control

• Auto Refresh (CBR)

• Self Refresh with programmble refresh period

• Power Down and Clock Suspend Mode

• Random Column Address every CLK

(1-N Rule)

• 54-FBGA , with 9 x 6 ball array with 3

depopulated rows, 9 x 8 mm

• Operating Temperature Range

Commerical ( 0

to 70

Extended ( -25

C to +85

-7.5

CK,MAX

CK3,MIN

AC3,MAX

CK2,MIN

AC2,MAX

133

7.5

5.4

• 8Mbit x 16 & 16Mbit x8 organisation

• VDD = 2.5V / VDDQ = 1.8V (2.5V tolerant)

• Fully Synchronous to Positive Clock Edge

• Four Banks controlled by BA0 & BA1

• Programmable CAS Latency: 2, 3

• Programmable Wrap Sequence: Sequential

or Interleave

• Deep Power Down Mode

The HYB/E 25L128800/160AC Mobile RAMs are new generation of low power, four bank

Synchronous DRAM’s organized as 4 banks

2Mbit x16 and 4 banks x 4Mbit x 8 with additional

features for mobile applications. These synchronous Mobile RAMs achieve high speed data

transfer rates by employing a chip architecture that prefetches multiple bits and then synchronizes

the output data to a system clock. The chip is fabricated using the Infineon advanced process

technology.

The device adds new features to the industry standards set for synchronous DRAM products.

Only partials of the memory array can be selected for Self-Refresh and the refresh period during

Self-Refresh is programmable in 4 steps which drastically reduces the self refresh current,

depending on the case temperature of the components in the system application. In addition a

“Deep Power Down Mode” is available. Operating the four memory banks in an interleave fashion

allows random access operation to occur at higher rate. A sequential and gapless data rate is

possible depending on burst length, CAS latency and speed grade of the device. The device

operates from a 2.5V power supply for the core and 1.8V for the bus interface. The Mobile RAM is

housed in a FBGA “chip-size” package. The Mobile RAM is available in the commercial (0

to 70

and Extended ( -25

C to +85

C) temperature range

INFINEON Technologies

4.01

HYE25L128800AC-7.5相似产品对比

	HYE25L128800AC-7.5	HYB25L128800AC-8	HYB25L128800AC-7.5	HYE25L128800AC-8
描述	Synchronous DRAM, 16MX8, 5.4ns, CMOS, PBGA54, 9 X 8 MM, FBGA-54	Synchronous DRAM, 16MX8, 6ns, CMOS, PBGA54, 9 X 8 MM, FBGA-54	Synchronous DRAM, 16MX8, 5.4ns, CMOS, PBGA54, 9 X 8 MM, FBGA-54	Synchronous DRAM, 16MX8, 6ns, CMOS, PBGA54, 9 X 8 MM, FBGA-54
是否Rohs认证	不符合	不符合	不符合	不符合
厂商名称	Infineon(英飞凌)	Infineon(英飞凌)	Infineon(英飞凌)	Infineon(英飞凌)
零件包装代码	BGA	BGA	BGA	BGA
包装说明	FBGA,	FBGA,	FBGA,	FBGA,
针数	54	54	54	54
Reach Compliance Code	compliant	compliant	compliant	compliant
ECCN代码	EAR99	EAR99	EAR99	EAR99
访问模式	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST
最长访问时间	5.4 ns	6 ns	5.4 ns	6 ns
其他特性	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH
JESD-30 代码	R-PBGA-B54	R-PBGA-B54	R-PBGA-B54	R-PBGA-B54
长度	9 mm	9 mm	9 mm	9 mm
内存密度	134217728 bit	134217728 bit	134217728 bit	134217728 bit
内存集成电路类型	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM
内存宽度	8	8	8	8
功能数量	1	1	1	1
端口数量	1	1	1	1
端子数量	54	54	54	54
字数	16777216 words	16777216 words	16777216 words	16777216 words
字数代码	16000000	16000000	16000000	16000000
工作模式	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
最高工作温度	85 °C	70 °C	70 °C	85 °C
组织	16MX8	16MX8	16MX8	16MX8
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	FBGA	FBGA	FBGA	FBGA
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	GRID ARRAY, FINE PITCH	GRID ARRAY, FINE PITCH	GRID ARRAY, FINE PITCH	GRID ARRAY, FINE PITCH
峰值回流温度（摄氏度）	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified
自我刷新	YES	YES	YES	YES
最大供电电压 (Vsup)	2.7 V	2.7 V	2.7 V	2.7 V
最小供电电压 (Vsup)	2.3 V	2.3 V	2.3 V	2.3 V
标称供电电压 (Vsup)	2.5 V	2.5 V	2.5 V	2.5 V
表面贴装	YES	YES	YES	YES
技术	CMOS	CMOS	CMOS	CMOS
温度等级	OTHER	COMMERCIAL	COMMERCIAL	OTHER
端子形式	BALL	BALL	BALL	BALL
端子节距	0.8 mm	0.8 mm	0.8 mm	0.8 mm
端子位置	BOTTOM	BOTTOM	BOTTOM	BOTTOM
处于峰值回流温度下的最长时间	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
宽度	8 mm	8 mm	8 mm	8 mm

HYE25L128800AC-7.5

HYE25L128800AC-7.5概述

HYE25L128800AC-7.5规格参数

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