NOR Gate, HC/UH Series, 3-Func, 3-Input, CMOS, CDIP14
| 参数名称 | 属性值 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | Harris |
| 包装说明 | DIP, DIP14,.3 |
| Reach Compliance Code | unknown |
| 其他特性 | RADIATION HARD CMOS/SILICON ON SAPPHIRE (SOS) TECHONOLOGY |
| 系列 | HC/UH |
| JESD-30 代码 | R-CDIP-T14 |
| JESD-609代码 | e0 |
| 负载电容（CL） | 50 pF |
| 逻辑集成电路类型 | NOR GATE |
| 最大I（ol） | 0.004 A |
| 功能数量 | 3 |
| 输入次数 | 3 |
| 端子数量 | 14 |
| 最高工作温度 | 125 °C |
| 最低工作温度 | -55 °C |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED |
| 封装代码 | DIP |
| 封装等效代码 | DIP14,.3 |
| 封装形状 | RECTANGULAR |
| 封装形式 | IN-LINE |
| 电源 | 5 V |
| Prop。Delay @ Nom-Sup | 22 ns |
| 传播延迟（tpd） | 20 ns |
| 认证状态 | Not Qualified |
| 施密特触发器 | NO |
| 筛选级别 | 38535V;38534K;883S |
| 最大供电电压 (Vsup) | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V |
| 标称供电电压 (Vsup) | 5 V |
| 表面贴装 | NO |
| 技术 | CMOS |
| 温度等级 | MILITARY |
| 端子面层 | Tin/Lead (Sn/Pb) |
| 端子形式 | THROUGH-HOLE |
| 端子节距 | 2.54 mm |
| 端子位置 | DUAL |
| 总剂量 | 200k Rad(Si) V |
| HCS27DMSR | 5962R9578001VCC | 5962R9578001VXC | HCS27HMSR | HCS27D/SAMPLE | HCS27KMSR | |
|---|---|---|---|---|---|---|
| 描述 | NOR Gate, HC/UH Series, 3-Func, 3-Input, CMOS, CDIP14 | NOR Gate, HC/UH Series, 3-Func, 3-Input, CMOS, CDIP14 | NOR Gate, HC/UH Series, 3-Func, 3-Input, CMOS, CDFP14 | NOR Gate, HC/UH Series, 3-Func, 3-Input, CMOS | NOR Gate, HC/UH Series, 3-Func, 3-Input, CMOS, CDIP14 | NOR Gate, HC/UH Series, 3-Func, 3-Input, CMOS, CDFP14 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown |
| 系列 | HC/UH | HC/UH | HC/UH | HC/UH | HC/UH | HC/UH |
| JESD-30 代码 | R-CDIP-T14 | R-CDIP-T14 | R-CDFP-F14 | X-XUUC-N14 | R-CDIP-T14 | R-CDFP-F14 |
| 负载电容（CL） | 50 pF | 50 pF | 50 pF | 50 pF | 50 pF | 50 pF |
| 逻辑集成电路类型 | NOR GATE | NOR GATE | NOR GATE | NOR GATE | NOR GATE | NOR GATE |
| 功能数量 | 3 | 3 | 3 | 3 | 3 | 3 |
| 输入次数 | 3 | 3 | 3 | 3 | 3 | 3 |
| 端子数量 | 14 | 14 | 14 | 14 | 14 | 14 |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | UNSPECIFIED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | UNSPECIFIED | RECTANGULAR | RECTANGULAR |
| 封装形式 | IN-LINE | IN-LINE | FLATPACK | UNCASED CHIP | IN-LINE | FLATPACK |
| 传播延迟（tpd） | 20 ns | 20 ns | 20 ns | 20 ns | 20 ns | 20 ns |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 最大供电电压 (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
| 标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 表面贴装 | NO | NO | YES | YES | NO | YES |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| 端子形式 | THROUGH-HOLE | THROUGH-HOLE | FLAT | NO LEAD | THROUGH-HOLE | FLAT |
| 端子位置 | DUAL | DUAL | DUAL | UPPER | DUAL | DUAL |
| 厂商名称 | Harris | - | - | Harris | Harris | Harris |
| JESD-609代码 | e0 | e4 | e4 | - | - | e0 |
| 最高工作温度 | 125 °C | 125 °C | 125 °C | 125 °C | - | 125 °C |
| 最低工作温度 | -55 °C | -55 °C | -55 °C | -55 °C | - | -55 °C |
| 温度等级 | MILITARY | MILITARY | MILITARY | MILITARY | - | MILITARY |
| 端子面层 | Tin/Lead (Sn/Pb) | GOLD | GOLD | - | - | Tin/Lead (Sn/Pb) |
| 总剂量 | 200k Rad(Si) V | 100k Rad(Si) V | 100k Rad(Si) V | - | - | 200k Rad(Si) V |
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