HCTS161AMS
September 1995
Radiation Hardened
Synchronous Counter
Pinouts
16 LEAD CERAMIC DUAL-IN-LINE
METAL SEAL PACKAGE (SBDIP)
MIL-STD-1835 CDIP2-T16, LEAD FINISH C
TOP VIEW
MR
CP
P0
P1
P2
P3
PE
GND
1
2
3
4
5
6
7
8
16 VCC
15 TC
14 Q0
13 Q1
12 Q2
11 Q3
10 TE
9 SPE
Features
• 3 Micron Radiation Hardened CMOS SOS
• Total Dose 200K RAD (Si)
• Minimum LET for SEU Upsets: >100 MEV-cm
2
/mg
• Single Event Upset (SEU) Immunity < 2 x 10
-9
Errors/Bit-
Day (Typ)
• Dose Rate Survivability: >1 x 10
12
RAD (Si)/s
• Dose Rate Upset >10
10
RAD (Si)/s 20ns Pulse
• Latch-Up Free Under Any Conditions
• Military Temperature Range: -55 C to +125 C
• Significant Power Reduction Compared to LSTTL ICs
• DC Operating Voltage Range: 4.5V to 5.5V
• Input Logic Levels
-VIL = 0.8V Max
-VIH = VCC/2V Min
• Input Current Levels Ii
≤
5µA at VOL, VOH
o
o
Description
The Intersil HCTS161AMS high-reliability high-speed presettable
four-bit binary synchronous counter features asynchronous reset
and look-ahead carry logic. The HCTS161AMS has an active-low
master reset to zero, MR. A low level at the synchronous parallel
enable, SPE, disables counting and allows data at the preset
inputs (P0 - P3) to load the counter. The data is latched to the
outputs on the positive edge of the clock input, CP. The
HCTS161AMS has two count enable pins, PE and TE. TE also
controls the terminal count output, TC. The terminal count output
indicates a maximum count for one clock pulse and is used to
enable the next cascaded stage to count.
The HCTS161AMS utilizes advanced CMOS/SOS technology to
achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family.
The HCTS161AMS is supplied in a 16 lead Ceramic flatpack
(K suffix) or a SBDIP Package (D suffix).
16 LEAD CERAMIC METAL SEAL
FLATPACK PACKAGE (FLATPACK)
MIL-STD-1835 CDFP4-F16, LEAD FINISH C
TOP VIEW
MR
CP
P0
P1
P2
P3
PE
GND
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
VCC
TC
Q0
Q1
Q2
Q3
TE
SPE
Ordering Information
PART NUMBER
HCTS161ADMSR
HCTS161AKMSR
HCTS161AD/Sample
HCTS161AK/Sample
HCTS161AHMSR
TEMPERATURE RANGE
-55
o
C to +125
o
C
-55
o
C to +125
o
C
+25
o
C
+25
o
C
+25
o
C
SCREENING LEVEL
Intersil Class S Equivalent
Intersil Class S Equivalent
Sample
Sample
Die
PACKAGE
16 Lead SBDIP
16 Lead Ceramic Flatpack
16 Lead SBDIP
16 Lead Ceramic Flatpack
Die
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
Spec Number
File Number
1
518888
2144.2
Specifications HCTS161AMS
Absolute Maximum Ratings
Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . . . -0.5 to +7.0V
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V
DC Input Current, Any One Input
. . . . . . . . . . . . . . . . . . . . . . . .±10mA
DC Drain Current, Any One Output.
. . . . . . . . . . . . . . . . . . . . . .±25mA
(All Voltage Reference to the VSS Terminal)
Storage Temperature Range (TSTG) . . . . . . . . . . . -65
o
C to +150
o
C
Lead Temperature (Soldering 10sec) . . . . . . . . . . . . . . . . . . +265
o
C
Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175
o
C
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Reliability Information
Thermal Resistance
θ
JA
θ
JC
o
C/W
SBDIP Package. . . . . . . . . . . . . . . . . . . .
73
24
o
C/W
Ceramic Flatpack Package . . . . . . . . . . . 114
o
C/W
29
o
C/W
o
C Ambient
Maximum Package Power Dissipation at +125
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.68W
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.44W
If device power exceeds package dissipation capability, provide heat
sinking or derate linearly at the following rate:
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.7mW/
o
C
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . 8.8mW/
o
C
CAUTION: As with all semiconductors, stress listed under “Absolute Maximum Ratings” may be applied to devices (one at a time) without resulting in permanent
damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed
under “Electrical Performance Characteristics” are the only conditions recommended for satisfactory device operation..
Operating Conditions
Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Input Rise and Fall Times at VCC = 4.5V (TR, TF) . . . . .100ns Max
Operating Temperature Range (T
A
) . . . . . . . . . . . . -55
o
C to +125
o
C
Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . . . . . . . 0.0V to 0.8V
Input High Voltage (VIH) . . . . . . . . . . . . . . . . . . . . . . .VCC/2 to VCC
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
GROUP
A SUB-
GROUPS
1
2, 3
Output Current
(Sink)
IOL
VCC = 4.5V, VIH = 4.5V,
VOUT = 0.4V, VIL = 0V ,
(Note 2)
VCC = 4.5V, VIH = 4.5V,
VOUT = VCC -0.4V,
VIL = 0V, (Note 2)
VCC = 4.5V, VIH = 2.25V,
IOL = 50µA, VIL = 0.8V
VCC = 5.5V, VIH = 2.75V,
IOL = 50µA, VIL = 0.8V
Output Voltage High
VOH
VCC = 4.5V, VIH = 2.25V,
IOH = -50µA, VIL = 0.8V
VCC = 5.5V, VIH = 2.75V,
IOH = -50µA, VIL = 0.8V
Input Leakage
Current
IIN
VCC = 5.5V, VIN = VCC or
GND
1
2, 3
1
2, 3
1, 2, 3
LIMITS
TEMPERATURE
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C, +125
o
C, -55
o
C
MIN
-
-
4.8
4.0
-4.8
-4.0
-
MAX
40
750
-
-
-
-
0.1
UNITS
µA
µA
mA
mA
mA
mA
V
PARAMETER
Supply Current
SYMBOL
ICC
(NOTE 1)
CONDITIONS
VCC = 5.5V,
VIN = VCC or GND
Output Current
(Source)
IOH
Output Voltage Low
VOL
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
-
0.1
V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
VCC
-0.1
VCC
-0.1
-
-
-
-
V
1, 2, 3
+25
o
C, +125
o
C, -55
o
C
-
V
1
2, 3
+25
o
C
+125
o
C, -55
o
C
+25
o
C, +125
o
C, -55
o
C
±0.5
±5.0
-
µA
µA
V
Noise Immunity
Functional Test
NOTES:
FN
VCC = 4.5V, VIH = 2.25V,
VIL = 0.8V, (Note 3)
7, 8A, 8B
1. All voltages reference to device GND.
2. Force/measure functions may be interchanged.
3. For functional tests VO
≥
4.0V is recognized as a logic “1”, and VO
≤
0.5V is recognized as a logic “0”.
Spec Number
2
518888
Specifications HCTS161AMS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
GROUP
A SUB-
GROUPS
9
10, 11
9
10, 11
9
10, 11
9
10, 11
9
10, 11
9
10, 11
9
10, 11
9
10, 11
LIMITS
TEMPERATURE
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
MIN
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
MAX
27
29
27
29
28
31
29
33
20
21
25
29
38
45
44
51
ns
ns
ns
ns
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
PARAMETER
Propagation Delay
CP to Qn
SYMBOL
TPLH1
(NOTES 1, 2)
CONDITIONS
VCC = 4.5V, VIH = 3.0V,
VIL = 0V
VCC = 4.5V, VIH = 3.0V,
VIL = 0V
VCC = 4.5V, VIH = 3.0V,
VIL = 0V
VCC = 4.5V, VIH = 3.0V,
VIL = 0V
VCC = 4.5V, VIH = 3.0V,
VIL = 0V
VCC = 4.5V, VIH = 3.0V,
VIL = 0V
VCC = 4.5V, VIH = 3.0V,
VIL = 0V
VCC = 4.5V, VIH = 3.0V,
VIL = 0V
TPHL1
Propagation Delay
CP to TC
TPLH2
TPHL2
Propagation Delay
TE to TC
TPLH3
TPHL3
Propagation Delay
MR to Q
Propagation Delay
MR to TC
NOTES:
TPHL4
TPHL5
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500Ω, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = VCC.
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
(NOTE 1)
CONDITIONS
VCC = 5.0V, VIH = 5.0,
VIL = 0.0V, f = 1MHz
VCC = 5.0V, VIH = 5.0,
VIL = 0.0V, f = 1MHz
VCC = 4.5V, VIH = 4.5,
VIL = 0.0V,
VCC = 4.5V, VIH = 4.5,
VIL = 0.0V,
VCC = 4.5V, VIH = 4.5,
VIL = 0.0V,
VCC = 4.5V, VIH = 4.5,
VIL = 0.0V,
VCC = 4.5V, VIH = 4.5,
VIL = 0.0V,
VCC = 4.5V, VIH = 4.5,
VIL = 0.0V,
LIMITS
TEMPERATURE
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
MIN
-
-
-
-
16
24
20
30
10
15
13
20
12
18
5
5
MAX
231
285
10
10
-
-
-
-
-
-
-
-
-
-
-
-
UNITS
pF
pF
pF
pF
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
PARAMETER
Capacitance Power
Dissipation
Input Capacitance
SYMBOL
CPD
CIN
Pulse Width Time CP
TW
Pulse Width Time MR
TW
Setup Time Pn to CP
TSU
Setup Time PE to CP or TE
TSU
Setup Time SPE to CP
TSU
Hold Time Pn to CP
TSU
Spec Number
3
518888
Specifications HCTS161AMS
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
(NOTE 1)
CONDITIONS
VCC = 4.5V, VIH = 4.5,
VIL = 0.0V,
VCC = 4.5V, VIH = 4.5,
VIL = 0.0V,
VCC = 4.5V, VIH = 4.5,
VIL = 0.0V,
VCC = 4.5V, VIH = 4.5,
VIL = 0.0V,
LIMITS
TEMPERATURE
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
MIN
3
3
3
3
15
22
0
0
MAX
-
-
-
-
-
-
30
20
UNITS
ns
ns
ns
ns
ns
ns
MHz
MHz
PARAMETER
Hold Time TE or PE to CP
SYMBOL
TSU
Hold Time SPE to CP
TSU
Recovery Time
TREC
Maximum Frequency
FMAX
NOTE:
1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly
tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics.
TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
200K RAD
LIMITS
TEMPERATURE
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
MIN
-
4.0
-4.0
-
-
VCC
-0.1
VCC
-0.1
-
-
2
2
2
2
2
2
2
2
MAX
0.75
-
-
0.1
0.1
-
UNITS
mA
mA
mA
V
V
V
PARAMETER
Supply Current
Output Current (Sink)
Output Current (Source)
Output Voltage Low
SYMBOL
ICC
IOL
IOH
VOL
(NOTES 1, 2)
CONDITIONS
VCC = 5.5V, VIN = VCC or GND
VCC = 4.5V, VIH = 4.5, VIL = 0V,
VOUT = 0.4V
VCC = 4.5V, VIH = 4.5, VIL = 0V,
VOUT = VCC -0.4V
VCC = 4.5V, VIH = 2.25V, VIL = 0.8V ,
IOL = 50µA
VCC = 5.5V, VIH = 2.75V, VIL = 0.8V ,
IOL = 50µA
Output Voltage High
VOH
VCC = 4.5V, VIH = 2.25V,
VIL = 0.8V, IOH = -50µA
VCC = 5.5V, VIH = 2.75V,
VIL = 0.8V, IOH = -50µA
-
±5
-
29
29
33
31
29
21
45
51
V
µA
V
ns
ns
ns
ns
ns
ns
ns
ns
Input Leakage Current
Noise Immunity
Functional Test
Propagation Delay
CP to Qn
Propagation Delay
CP to TC
Propagation Delay
TE to TC
Propagation Delay
MR to Q
Propagation Delay
MR to TC
NOTES:
IIN
FN
TPHL1
TPLH1
TPHL2
TPLH2
TPHL3
TPLH3
TPHL4
TPHL5
VCC = 5.5V, VIN = VCC or GND
VCC = 4.5V, VIH = 2.25V, VIL = 0.8V ,
(Note 2)
VCC = 4.5V, VIH = 3.0V, VIL = 0V
VCC = 4.5V, VIH = 3.0V, VIL = 0V
VCC = 4.5V, VIH = 3.0V, VIL = 0V
VCC = 4.5V, VIH = 3.0V, VIL = 0V
VCC = 4.5V, VIH = 3.0V, VIL = 0V
VCC = 4.5V, VIH = 3.0V, VIL = 0V
VCC = 4.5V, VIH = 3.0V, VIL = 0V
VCC = 4.5V, VIH = 3.0V, VIL = 0V
1. All voltages referenced to device GND.
2. For functional tests VO
≥
4.0V is recognized as a logic “1”, and VO
≤
0.5V is recognized as a logic “0”.
Spec Number
4
518888
Specifications HCTS161AMS
TABLE 5. BURN-IN AND OPERATING LIFE TEST, DELTA PARAMETERS (+25
o
C)
GROUP B
SUBGROUP
5
5
PARAMETER
ICC
IOL/IOH
DELTA LIMIT
12µA
-15% of 0 Hour
TABLE 6. APPLICABLE SUBGROUPS
CONFORMANCE GROUPS
Initial Test (Preburn-In)
Interim Test
I
(Postburn-In)
Interim Test
II
(Postburn-In)
PDA
Interim Test
III
(Postburn-In)
PDA
Final Test
Group A (Note 1)
Group B
Subgroup B-5
Subgroup B-6
Group D
NOTE:
1. Alternate group A testing in accordance with method 5005 of MIL-STD-883 may be exercised.
METHOD
100%/5004
100%/5004
100%/5004
100%/5004
100%/5004
100%/5004
100%/5004
Sample/5005
Sample/5005
Sample/5005
Sample/5005
GROUP A SUBGROUPS
1, 7, 9
1, 7, 9
1, 7, 9
1, 7, 9, Deltas
1, 7, 9
1, 7, 9, Deltas
2, 3, 8A, 8B, 10, 11
1, 2, 3, 7, 8A, 8B, 9, 10, 11
1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas
1, 7, 9
1, 7, 9
Subgroups 1, 2, 3, 9, 10, 11
ICC, IOL/H
READ AND RECORD
ICC, IOL/H
ICC, IOL/H
ICC, IOL/H
TABLE 7. TOTAL DOSE IRRADIATION
TEST
CONFORMANCE
GROUPS
Group E Subgroup 2
NOTE:
1. Except FN test which will be performed 100% Go/No-Go.
METHOD
5005
PRE RAD
1, 7, 9
POST RAD
Table 4
READ AND RECORD
PRE RAD
1, 9
POST RAD
Table 4 (Note 1)
Spec Number
5
518888
嵌入式系统
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