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SF11-TB-LF

产品描述Rectifier Diode, 1 Element, 1A, 50V V(RRM), Silicon, DO-41, ROHS COMPLIANT, PLASTIC PACKAGE-2
产品类别分立半导体    二极管   
文件大小50KB,共4页
制造商Won-Top Electronics Co., Ltd.
官网地址https://www.wontop.com/
标准  
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SF11-TB-LF概述

Rectifier Diode, 1 Element, 1A, 50V V(RRM), Silicon, DO-41, ROHS COMPLIANT, PLASTIC PACKAGE-2

SF11-TB-LF规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
厂商名称Won-Top Electronics Co., Ltd.
零件包装代码DO-41
包装说明O-PALF-W2
针数2
Reach Compliance Codecompliant
ECCN代码EAR99
其他特性HIGH RELIABILITY
外壳连接ISOLATED
配置SINGLE
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
JEDEC-95代码DO-41
JESD-30 代码O-PALF-W2
湿度敏感等级2
元件数量1
端子数量2
最高工作温度125 °C
最低工作温度-65 °C
最大输出电流1 A
封装主体材料PLASTIC/EPOXY
封装形状ROUND
封装形式LONG FORM
峰值回流温度(摄氏度)260
最大重复峰值反向电压50 V
最大反向恢复时间0.035 µs
表面贴装NO
端子形式WIRE
端子位置AXIAL
处于峰值回流温度下的最长时间NOT SPECIFIED

文档预览

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WTE
POWER SEMICONDUCTORS
SF11 – SF17
Pb
1.0A SUPERFAST DIODE
Features
!
!
!
!
!
Diffused Junction
Low Forward Voltage Drop
High Current Capability
High Reliability
High Surge Current Capability
A
B
A
Mechanical Data
!
!
!
!
!
!
!
Case: DO-41, Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Weight: 0.34 grams (approx.)
Mounting Position: Any
Marking: Type Number
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
D
DO-41
Dim
Min
Max
25.4
A
4.06
5.21
B
0.71
0.864
C
2.00
2.72
D
All Dimensions in mm
C
Maximum Ratings and Electrical Characteristics
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
(Note 1)
@T
A
= 55°C
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
SF11
50
35
@T
A
=25°C unless otherwise specified
SF12
100
70
SF13
150
105
SF14
200
140
1.0
SF15
300
210
SF16
400
280
SF17
600
420
Unit
V
V
A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
(JEDEC Method)
Forward Voltage
Peak Reverse Current
At Rated DC Blocking Voltage
Reverse Recovery Time (Note 2)
Typical Junction Capacitance (Note 3)
Operating Temperature Range
Storage Temperature Range
@I
F
= 1.0A
@T
A
= 25°C
@T
A
= 100°C
I
FSM
V
FM
I
RM
t
rr
C
j
T
j
T
STG
50
0.95
30
1.3
5.0
100
35
30
-65 to +125
-65 to +150
1.7
A
V
µA
nS
pF
°C
°C
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case
2. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A. See figure 5.
3. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
SF11 – SF17
1 of 4
© 2006 Won-Top Electronics

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