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BZT03-C8V2

产品描述Zener Diode,
产品类别分立半导体    二极管   
文件大小135KB,共4页
制造商EIC [EIC discrete Semiconductors]
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BZT03-C8V2概述

Zener Diode,

BZT03-C8V2规格参数

参数名称属性值
厂商名称EIC [EIC discrete Semiconductors]
Reach Compliance Codecompliant
ECCN代码EAR99
二极管类型ZENER DIODE

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Certificate TH97/10561QM
Certificate TW00/17276EM
BZT03 Series
FEATURES :
* High maximum operating temperature
* Low leakage current
* Excellent stability
* Zener working voltage range: 7.5 to 270 V for 38 types
* Transient suppressor stand-off voltage range:
7.5 to 430V for 45 types
VOLTAGE REGULATOR DIODES
DO - 41
0.107 (2.7)
0.080 (2.0)
1.00 (25.4)
MIN.
* Pb / RoHS Free
0.205 (5.2)
0.166 (4.2)
MECHANICAL DATA :
* Case : DO-41 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.335 gram
0.034 (0.86)
0.028 (0.71)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS
Rating at 25 °C ambient temperature unless otherwise specified
Parameter
Total Power dissipation
Symbol
P
tot
Condition
Ttp = 25 °C; lead length 10 mm see Fig. 1
Tamb = 45 °C, see Fig. 1; PCB mounted
Min.
-
-
-
Max.
3.25
1.30
600
Unit
W
W
W
Non-repetitive peak reverse
power dissipation
Non-repetitive peak reverse
power dissipation
Forward voltage
Junction Temperature Range
Storage Temperature Range
P
ZSM
tp = 100 µs; square pulse;
Tj = 25°C prior to surge; see Fig. 2
10/1000 µs exponential pulse (see Fig. 4)
Tj = 25°C prior to surge
I
F
= 0.5 A; Tj = 25 °C; see Fig. 3
P
RSM
V
F
T
j
T
stg
-
-
-65
-65
300
1.2
+175
+175
W
V
°C
°C
THERMAL CHARACTERISTICS
Parameter
Thermal resistance from junction to tie-point
Thermal resistance from junction to ambient
Note :
(1) Device mounted on anepoxy-glass printed-circuit board, 1.5 mm thick; thockness of Cu-layer
40 µm on an must space.
Symbol
R
th j-tp
R
th j-a
Condition
lead length = 10 mm
Note 1
Value
46
100
Unit
K/W
K/W
Page 1 of 4
Rev. 01 : March 23, 2006

 
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