VISHAY
BYV12 to BYV16
Vishay Semiconductors
Fast Avalanche Sinterglass Diode
\
Features
•
•
•
•
Glass passivated junction
Hermetically sealed package
Soft recovery characteristic
Low reverse current
Applications
Fast rectification and switching diode for example for
TV-line output circuits and switch mode power supply
Mechanical Data
Case:
Sintered glass case, SOD 57
Terminals:
Plated axial leads, solderable per
MIL-STD-750, Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:
370 mg, (max. 500 mg)
949539
Parts Table
Part
BYV12
BYV13
BYV14
BYV15
BYV16
Type differentiation
V
R
= 100 V; I
FAV
= 1.5 A
V
R
= 400 V; I
FAV
= 1.5 A
V
R
= 600 V; I
FAV
= 1.5 A
V
R
= 800 V; I
FAV
= 1.5 A
V
R
= 1000 V; I
FAV
= 1.5 A
SOD57
SOD57
SOD57
SOD57
SOD57
Package
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Reverse voltage = Repetitive peak reverse
voltage
Test condition
see electrical characteristics
see electrical characteristics
see electrical characteristics
see electrical characteristics
see electrical characteristics
Peak forward surge current
Repetitive peak forward current
Average forward current
Junction and storage temperature range
Non repetitive reverse avalanche energy
I
(BR)R
= 0.4 A
ϕ
= 180 °, T
amb
= 25 °C
t
p
= 10 ms, half sinewave
Sub type
BYV12
BYV13
BYV14
BYV15
BYV16
Symbol
V
R
=
V
RRM
V
R
=
V
RRM
V
R
=
V
RRM
V
R
=
V
RRM
V
R
=
V
RRM
I
FSM
I
FRM
I
FAV
Value
100
400
600
800
1000
40
9
1.5
Unit
V
V
V
V
V
A
A
A
°C
mJ
T
j
= T
stg
- 55 to +
175
E
R
10
Document Number 86039
Rev. 5, 07-Jan-03
www.vishay.com
1
BYV12 to BYV16
Vishay Semiconductors
Maximum Thermal Resistance
T
amb
= 25 °C, unless otherwise specified
Parameter
Junction ambient
Test condition
l = 10 mm, T
L
= constant
on PC board with spacing 25 mm
Sub type
Symbol
R
thJA
R
thJA
Value
45
100
VISHAY
Unit
K/W
K/W
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Forward voltage
Reverse current
Reverse recovery time
Reverse recovery charge
I
F
= 1 A
V
R
= V
RRM
V
R
= V
RRM
, T
j
= 150 °C
I
F
= 0.5 A, I
R
= 1 A, i
R
= 0.25 A
I
F
= 1 A, di/dt = 5 A/µs
Test condition
Sub type
Symbol
V
F
I
R
I
R
t
rr
Q
rr
1
60
Min
Typ.
Max
1.5
5
150
300
200
Unit
V
µA
µA
ns
nC
Typical Characteristics
(T
amb
= 25
°C
unless otherwise specified)
R
thJA
– Therm. Resist. Junction / Ambient ( K/W )
120
l
100
I
F
– Forward Current ( A)
l
10.000
80
60
40
20
0
0
5
10
15
20
25
30
l – Lead Length ( mm )
T
L
=constant
1.000
T
j
=175°C
0.100
T
j
=25°C
0.010
0.001
0.0
16375
0.5
1.0
1.5
2.0
2.5
3.0
94 9101
V
F
– Forward Voltage ( V )
Figure 1. Typ. Thermal Resistance vs. Lead Length
Figure 3. Forward Current vs. Forward Voltage
240
T
j
– Junction Temperature (
°
C )
R
thJA
=100K/W
I
FAV
– Average Forward Current ( A )
200
V
RRM
160
BYV12
120
BYV14
80
BYV13
40
0
BYV15
BYV16
V
R
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
16376
V
R
=V
RRM
half sinewave
R
thJA
=45K/W
l=10mm
R
thJA
=100K/W
PCB: d=25mm
94 9517
1000
0
200
400
600
800
V
R
,V
RRM
– Reverse / Repetitive Peak Reverse
Voltage ( V )
20
40 60 80 100 120 140 160 180
T
amb
– Ambient Temperature (
°C
)
Figure 2. Junction Temperature vs. Reverse/Repetitive Peak
Reverse Voltage
Figure 4. Max. Average Forward Current vs. Ambient Temperature
www.vishay.com
2
Document Number 86039
Rev. 5, 07-Jan-03
VISHAY
BYV12 to BYV16
Vishay Semiconductors
1000
V
R
= V
RRM
C
D
– Diode Capacitance ( pF )
I
R
– Reverse Current (
m
A )
40
35
30
25
20
15
10
5
0
25
50
75
100
125
150
T
j
– Junction Temperature (
°C
)
175
16379
f=1MHz
100
10
1
16377
0.1
1.0
10.0
V
R
– Reverse Voltage ( V )
100.0
Figure 5. Reverse Current vs. Junction Temperature
Figure 7. Diode Capacitance vs. Reverse Voltage
450
P
R
– Reverse Power Dissipation ( mW )
400
350
300
250
200
150
100
50
0
25
50
75
100
P
R
–Limit
@80%V
R
V
R
= V
RRM
P
R
–Limit
@100%V
R
125
150
175
16378
T
j
– Junction Temperature (
°C
)
Figure 6. Max. Reverse Power Dissipation vs. Junction
Temperature
Z
thp
– Thermal Resistance for Pulse Cond. (K/W)
1000
V
RRM
=1000V
R
thJA
=100K/W
100
T
amb
=25°C
T
amb
=45°C
10
T
amb
=60°C
T
amb
=70°C
1
10
–5
T
amb
=100°C
10
–4
10
–3
10
–2
10
–1
10
0
10
1
t
p
– Pulse Length ( s )
10
0
10
1
I
FRM
– Repetitive Peak
Forward Current ( A )
94 9522
Figure 8. Thermal Response
Document Number 86039
Rev. 5, 07-Jan-03
www.vishay.com
3
BYV12 to BYV16
Vishay Semiconductors
Package Dimensions in mm
∅
3.6 max.
Sintered Glass Case
SOD 57
Weight max. 0.5g
Cathode Identification
technical drawings
according to DIN
specifications
94 9538
VISHAY
∅
0.82 max.
26 min.
4.2 max.
26 min.
www.vishay.com
4
Document Number 86039
Rev. 5, 07-Jan-03
VISHAY
Ozone Depleting Substances Policy Statement
It is the policy of
Vishay Semiconductor GmbH
to
BYV12 to BYV16
Vishay Semiconductors
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH
has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH
can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 86039
Rev. 5, 07-Jan-03
www.vishay.com
5
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