BZM55C...
Vishay Telefunken
Silicon Epitaxial Planar Z–Diodes
Features
D
D
D
D
D
D
D
D
D
Saving space
Hermetic sealed parts
Fits onto SOD 323 / SOT 23 footprints
Electrical data identical with the devices
BZT55C... / TZMC...
Very sharp reverse characteristic
Low reverse current level
Very high stability
Low noise
Available with tighter tolerances
96 12315
Applications
Voltage stabilization
Absolute Maximum Ratings
T
j
= 25
_
C
Parameter
Power dissipation
Z–current
Junction temperature
Storage temperature range
Test Conditions
R
thJA
300K/W
x
Type
Symbol
P
V
I
Z
T
j
T
stg
Value
500
P
V
/V
Z
175
–65...+175
Unit
mW
mA
°
C
°
C
Maximum Thermal Resistance
T
j
= 25
_
C
Parameter
Test Conditions
Junction ambient mounted on epoxy–glass hard tissue, Fig. 1
Junction tie point 35
m
m copper clad, 0.9 mm
2
copper area per electrode
Symbol
R
thJA
R
thJL
Value
500
300
Unit
K/W
K/W
Electrical Characteristics
T
j
= 25
_
C
Parameter
Forward voltage
Test Conditions
I
F
=200mA
Type
Symbol
V
F
Min
Typ
Max
1.5
Unit
V
Document Number 85598
Rev. 4, 06-Dec-00
www.vishay.com
1 (6)
BZM55C...
Vishay Telefunken
Type
BZM55C...
2V4
2V7
3V0
3V3
3V6
3V9
4V3
4V7
5V1
5V6
6V2
6V8
7V5
8V2
9V1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
1)
t /T
p
2)
at T =
j
V
Znom
I
ZT
for V
ZT
and r
zjT
V
mA
V
1)
W
2.4
5
2.28 to 2.56 < 85
2.7
5
2.5 to 2.9
< 85
3.0
5
2.8 to 3.2
< 90
3.3
5
3.1 to 3.5
< 90
3.6
5
3.4 to 3.8
< 90
3.9
5
3.7 to 4.1
< 90
4.3
5
4.0 to 4.6
< 90
4.7
5
4.4 to 5.0
< 80
5.1
5
4.8 to 5.4
< 60
5.6
5
5.2 to 6.0
< 40
6.2
5
5.8 to 6.6
< 10
6.8
5
6.4 to 7.2
<8
7.5
5
7.0 to 7.9
<7
8.2
5
7.7 to 8.7
<7
9.1
5
8.5 to 9.6
< 10
10
5
9.4 to 10.6
< 15
11
5
10.4 to 11.6 < 20
12
5
11.4 to 12.7 < 20
13
5
12.4 to 14.1 < 26
15
5
13.8 to 15.6 < 30
16
5
15.3 to 17.1 < 40
18
5
16.8 to 19.1 < 50
20
5
18.8 to 21.2 < 55
22
5
20.8 to 23.3 < 55
24
5
22.8 to 25.6 < 80
27
5
25.1 to 28.9 < 80
30
5
28 to 32
< 80
33
5
31 to 35
< 80
36
5
34 to 38
< 80
39
2.5
37 to 41
< 90
43
2.5
40 to 46
< 90
47
2.5
44 to 50
< 110
51
2.5
48 to 54
< 125
56
2.5
52 to 60
< 135
62
2.5
58 to 66
< 150
68
2.5
64 to 72
< 200
75
2.5
70 to 79
< 250
150
°
C
r
zjk
at
W
< 600
< 600
< 600
< 600
< 600
< 600
< 600
< 600
< 550
< 450
< 200
< 150
< 50
< 50
< 50
< 70
< 70
< 90
< 110
< 110
< 170
< 170
< 220
< 220
< 220
< 220
< 220
< 220
< 220
< 500
< 600
< 700
< 700
< 1000
< 1000
< 1000
< 1500
I
ZK
I
R
and I
R
at V
R
mA
m
A
m
A
2)
V
1
< 100 < 50
1
1
< 10
< 50
1
1
<4
< 40
1
1
<2
< 40
1
1
<2
< 40
1
1
<2
< 40
1
1
<1
< 20
1
1
< 0.5
< 10
1
1
< 0.1
<2
1
1
< 0.1
<2
1
1
< 0.1
<2
2
1
< 0.1
<2
3
1
< 0.1
<2
5
1
< 0.1
<2
6.2
1
< 0.1
<2
6.8
1
< 0.1
<2
7.5
1
< 0.1
<2
8.2
1
< 0.1
<2
9.1
1
< 0.1
<2
10
1
< 0.1
<2
11
1
< 0.1
<2
12
1
< 0.1
<2
13
1
< 0.1
<2
15
1
< 0.1
<2
16
1
< 0.1
<2
18
1
< 0.1
<2
20
1
< 0.1
<2
22
1
< 0.1
<2
24
1
< 0.1
<2
27
1
< 0.1
<5
30
0.5 < 0.1
<5
33
0.5 < 0.1
<5
36
0.5 < 0.1
< 10
39
0.5 < 0.1
< 10
43
0.5 < 0.1
< 10
47
0.5 < 0.1
< 10
51
0.5 < 0.1
< 10
56
TK
VZ
%/K
–0.09 to –0.06
–0.09 to –0.06
–0.08 to –0.05
–0.08 to –0.05
–0.08 to –0.05
–0.08 to –0.05
–0.06 to –0.03
–0.05 to +0.02
–0.02 to +0.02
–0.05 to +0,05
0.03 to 0.06
0.03 to 0.07
0.03 to 0.07
0.03 to 0.08
0.03 to 0.09
0.03 to 0.1
0.03 to 0.11
0.03 to 0.11
0.03 to 0.11
0.03 to 0.11
0.03 to 0.11
0.03 to 0.11
0.03 to 0.11
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
0.04 to 0.12
x
100ms, tighter tolerances available on request.
www.vishay.com
2 (6)
Document Number 85598
Rev. 4, 06-Dec-00
BZM55C...
Vishay Telefunken
Characteristics
(T
j
= 25
_
C unless otherwise specified)
600
P
tot
– Total Power Dissipation ( mW )
500
400
300
200
100
0
0
95 9602
1.3
V
Ztn
– Relative Voltage Change
V
Ztn
=V
Zt
/V
Z
(25°C)
1.2
TK
VZ
=10
10
–4
/K
8
6
10
–4
/K
10
–4
/K
10
–4
/K
10
–4
/K
1.1
4
2
1.0
0.9
0.8
–60
0
–2 10
–4
/K
–4
10
–4
/K
40
80
120
160
200
95 9599
0
60
120
180
240
T
amb
– Ambient Temperature (
°C
)
T
j
– Junction Temperature (
°C
)
Figure 1. Total Power Dissipation vs.
Ambient Temperature
1000
– Voltage Change ( mV )
Figure 3. Typical Change of Working Voltage vs.
Junction Temperature
TK
VZ
– Temperature Coefficient of V
Z
( 10
–4
/K )
15
T
j
= 25°C
100
10
5
I
Z
=5mA
0
I
Z
=5mA
10
D
V
Z
1
0
95 9598
–5
0
10
20
30
40
50
V
Z
– Z-Voltage ( V )
5
10
15
20
25
V
Z
– Z-Voltage ( V )
95 9600
Figure 2. Typical Change of Working Voltage
under Operating Conditions at T
amb
=25
°
C
Figure 4. Temperature Coefficient of Vz vs. Z–Voltage
200
C
D
– Diode Capacitance ( pF )
150
V
R
= 2V
100
T
j
= 25°C
50
0
0
95 9601
5
10
15
20
25
V
Z
– Z-Voltage ( V )
Figure 5. Diode Capacitance vs. Z–Voltage
Document Number 85598
Rev. 4, 06-Dec-00
www.vishay.com
3 (6)
BZM55C...
Vishay Telefunken
100
I
F
– Forward Current ( mA )
50
P
tot
=500mW
T
amb
=25°C
T
j
= 25°C
1
I
Z
– Z-Current ( mA )
1.0
95 9607
10
40
30
0.1
0.01
0.001
0
0.2
0.4
0.6
0.8
20
10
0
15
20
25
30
35
95 9605
V
F
– Forward Voltage ( V )
V
Z
– Z-Voltage ( V )
Figure 6. Forward Current vs. Forward Voltage
1000
r
Z
– Differential Z-Resistance (
W
)
100
Figure 8. Z–Current vs. Z–Voltage
I
Z
– Z-Current ( mA )
80
P
tot
=500mW
T
amb
=25°C
60
I
Z
=1mA
100
5mA
10 10mA
40
20
0
0
4
8
12
16
20
1
0
95 9606
T
j
= 25°C
5
10
15
20
25
V
Z
– Z-Voltage ( V )
95 9604
V
Z
– Z-Voltage ( V )
Figure 9. Differential Z–Resistance vs. Z–Voltage
Z
thp
– Thermal Resistance for Pulse Cond. (K/W)
Figure 7. Z–Current vs. Z–Voltage
1000
t
p
/T=0.5
100
t
p
/T=0.2
Single Pulse
10
t
p
/T=0.1
t
p
/T=0.05
1
10
–1
t
p
/T=0.02
i
ZM
=(–V
Z
+(V
Z2
+4r
zj
t
p
/T=0.01
R
thJA
=300K/W
D
T=T
jmax
–T
amb
D
T/Z
thp
)
1/2
)/(2r
zj
)
10
0
10
1
t
p
– Pulse Length ( ms )
10
2
95 9603
Figure 10. Thermal Response
www.vishay.com
4 (6)
Document Number 85598
Rev. 4, 06-Dec-00
BZM55C...
Vishay Telefunken
0.71
1.3
1.27
16773
Reflow Soldering
1.2
0.152
9.9
25
0.355
0.8
0.8
2.4
0.8
Figure 12. Recommended foot pads (in mm)
10
Wave Soldering
16774
2.5
24
1.4
95 10329
0.9
1.0
2.8
0.9
Figure 11. Board for R
thJA
definition (in mm)
Figure 13. Recommended foot pads (in mm)
Dimensions in mm
96 12072
Document Number 85598
Rev. 4, 06-Dec-00
www.vishay.com
5 (6)
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