Datasheet> 器件分类 > 分立半导体> 二极管> BYV26B(Z)

文档预览

BYV26B(Z): 产品描述Rectifier Diode, 1 Element, 1A, 400V V(RRM),; 产品类别分立半导体二极管; 文件大小53KB，共2页; 制造商Galaxy Semi-Conductor Co Ltd; 标准

下载文档详细参数选型对比全文预览

BYV26B(Z)概述

Rectifier Diode, 1 Element, 1A, 400V V(RRM),

BYV26B(Z)规格参数

参数名称	属性值
是否Rohs认证	符合
厂商名称	Galaxy Semi-Conductor Co Ltd
Reach Compliance Code	unknown
ECCN代码	EAR99
配置	SINGLE
二极管类型	RECTIFIER DIODE
最大正向电压 (VF)	2.5 V
最大非重复峰值正向电流	30 A
元件数量	1
最高工作温度	150 °C
最大输出电流	1 A
最大重复峰值反向电压	400 V
最大反向恢复时间	0.03 µs
表面贴装	NO

文档预览

下载PDF文档

全文
预览

FEATURES

GALAXY ELECTRICAL

BYV26A(Z) - - - BYV26E(Z)

VOLTAGE RANGE: 200 --- 1000 V

CURRENT: 1.0 A

SUPER FAST RECTIFIERS

Low cost

Diffused junction

Low leakage

Low forward voltage drop

High current capability

Easily cleaned with alcohol,Isopropanol

and similar solvents

DO - 41

MECHANICAL DATA

Case: JEDEC DO-41,molded plastic

Terminals: Axial lead ,solderable per

MIL- STD-202,Method 208

Polarity: Color band denotes cathode

Weight: 0.012 ounces,0.34 grams

Mounting position: Any

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25

ambient temperature unless otherwise specified.

Single phase,half wave,50 Hz,resistive or inductive load. For capacitive load,derate by 20%.

BYV26A

Maximum recurrent peak reverse voltage

Maximum RMS voltage

Maximum DC blocking voltage

Maximum average forw ard rectified current

9.5

mm lead length,

=75

BYV26B BYV26C BYV26D

400

280

400

600

420

600

1.0

800

560

800

BYV26E

1000

700

1000

UNITS

RRM

RMS

F(AV)

200

140

200

Peak forw ard surge current

10ms single half-sine-w ave

superimposed on rated load

=125

FSM

30.0

Maximum instantaneous forw ard voltage

@ 1.0A

Maximum reverse current

=25

STG

2.5

5.0

150.0

100

- 55 ----- + 150

at rated DC blocking voltage @T

=100

Maximum reverse recovery time (Note1)

Typical junction capacitance

Typical thermal resistance

(Note2)

(Note3)

Operating junction temperature range

Storage temperature range

NOTE: 1. Measured with I

=0.5A, I

=1A, I

=0.25A.

2. Measured at 1MHz and applied rev erse v oltage of 4.0V DC.

3. Thermal resistance f rom junction to ambient.

www.galaxycn.com

Document Number 0264013

GALAXY ELECTRICAL

BYV26B(Z)相似产品对比

	BYV26B(Z)	BYV26A(Z)	BYV26C(Z)	BYV26D(Z)	BYV26E(Z)
描述	Rectifier Diode, 1 Element, 1A, 400V V(RRM),	Rectifier Diode, 1 Element, 1A, 200V V(RRM),	Rectifier Diode, 1 Element, 1A, 600V V(RRM),	Rectifier Diode, 1 Element, 1A, 800V V(RRM),	Rectifier Diode, 1 Element, 1A, 1000V V(RRM),
是否Rohs认证	符合	符合	符合	符合	符合
厂商名称	Galaxy Semi-Conductor Co Ltd	Galaxy Semi-Conductor Co Ltd	Galaxy Semi-Conductor Co Ltd	Galaxy Semi-Conductor Co Ltd	Galaxy Semi-Conductor Co Ltd
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99
配置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
二极管类型	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
最大正向电压 (VF)	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V
最大非重复峰值正向电流	30 A	30 A	30 A	30 A	30 A
元件数量	1	1	1	1	1
最高工作温度	150 °C	150 °C	150 °C	150 °C	150 °C
最大输出电流	1 A	1 A	1 A	1 A	1 A
最大重复峰值反向电压	400 V	200 V	600 V	800 V	1000 V
最大反向恢复时间	0.03 µs	0.03 µs	0.03 µs	0.075 µs	0.075 µs
表面贴装	NO	NO	NO	NO	NO

推荐资源

器件捷径: S0 S1 S2 S3 S4 S5 S6 S7 S8 S9 SA SB SC SD SE SF SG SH SI SJ SK SL SM SN SO SP SQ SR SS ST SU SV SW SX SY SZ T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 TA TB TC TD TE TF TG TH TI TJ TK TL TM TN TO TP TQ TR TS TT TU TV TW TX TY TZ U0 U1 U2 U3 U4 U6 U7 U8 UA UB UC UD UE UF UG UH UI UJ UK UL UM UN UP UQ UR US UT UU UV UW UX UZ V0 V1 V2 V3 V4 V5 V6 V7 V8 V9 VA VB VC VD VE VF VG VH VI VJ VK VL VM VN VO VP VQ VR VS VT VU VV VW VX VY VZ W0 W1 W2 W3 W4 W5 W6 W7 W8 W9 WA WB WC WD WE WF WG WH WI WJ WK WL WM WN WO WP WR WS WT WU WV WW WY X0 X1 X2 X3 X4 X5 X7 X8 X9 XA XB XC XD XE XF XG XH XK XL XM XN XO XP XQ XR XS XT XU XV XW XX XY XZ Y0 Y1 Y2 Y4 Y5 Y6 Y9 YA YB YC YD YE YF YG YH YK YL YM YN YP YQ YR YS YT YX Z0 Z1 Z2 Z3 Z4 Z5 Z6 Z8 ZA ZB ZC ZD ZE ZF ZG ZH ZJ ZL ZM ZN ZP ZR ZS ZT ZU ZV ZW ZX ZY

热门器件

开源项目推荐更多

热门活动更多

热门文章更多

技术资料推荐更多