VISHAY
BYV27-600
Vishay Semiconductors
Ultra Fast Avalanche Sinterglass Diode
\
Features
•
•
•
•
Glass passivated
Hermetically sealed axial-leaded glass envelope
Low reverse current
Ultra fast soft recovery switching
Applications
Electronic ballast
SMPS
Mechanical Data
Case:
Sintered glass case, SOD 57
Terminals:
Plated axial leads, solderable per
MIL-STD-750, Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:
370 mg, (max. 500 mg)
949539
Parts Table
Part
BYV27-600
Type differentiation
V
R
= 600 V; I
FAV
= 2 A
SOD57
Package
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Reverse voltage = Repetitive peak reverse
voltage
Peak forward surge current
Average forward current
Non-repetitive reverse avalanche energy
Junction and storage temperature range
Test condition
see electrical characteristics
t
p
= 10 ms, half-sinewave
T
amb
= 50 °C, l = 10 mm
Inductive load, I
(BR)R
= 400 mA
Sub type
Symbol
V
R
=
V
RRM
I
FSM
I
FAV
E
R
Value
600
50
2
10
Unit
V
A
A
mJ
°C
T
j
= T
stg
- 55 to +
175
Maximum Thermal Resistance
T
amb
= 25 °C, unless otherwise specified
Parameter
Junction ambient
Test condition
Lead length l = 10 mm, T
L
=
constant
on PC board with spacing 25 mm
Sub type
Symbol
R
thJA
R
thJA
Value
45
100
Unit
K/W
K/W
Document Number 86041
Rev. 4, 07-Jan-03
www.vishay.com
1
BYV27-600
Vishay Semiconductors
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Forward voltage
I
F
= 1 A
I
F
= 3 A
I
F
= 1 A, T
j
= 175 °C
I
F
= 3 A, T
j
= 1 75 °C
Reverse current
Reverse breakdown voltage
Reverse recovery time
Forward recovery
Forward recovery time
V
R
= V
RRM
V
R
= V
RRM
, T
j
= 150 °C
I
R
= 100
µA
I
F
= 0.5 A, I
R
= 1 A, i
R
= 0.25 A
I
F
= 1 A
I
F
= 1 A
Test condition
Sub type
Symbol
V
F
V
F
V
F
V
F
I
R
I
R
V
(BR)R
t
rr
V
FP
t
fr
3.4
250
600
Min
Typ.
VISHAY
Max
1.15
1.35
0.85
1.15
5
150
40
Unit
V
V
V
V
µA
µA
V
ns
V
ns
Typical Characteristics
(T
amb
= 25
°C
unless otherwise specified)
350
I
FAV
– Average Forward Current ( A )
2.2
V
R
= V
RRM
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
25
50
75
100
125
150
175
14359
P
R
– Reverse Power Dissipation ( mW )
300
250
200
150
100
50
0
R
thJA
=
45K/W
100K/W
160K/W
P
R
–Limit
@80%V
R
P
R
–Limit
@100%V
R
V
R
=V
RRM
half sinewave
R
thJA
v45K/W
l=10mm
R
thJA
v100K/W
PCB: d=25mm
0
20
40
60
80 100 120 140 160 180
14360
T
j
– Junction Temperature (
°C
)
T
amb
– Ambient Temperature (
°C
)
Figure 1.
Figure 3. Max. Average Forward Current vs. Ambient Temperature
1000
V
R
= V
RRM
I
R
– Reverse Current (
m
A )
I
F
– Forward Current ( A )
100
10
1
T
j
=25°C
0.1
0.01
T
j
=175°C
100
10
1
25
14361
0.001
50
75
100
125
150
175
14358
0.0
0.4
T
j
– Junction Temperature (
°C
)
0.8 1.2 1.6 2.0 2.4
V
F
– Forward Voltage ( V )
2.8
Figure 2. Max. Reverse Current vs. Junction Temperature
Figure 4. Max. Forward Current vs. Forward Voltage
www.vishay.com
2
Document Number 86041
Rev. 4, 07-Jan-03
BYV27-600
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of
Vishay Semiconductor GmbH
to
1. Meet all present and future national and international statutory requirements.
VISHAY
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH
has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH
can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay.com
4
Document Number 86041
Rev. 4, 07-Jan-03
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