Page Mode DRAM, 64KX1, 200ns, NMOS, CDIP16, CERDIP-16
| 参数名称 | 属性值 |
| Objectid | 1425567463 |
| 包装说明 | DIP, |
| Reach Compliance Code | unknown |
| ECCN代码 | EAR99 |
| YTEOL | 0 |
| 访问模式 | PAGE |
| 最长访问时间 | 200 ns |
| 其他特性 | RAS ONLY/HIDDEN REFRESH |
| JESD-30 代码 | R-GDIP-T16 |
| 长度 | 19.585 mm |
| 内存密度 | 65536 bit |
| 内存集成电路类型 | PAGE MODE DRAM |
| 内存宽度 | 1 |
| 功能数量 | 1 |
| 端口数量 | 1 |
| 端子数量 | 16 |
| 字数 | 65536 words |
| 字数代码 | 64000 |
| 工作模式 | ASYNCHRONOUS |
| 最高工作温度 | 70 °C |
| 最低工作温度 | |
| 组织 | 64KX1 |
| 输出特性 | 3-STATE |
| 封装主体材料 | CERAMIC, GLASS-SEALED |
| 封装代码 | DIP |
| 封装形状 | RECTANGULAR |
| 封装形式 | IN-LINE |
| 认证状态 | Not Qualified |
| 刷新周期 | 128 |
| 座面最大高度 | 5.08 mm |
| 最大供电电压 (Vsup) | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V |
| 标称供电电压 (Vsup) | 5 V |
| 表面贴装 | NO |
| 技术 | NMOS |
| 温度等级 | COMMERCIAL |
| 端子形式 | THROUGH-HOLE |
| 端子节距 | 2.54 mm |
| 端子位置 | DUAL |
| 宽度 | 7.62 mm |
| MB8265-20Z | MB8265-15P | MB8265-15Z | MB8265-20 | MB8265-20P | MB8265-15 | |
|---|---|---|---|---|---|---|
| 描述 | Page Mode DRAM, 64KX1, 200ns, NMOS, CDIP16, CERDIP-16 | Page Mode DRAM, 64KX1, 150ns, NMOS, PDIP16, PLASTIC, DIP-16 | Page Mode DRAM, 64KX1, 150ns, NMOS, CDIP16, CERDIP-16 | Page Mode DRAM, 64KX1, 200ns, NMOS, CQCC18 | 64KX1 PAGE MODE DRAM, 200ns, PDIP16, PLASTIC, DIP-16 | Page Mode DRAM, 64KX1, 150ns, NMOS, CQCC18 |
| 包装说明 | DIP, | DIP, | DIP, | QCCN, | DIP, | QCCN, |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| 访问模式 | PAGE | PAGE | PAGE | PAGE | PAGE | PAGE |
| 最长访问时间 | 200 ns | 150 ns | 150 ns | 200 ns | 200 ns | 150 ns |
| 其他特性 | RAS ONLY/HIDDEN REFRESH | RAS ONLY/HIDDEN REFRESH | RAS ONLY/HIDDEN REFRESH | RAS ONLY/HIDDEN REFRESH | RAS ONLY/HIDDEN REFRESH | RAS ONLY/HIDDEN REFRESH |
| JESD-30 代码 | R-GDIP-T16 | R-PDIP-T16 | R-GDIP-T16 | R-CQCC-N18 | R-PDIP-T16 | R-CQCC-N18 |
| 内存密度 | 65536 bit | 65536 bit | 65536 bit | 65536 bit | 65536 bit | 65536 bit |
| 内存集成电路类型 | PAGE MODE DRAM | PAGE MODE DRAM | PAGE MODE DRAM | PAGE MODE DRAM | PAGE MODE DRAM | PAGE MODE DRAM |
| 内存宽度 | 1 | 1 | 1 | 1 | 1 | 1 |
| 功能数量 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端口数量 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 16 | 16 | 16 | 18 | 16 | 18 |
| 字数 | 65536 words | 65536 words | 65536 words | 65536 words | 65536 words | 65536 words |
| 字数代码 | 64000 | 64000 | 64000 | 64000 | 64000 | 64000 |
| 工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| 最高工作温度 | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C |
| 组织 | 64KX1 | 64KX1 | 64KX1 | 64KX1 | 64KX1 | 64KX1 |
| 输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| 封装主体材料 | CERAMIC, GLASS-SEALED | PLASTIC/EPOXY | CERAMIC, GLASS-SEALED | CERAMIC, METAL-SEALED COFIRED | PLASTIC/EPOXY | CERAMIC, METAL-SEALED COFIRED |
| 封装代码 | DIP | DIP | DIP | QCCN | DIP | QCCN |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | IN-LINE | IN-LINE | IN-LINE | CHIP CARRIER | IN-LINE | CHIP CARRIER |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 刷新周期 | 128 | 128 | 128 | 128 | 128 | 128 |
| 最大供电电压 (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
| 标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 表面贴装 | NO | NO | NO | YES | NO | YES |
| 技术 | NMOS | NMOS | NMOS | NMOS | NMOS | NMOS |
| 温度等级 | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL |
| 端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | NO LEAD | THROUGH-HOLE | NO LEAD |
| 端子位置 | DUAL | DUAL | DUAL | QUAD | DUAL | QUAD |
| Objectid | 1425567463 | 1425567449 | 1425567447 | 1425567467 | - | 1425567451 |
| 长度 | 19.585 mm | 19.35 mm | 19.585 mm | - | 19.35 mm | - |
| 座面最大高度 | 5.08 mm | 4.65 mm | 5.08 mm | - | 4.65 mm | - |
| 端子节距 | 2.54 mm | 2.54 mm | 2.54 mm | - | 2.54 mm | - |
| 宽度 | 7.62 mm | 7.62 mm | 7.62 mm | - | 7.62 mm | - |
电子工程世界版权所有
京B2-20211791
京ICP备10001474号-1
电信业务审批[2006]字第258号函
京公网安备 11010802033920号
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
