30 V, PNP, Si, SMALL SIGNAL TRANSISTOR
30 V, PNP, 硅, 小信号晶体管
参数名称 | 属性值 |
厂商名称 | NXP(恩智浦) |
包装说明 | SMALL OUTLINE, R-PDSO-G3 |
Reach Compliance Code | unknow |
ECCN代码 | EAR99 |
Is Samacsys | N |
其他特性 | LOW NOISE |
最大集电极电流 (IC) | 0.1 A |
集电极-发射极最大电压 | 45 V |
配置 | SINGLE |
最小直流电流增益 (hFE) | 125 |
JESD-30 代码 | R-PDSO-G3 |
元件数量 | 1 |
端子数量 | 3 |
最高工作温度 | 150 °C |
封装主体材料 | PLASTIC/EPOXY |
封装形状 | RECTANGULAR |
封装形式 | SMALL OUTLINE |
极性/信道类型 | PNP |
认证状态 | Not Qualified |
表面贴装 | YES |
端子形式 | GULL WING |
端子位置 | DUAL |
晶体管应用 | AMPLIFIER |
晶体管元件材料 | SILICON |
标称过渡频率 (fT) | 100 MHz |
VCEsat-Max | 0.65 V |
Base Number Matches | 1 |
BC860 | BC859 | BC859B | BC859C | BC860B | BC860C | |
---|---|---|---|---|---|---|
描述 | 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR | 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR | 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR | 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR | 100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR | RF SMALL SIGNAL TRANSISTOR |
包装说明 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | PLASTIC PACKAGE-3 | PLASTIC PACKAGE-3 | PLASTIC PACKAGE-3 | PLASTIC PACKAGE-3 |
Reach Compliance Code | unknow | unknow | compli | compli | compli | compli |
ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
其他特性 | LOW NOISE | LOW NOISE | LOW NOISE | LOW NOISE | LOW NOISE | LOW NOISE |
最大集电极电流 (IC) | 0.1 A | 0.1 A | 0.1 A | 0.1 A | 0.1 A | 0.1 A |
集电极-发射极最大电压 | 45 V | 30 V | 30 V | 30 V | 45 V | 45 V |
配置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
最小直流电流增益 (hFE) | 125 | 125 | 220 | 420 | 220 | 420 |
JESD-30 代码 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 |
元件数量 | 1 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 3 | 3 | 3 | 3 | 3 | 3 |
最高工作温度 | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
极性/信道类型 | PNP | PNP | PNP | PNP | PNP | PNP |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
表面贴装 | YES | YES | YES | YES | YES | YES |
端子形式 | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING |
端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
晶体管应用 | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER |
晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
标称过渡频率 (fT) | 100 MHz | 100 MHz | 100 MHz | 100 MHz | 100 MHz | 100 MHz |
VCEsat-Max | 0.65 V | 0.65 V | 0.65 V | 0.65 V | 0.65 V | 0.65 V |
厂商名称 | NXP(恩智浦) | NXP(恩智浦) | - | NXP(恩智浦) | - | NXP(恩智浦) |
是否无铅 | - | - | 不含铅 | 不含铅 | 不含铅 | 不含铅 |
是否Rohs认证 | - | - | 符合 | 符合 | 符合 | 符合 |
零件包装代码 | - | - | SOT-23 | SOT-23 | SOT-23 | SOT-23 |
针数 | - | - | 3 | 3 | 3 | 3 |
JEDEC-95代码 | - | - | TO-236AB | TO-236AB | TO-236AB | TO-236AB |
JESD-609代码 | - | - | e3 | e3 | e3 | e3 |
湿度敏感等级 | - | - | 1 | 1 | 1 | 1 |
峰值回流温度(摄氏度) | - | - | 260 | 260 | 260 | 260 |
最大功率耗散 (Abs) | - | - | 0.25 W | 0.3 W | 0.3 W | 0.3 W |
端子面层 | - | - | Tin (Sn) | Tin (Sn) | Tin (Sn) | Tin (Sn) |
处于峰值回流温度下的最长时间 | - | - | 30 | 30 | 30 | 30 |
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