AP92T12GP-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
▼
Simple Drive Requirement
▼
Lower On-resistance
▼
RoHS Compliant & Halogen-Free
G
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BV
DSS
R
DS(ON)
I
D
120V
8.5mΩ
130A
S
Description
AP92T12 series are from Advanced Power innovated design
and silicon process technology to achieve the lowest possible
on-resistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide
range of power applications.
The TO-220 package is widely preferred for all commercial-
industrial through hole applications. The low thermal
resistance and low package cost contribute to the worldwide
popular package.
G
D
S
TO-220(P)
Absolute Maximum Ratings@T
j
=25
o
C(unless otherwise specified)
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Chip)
Drain Current, V
GS
@ 10V
Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
3
Rating
120
+20
130
120
95
300
375
-55 to 175
-55 to 175
Units
V
V
A
A
A
A
W
℃
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maixmum Thermal Resistance, Junction-ambient
Value
0.4
62
Units
℃/W
℃/W
1
201501142
Data and specifications subject to change without notice
AP92T12GP-HF
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Test Conditions
V
GS
=0V, I
D
=250uA
V
GS
=10V, I
D
=30A
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=30A
V
DS
=96V, V
GS
=0V
V
GS
= +20V, V
DS
=0V
I
D
=30A
V
DS
=96V
V
GS
=10V
V
DS
=60V
I
D
=30A
R
G
=3.3 ,V
GS
=10V
R
D
=2
V
GS
=0V
V
DS
=25V
f=1.0MHz
f=1.0MHz
Min.
120
-
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
62
-
-
97
27
48
27
96
42
60
800
260
2
Max. Units
-
8.5
5
-
25
+100
155
-
-
-
-
-
-
-
-
-
V
mΩ
V
S
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
4600 7360
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward On Voltage
2
Test Conditions
I
S
=30A, V
GS
=0V
I
S
=10A, V
GS
=0V
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
80
260
Max. Units
1.3
-
-
V
ns
nC
Reverse Recovery Time
Reverse Recovery Charge
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Package limitation current is 120A.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP92T12GP-HF
200
160
T
C
= 25 C
160
o
10V
9.0V
8.0V
I
D
, Drain Current (A)
120
T
C
= 175
o
C
I
D
, Drain Current (A)
10V
9.0V
8.0V
7.0V
120
7.0V
80
80
V
GS
=6.0V
40
40
V
GS
=6.0V
0
0
4
8
12
16
20
24
0
0
4
8
12
16
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.2
3.0
2.6
I
D
=30A
V
G
=10V
1.1
Normalized R
DS(ON)
Normalized BV
DSS
2.2
1.8
1
1.4
1.0
0.9
0.6
0.8
-50
0
50
100
150
200
0.2
-50
0
50
100
150
200
T
j
, Junction Temperature ( C)
o
T
j
, Junction Temperature ( C)
o
Fig 3. Normalized BV
DSS
v.s. Junction
Temperature
40
1.6
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
30
1.2
T
j
=175
o
C
20
T
j
=25
o
C
Normalized V
GS(th)
1.2
I
S
(A)
0.8
10
0.4
0
0
0.2
0.4
0.6
0.8
1
0.0
-50
0
50
100
150
200
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP92T12GP-HF
12
6000
f=1.0MHz
V
GS
, Gate to Source Voltage (V)
10
I
D
= 30 A
V
DS
=96V
5000
C
iss
8
4000
C (pF)
6
3000
4
2000
2
1000
C
oss
C
rss
1
5
9
13
17
21
25
29
0
0
20
40
60
80
100
120
0
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
1
Normalized Thermal Response (R
thjc
)
Duty factor=0.5
100
Operation in this
area limited by
R
DS(ON)
100us
1ms
10ms
0.2
I
D
(A)
0.1
0.1
0.05
P
DM
0.02
10
t
T
100ms
0.01
T
c
=25 C
Single Pulse
1
0.01
0.1
1
10
100
o
DC
Single Pulse
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
0.01
1000
0.00001
0.0001
0.001
0.01
0.1
1
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
10V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
AP92T12GP-HF
MARKING INFORMATION
92T12GP
YWWSSS
Part Number
meet Rohs requirement
for low voltage MOSFET only
Package Code
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
5
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