AP90T03P-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
▼
Lower On- resistance
▼
Simple Drive Requirement
▼
Fast Switching Characteristic
▼
RoHS Compliant & Halogen-Free
G
S
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BV
DSS
R
DS(ON)
I
D
30V
4mΩ
75A
Description
AP90T03 series are from Advanced Power innovated design
and silicon process technology to achieve the lowest possible
on-resistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide
range of power applications.
The TO-220 package is widely preferred for all commercial-
industrial through hole applications. The low thermal resistance
and low package cost contribute to the worldwide popular
package.
G
D
TO-220(P)
S
Absolute Maximum Ratings@T
j
=25
o
C(unless otherwise specified)
Symbol
V
DS
V
GS
I
D
@T
c
=25℃
I
D
@T
c
=100℃
I
DM
P
D
@T
c
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current, V
GS
@10V
3
Drain Current, V
GS
@10V
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
.
Rating
30
+20
75
63
350
96
0.7
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Value
1.3
62
Units
℃/W
℃/W
Data and specifications subject to change without notice
1
201501135
AP90T03P-HF
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Test Conditions
V
GS
=0V, I
D
=1mA
V
GS
=10V, I
D
=45A
V
GS
=4.5V, I
D
=30A
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=30A
V
DS
=30V, V
GS
=0V
V
GS
= +20V, V
DS
=0V
I
D
=40A
V
DS
=24V
V
GS
=4.5V
V
DS
=15V
I
D
=30A
R
G
=3.3Ω,V
GS
=10V
R
D
=0.5Ω
V
GS
=0V
V
DS
=25V
f=1.0MHz
Min.
30
-
-
0.8
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
55
-
-
-
60
8.5
38
14
83
66
120
Max. Units
-
4
6
3
-
1
250
+100
96
-
-
-
-
-
-
V
m
m
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Drain-Source Leakage Current (T
j
=125
o
C)
V
DS
=24V ,V
GS
=0V
.
4090 6540
1010
890
-
-
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward On Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
I
S
=45A, V
GS
=0V
I
S
=30A, V
GS
=0V,
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
51
63
Max. Units
1.3
-
-
V
ns
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Package limitation current is 75A, calculated continuous current
based on maximum allowable junction temperature is 125A.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP90T03P-HF
200
160
T
C
=25
160
o
I
D
, Drain Current (A)
I
D
, Drain Current (A)
120
10V
7.0V
5.0V
4.5V
V
G
=3.0V
140
T
C
= 1 50
o
120
10V
7.0V
5.0V
4.5V
V
G
=3.0V
100
80
80
60
40
40
20
0
0
1
2
3
0
0
1
2
3
4
5
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
6.0
2.0
I
D
=20A
T
C
=25
o
1.8
I
D
= 45 A
V
G
=10V
1.5
R
DS(ON)
(m
Ω
)
5.0
Normalized R
DS(ON)
1.3
.
4.0
1.0
0.8
0.5
0.3
3.0
0.0
2
4
6
8
10
-50
0
50
100
150
V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2
20
15
1.5
T
j
=150
Is (A)
10
o
T
j
=25
o
V
GS(th)
(V)
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1
5
0.5
0
0
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP90T03P-HF
f=1.0MHz
14
10000
I
D
= 40
12
V
GS
, Gate to Source Voltage (V)
10
V
DS
=15V
V
DS
=20V
V
DS
=24V
C (pF)
1000
Ciss
8
Coss
Crss
6
4
2
0
100
0
20
40
60
80
100
120
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
V
DS
,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
1
Normalized Thermal Response (R
thjc
)
Duty factor=0.5
100
100us
0.2
I
D
(A)
0.1
1ms
10
.
0.1
0.05
P
DM
0.02
t
T
T
c
=25 C
Single
1
0.1
1
10
o
10ms
100ms
DC
0.01
Single Pulse
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
0.01
100
0.00001
0.0001
0.001
0.01
0.1
1
10
V
DS
,Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
4.5V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
AP90T03P-HF
MARKING INFORMATION
Part Number
90T03P
Package Code
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
.
5
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