AP2306AGN-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
▼
Capable of 1.8V Gate Drive
▼
Lower On-resistance
▼
Surface Mount Package
▼
RoHS Compliant
SOT-23
D
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
BV
DSS
R
DS(ON)
I
D
S
G
30V
35mΩ
5A
D
Description
Advanced Power MOSFETs utilized advanced processing
techniques to achieve the lowest possible on-resistance, extremely
efficient and cost-effectiveness device.
The SOT-23 package is widely used for all commercial-industrial
applications.
G
S
Absolute Maximum Ratings@T
j
=25
o
C(unless otherwise specified)
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
3
, V
GS
@ 4.5V
Drain Current , V
GS
@ 4.5V
Pulsed Drain Current
1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
3
.
Rating
30
+8
5
4
20
1.38
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
℃
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance Junction-ambient
3
Value
90
Unit
℃/W
1
201411073
Data and specifications subject to change without notice
AP2306AGN-HF
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Test Conditions
V
GS
=0V, I
D
=250uA
V
GS
=4.5V, I
D
=5A
V
GS
=2.5V, I
D
=2.6A
V
GS
=1.8V, I
D
=1.0A
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
=V
GS
, I
D
=250uA
V
DS
=5V, I
D
=5A
V
DS
=24V, V
GS
=0V
V
GS
= +8V, V
DS
=0V
I
D
=5A
V
DS
=16V
V
GS
=4.5V
V
DS
=15V
I
D
=1A
R
G
=3.3Ω
V
GS
=5V
V
GS
=0V
V
DS
=25V
f=1.0MHz
Min.
30
-
-
-
0.3
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
-
9
-
-
8.5
1
3
5
9
20
5
400
90
70
Max. Units
-
35
50
80
1.2
-
10
+100
15
-
-
-
-
-
-
1050
-
-
V
mΩ
mΩ
mΩ
V
S
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
.
Source-Drain Diode
Symbol
V
SD
Parameter
Forward On Voltage
2
Test Conditions
I
S
=1.2A, V
GS
=0V
Min.
-
Typ.
-
Max. Units
1.2
V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in
2
copper pad of FR4 board, t < 10s ; 270℃/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP2306AGN-HF
80
50
T
A
=25
o
C
I
D
, Drain Current (A)
60
5.0V
I
D
, Drain Current (A)
4.5V
4.0V
T
A
=150
o
C
40
5.0V
4.5V
30
40
V
G
=2.5V
4.0V
20
20
10
V
G
=2.5V
0
0
1
2
3
4
5
6
7
0
0
1
2
3
4
5
6
7
8
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
60
2.0
I
D
=2.6A
T
A
=25
o
C
1.6
I
D
=5A
V
G
=4.5V
Normalized R
DS(ON)
50
R
DS(ON)
(m
Ω
)
1.2
40
.
0.8
30
0.4
20
0
2
4
6
8
0.0
-50
0
50
100
150
V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
10
1.2
1
T
j
=150
o
C
T
j
=25 C
o
Normalized V
GS(th)
I
S
(A)
0.8
0.1
0.4
0.01
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C )
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP2306AGN-HF
8
600
f=1.0MHz
V
GS
, Gate to Source Voltage (V)
500
6
C (pF)
I
D
=5A
V
DS
=16V
4
400
C
iss
300
200
2
100
C
oss
C
rss
0
0
0
4
8
12
16
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Duty factor=0.5
Normalized Thermal Response (R
thja
)
0.2
10
0.1
0.1
I
D
(A)
1ms
1
0.05
10ms
0.1
.
P
DM
0.01
t
T
0.01
Single Pulse
100ms
o
T
A
=25 C
Single Pulse
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
Rthja = 270℃/W
1s
DC
1
10
100
0.01
0.1
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
4.5V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
AP2306AGN-HF
MARKING INFORMATION
Part Number : N8
N8SS
Date Code : SS
SS:2004,2008,2012…
SS:2003,2007,2011…
SS:2002,2006,2010…
SS:2001,2005,2009…
.
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
