PD - 91097E
IRF7105
HEXFET
®
Power MOSFET
Advanced Process Technology
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Ultra Low On-Resistance
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Dual N and P Channel Mosfet
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Surface Mount
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Available in Tape & Reel
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Dynamic dv/dt Rating
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Fast Switching
Description
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S1
G1
S2
G2
N-CHANNEL MOSFET
1
8
D1
D1
D2
D2
N-Ch
V
DSS
R
DS(on)
I
D
25V
0.10Ω
3.5A
P-Ch
-25V
0.25Ω
-2.3A
2
7
3
6
4
5
P-CHANNEL MOSFET
Top View
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
the lowest possible on-resistance per silicon area.
This benefit, combined with the fast switching speed
and ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements,
multiple devices can be used in an application with
dramatically reduced board space. The package is
designed for vapor phase, infra red, or wave soldering
techniques. Power dissipation of greater than 0.8W
is possible in a typical PCB mount application.
SO-8
Absolute Maximum Ratings
Parameter
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
C
= 25°C
V
GS
dv/dt
T
J,
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Max.
N-Channel
3.5
2.8
14
2.0
0.016
± 20
3.0
-55 to + 150
-3.0
P-Channel
-2.3
-1.8
-10
Units
A
W
W/°C
V
V/nS
°C
Thermal Resistance Ratings
R
θJA
Maximum Junction-to-Ambient
Parameter
Min.
Typ.
Max.
62.5
Units
°C/W
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1
07/18/03
IRF7105
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-P
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-P
N-P
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min.
25
-25
1.0
-1.0
Typ. Max.
0.030
-0.015
0.083 0.10
0.14 0.16
0.16 0.25
0.30 0.40
3.0
-3.0
4.3
3.1
2.0
-2.0
25
-25
±100
9.4 27
10
25
1.7
1.9
3.1
2.8
7.0 20
12
40
9.0 20
13
40
45
90
45
90
25
50
37
50
4.0
6.0
330
290
250
210
61
67
Units
V
V/°C
Ω
V
S
µA
Conditions
V
GS
= 0V, I
D
= 250µA
V
GS
= 0V, I
D
= -250µA
Reference to 25°C, I
D
= 1mA
Reference to 25°C, I
D
= -1mA
V
GS
= 10V, I
D
= 1.0A
V
GS
= 4.5V, I
D
= 0.50A
V
GS
= -10V, I
D
= -1.0A
V
GS
= -4.5V, I
D
= -0.50A
V
DS
= V
GS
, I
D
= 250µA
V
DS
= V
GS
, I
D
= -250µA
V
DS
= 15V, I
D
= 3.5A
V
DS
= -15V, I
D
= -3.5A
V
DS
= 20V, V
GS
= 0V
V
DS
= -20V, V
GS
= 0V,
V
DS
= 20V, V
GS
= 0V, T
J
= 55°C
V
DS
= -20V, V
GS
= 0V, T
J
= 55°C
V
GS
= ± 20V
N-Channel
I
D
= 2.3A, V
DS
= 12.5V, V
GS
= 10V
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Total GateCharge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductace
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
nC
P-Channel
I
D
= -2.3A, V
DS
= -12.5V, V
GS
= -10V
N-Channel
V
DD
= 25V, I
D
= 1.0A, R
G
= 6.0Ω,
R
D
= 25Ω
P-Channel
V
DD
= -25V, I
D
= -1.0A, R
G
= 6.0Ω,
R
D
= 25Ω
Between lead , 6mm (0.25in.)from
package and center of die contact
N-Channel
V
GS
= 0V, V
DS
= 15V, = 1.0MHz
P-Channel
V
GS
= 0V, V
DS
= -15V, = 1.0MHz
ns
nH
pF
Source-Drain Ratings and Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-P
Min. Typ. Max. Units
Conditions
2.0
-2.0
A
14
-9.2
1.2
T
J
= 25°C, I
S
= 1.3A, V
GS
= 0V
V
-1.2
T
J
= 25°C, I
S
= -1.3A, V
GS
= 0V
36
54
N-Channel
ns
69 100
T
J
= 25°C, I
F
= 1.3A, di/dt = 100A/µs
41
75
P-Channel
nC
T
J
= 25°C, I
F
= -1.3A, di/dt = 100A/µs
90 180
Intrinsic turn-on time is neglegible (turn-on is dominated by L
S
+L
D
)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Pulse width
≤
300µs; duty cycle
≤
2%.
Surface mounted on FR-4 board, t
≤
10sec.
N-Channel I
SD
≤
3.5A, di/dt
≤
90A/µs, V
DD
≤
V
(BR)DSS
, T
J
≤
150°C
P-Channel I
SD
≤
-2.3A, di/dt
≤
90A/µs, V
DD
≤
V
(BR)DSS
, T
J
≤
150°C
2
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N-Channel
I
D
, Drain-to-Source Current ( A )
IRF7105
I
D
, Drain-to-Source Current ( A )
V
DS
, Drain-to-Source Voltage ( V )
V
DS
, Drain-to-Source Voltage ( V )
Fig 1.
Typical Output Characteristics
I
D
, Drain-to-Source Current ( A )
Fig 2.
Typical Output Characteristics
R
DS (on)
, Drain-to-Source On Resistance
V
GS
, Gate-to-Source Voltage ( V )
( Normalized)
T
J
, Junction Temperature ( °C )
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
V
GS
, Gate-to-Source Voltage ( V )
C , Capacitance ( pF )
V
DS
, Drain-to-Source Voltage ( V )
Q
G
, Total Gate Charge ( nC )
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
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Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
3
IRF7105
I
SD
, Reverse Drain Current ( A )
N-Channel
I
D
, Drain Current ( A )
V
SD
, Source-to-Drain Voltage ( V )
V
DS
, Drain-to-Source Voltage ( V )
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
V
DS
R
D
I
D
, Drain Current ( A )
V
GS
R
G
10V
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
D.U.T.
+
V
-
DD
Fig 10a.
Switching Time Test Circuit
T
A
, Ambient Temperature ( °C )
V
DS
90%
Fig 9.
Maximum Drain Current Vs.
Ambient Temperature
Current Regulator
Same Type as D.U.T.
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
50KΩ
12V
.2µF
.3µF
Fig 10b.
Switching Time Waveforms
D.U.T.
+
V
-
DS
10V
Q
GS
Q
G
Q
GD
V
GS
3mA
V
G
I
G
I
D
Charge
Current Sampling Resistors
Fig 11a.
Gate Charge Test Circuit
4
Fig 11b.
Basic Gate Charge Waveform
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P-Channel
IRF7105
-I
D
, Drain-to-Source Current ( A )
-I
D
, Drain-to-Source Current ( A )
-V
DS
, Drain-to-Source Voltage ( V )
-V
DS
, Drain-to-Source Voltage ( V )
Fig 12.
Typical Output Characteristics
-I
D
, Drain-to-Source Current ( A )
Fig 13.
Typical Output Characteristics
R
DS (on)
, Drain-to-Source On Resistance
-V
GS
, Gate-to-Source Voltage ( V )
( Normalized)
T
J
, Junction Temperature ( °C )
Fig 14.
Typical Transfer Characteristics
Fig 15.
Normalized On-Resistance
Vs. Temperature
-V
GS
, Gate-to-Source Voltage ( V )
C , Capacitance ( pF )
-V
DS
, Drain-to-Source Voltage ( V )
Q
G
, Total Gate Charge ( nC )
Fig 16.
Typical Capacitance Vs.
Drain-to-Source Voltage
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Fig 17.
Typical Gate Charge Vs.
Gate-to-Source Voltage
5
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