IRF230: 产品描述Power Field-Effect Transistor, 9A I(D), 200V, 0.49ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN; 产品类别分立半导体晶体管; 文件大小147KB，共7页; 制造商Infineon(英飞凌); 官网地址http://www.infineon.com/

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供应商	器件名称	价格	最低购买	库存
	IRF230	-	-	点击查看	点击购买

IRF230概述

Power Field-Effect Transistor, 9A I(D), 200V, 0.49ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN

IRF230规格参数

参数名称	属性值
是否Rohs认证	不符合
厂商名称	Infineon(英飞凌)
包装说明	TO-3, 2 PIN
Reach Compliance Code	unknown
ECCN代码	EAR99
雪崩能效等级（Eas）	54 mJ
外壳连接	DRAIN
配置	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压	200 V
最大漏极电流 (Abs) (ID)	9 A
最大漏极电流 (ID)	9 A
最大漏源导通电阻	0.49 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码	TO-204AA
JESD-30 代码	O-MBFM-P2
JESD-609代码	e0
元件数量	1
端子数量	2
工作模式	ENHANCEMENT MODE
最高工作温度	150 °C
封装主体材料	METAL
封装形状	ROUND
封装形式	FLANGE MOUNT
峰值回流温度（摄氏度）	NOT SPECIFIED
极性/信道类型	N-CHANNEL
最大功率耗散 (Abs)	75 W
最大脉冲漏极电流 (IDM)	36 A
认证状态	Not Qualified
表面贴装	NO
端子面层	Tin/Lead (Sn/Pb)
端子形式	PIN/PEG
端子位置	BOTTOM
处于峰值回流温度下的最长时间	NOT SPECIFIED
晶体管应用	SWITCHING
晶体管元件材料	SILICON

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PD - 90334F

IRF230

REPETITIVE A ALANCHE AND dv/dt RATED

JANTX2N6758



HEXFET TRANSISTORS

JANTXV2N6758

THRU-HOLE (TO-204AA/AE)

[REF:MIL-PRF-19500/542]

200V, N-CHANNEL

Product Summary

Part Number

IRF230

VDSS

200V

DS(on)

0.40Ω

9.0A

The HEXFET technology is the key to International

Rectifier’s advanced line of power MOSFET transistors.

The efficient geometry and unique processing of this latest

“State of the Art” design achieves: very low on-state resis-

tance combined with high transconductance; superior re-

verse energy and diode recovery dv/dt capability.

The HEXFET transistors also feature all of the well estab-

lished advantages of MOSFETs such as voltage control,

very fast switching, ease of paralleling and temperature

stability of the electrical parameters.

They are well suited for applications such as switching

power supplies, motor controls, inverters, choppers, audio

amplifiers and high energy pulse circuits.



TO-3

Features:

Repetitive Avalanche Ratings

Dynamic dv/dt Rating

Hermetically Sealed

Simple Drive Requirements

Ease of Paralleling

Absolute Maximum Ratings

Parameter

ID @ VGS = 10V, TC = 25°C

ID @ VGS = 10V, TC = 100°C

I DM

PD @ TC = 25°C

VGS

EAS

IAR

EAR

dv/dt

T STG

Continuous Drain Current

Pulsed Drain Current

➀

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy

➁

Avalanche Current

➀

Repetitive Avalanche Energy

➀

Peak Diode Recovery dv/dt

➂

Operating Junction

Storage Temperature Range

Lead Temperature

Weight

For footnotes refer to the last page

9.0

6.0

0.6

±20

9.0

7.5

5.0

-55 to 150

Units

W/°C

V/ns

300 (0.063 in. (1.6mm) from case for 10s)

11.5(typical)

www.irf.com

01/24/01

IRF230相似产品对比

	IRF230	2N6758	IRF230PBF
描述	Power Field-Effect Transistor, 9A I(D), 200V, 0.49ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN	Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA,	Power Field-Effect Transistor, 9A I(D), 200V, 0.49ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN
是否Rohs认证	不符合	不符合	符合
Reach Compliance Code	unknown	compli	compliant
雪崩能效等级（Eas）	54 mJ	54 mJ	54 mJ
外壳连接	DRAIN	DRAIN	DRAIN
配置	SINGLE WITH BUILT-IN DIODE	SINGLE	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压	200 V	200 V	200 V
最大漏极电流 (ID)	9 A	9 A	9 A
最大漏源导通电阻	0.49 Ω	0.4 Ω	0.49 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码	TO-204AA	TO-204AA	TO-204AA
JESD-30 代码	O-MBFM-P2	O-MBFM-P2	O-MBFM-P2
元件数量	1	1	1
端子数量	2	2	2
工作模式	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
最高工作温度	150 °C	150 °C	150 °C
封装主体材料	METAL	METAL	METAL
封装形状	ROUND	ROUND	ROUND
封装形式	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
峰值回流温度（摄氏度）	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
极性/信道类型	N-CHANNEL	N-CHANNEL	N-CHANNEL
最大脉冲漏极电流 (IDM)	36 A	36 A	36 A
表面贴装	NO	NO	NO
端子形式	PIN/PEG	PIN/PEG	PIN/PEG
端子位置	BOTTOM	BOTTOM	BOTTOM
处于峰值回流温度下的最长时间	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
晶体管应用	SWITCHING	SWITCHING	SWITCHING
晶体管元件材料	SILICON	SILICON	SILICON
厂商名称	Infineon(英飞凌)	-	Infineon(英飞凌)
包装说明	TO-3, 2 PIN	-	FLANGE MOUNT, O-MBFM-P2
ECCN代码	EAR99	EAR99	-
最大漏极电流 (Abs) (ID)	9 A	9 A	-
JESD-609代码	e0	e0	-
最大功率耗散 (Abs)	75 W	75 W	-
认证状态	Not Qualified	Not Qualified	-
端子面层	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	-

IRF230

IRF230在线购买

IRF230概述

IRF230规格参数

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