Datasheet> 器件分类 > 分立半导体> 晶体管> IRFF220R1

文档预览

IRFF220R1: 产品描述3.5A, 200V, 0.92ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN; 产品类别分立半导体晶体管; 文件大小39KB，共2页; 制造商SEMELAB; 标准

下载文档详细参数选型对比全文预览

IRFF220R1概述

3.5A, 200V, 0.92ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN

IRFF220R1规格参数

参数名称	属性值
是否无铅	不含铅
是否Rohs认证	符合
厂商名称	SEMELAB
零件包装代码	BCY
包装说明	CYLINDRICAL, O-MBCY-W3
针数	2
Reach Compliance Code	compliant
ECCN代码	EAR99
外壳连接	DRAIN
配置	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压	200 V
最大漏极电流 (ID)	3.5 A
最大漏源导通电阻	0.92 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码	TO-205AF
JESD-30 代码	O-MBCY-W3
JESD-609代码	e1
元件数量	1
端子数量	3
工作模式	ENHANCEMENT MODE
最高工作温度	150 °C
封装主体材料	METAL
封装形状	ROUND
封装形式	CYLINDRICAL
峰值回流温度（摄氏度）	NOT SPECIFIED
极性/信道类型	N-CHANNEL
最大脉冲漏极电流 (IDM)	14 A
认证状态	Not Qualified
表面贴装	NO
端子面层	TIN SILVER COPPER
端子形式	WIRE
端子位置	BOTTOM
处于峰值回流温度下的最长时间	NOT SPECIFIED
晶体管应用	SWITCHING
晶体管元件材料	SILICON

文档预览

下载PDF文档

全文
预览

2N6790

IRFF220

MECHANICAL DATA

Dimensions in mm (inches)

8.64 (0.34)

9.40 (0.37)

8.01 (0.315)

9.01 (0.355)

N–CHANNEL

POWER MOSFET

ENHANCEMENT MODE

4.06 (0.16)

4.57 (0.18)

12.70

(0.500)

min.

0.89 max.

(0.035)

0.41 (0.016)

0.53 (0.021)

dia.

FEATURES

• REPETITIVE AVALANCHE RATING

• SIMPLE DRIVE REQUIREMENTS

5.08 (0.200)

typ.

• HERMETICALLY SEALED

2.54

(0.100)

0.74 (0.029)

1.14 (0.045)

0.71 (0.028)

0.53 (0.021)

APPLICATIONS

• FAST SWITCHING

45°

• MOTOR CONTROLS

• POWER SUPPLIES

Pin 3 - Drain and Case

TO39 Package (TO-205AF)

Pin 1 - Source

Underside View

Pin 2 - Gate

ABSOLUTE MAXIMUM RATINGS

case

= 25°C unless otherwise stated)

@Tcase = 25°C

@Tcase = 100°C

@ T

case

= 25°C

θJ-C

θJ-A

stg

Lead Temperature

Drain Source Voltage

Continuous Drain Current

Pulsed Drain Current 1

Gate Source Voltage

Maximum Power Dissipation

Thermal Resistance Junction To Case

Thermal Resistance Junction To Ambient

Operating and Storage Temperature Range

( 1.6mm from case for 10 secs)

200V

3.5A

2.25A

14A

±20V

20W

6.25°C/W

175°C/W

-55 to +150°C

300°C

Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed

to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.

Semelab encourages customers to verify that datasheets are current before placing orders.

Semelab plc.

Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

E-mail:

sales@semelab.co.uk

Website:

http://www.semelab.co.uk

Document Number 6445

Issue 1

IRFF220R1相似产品对比

	IRFF220R1	2N6790.MOD	2N6790R1	IRFF220-JQR-B
描述	3.5A, 200V, 0.92ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN	3.5A, 200V, 0.92ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN	3.5A, 200V, 0.92ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN	3.5A, 200V, 0.92ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN
是否无铅	不含铅	含铅	不含铅	含铅
是否Rohs认证	符合	不符合	符合	不符合
零件包装代码	BCY	BCY	BCY	BCY
包装说明	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3
针数	2	2	2	2
Reach Compliance Code	compliant	compliant	compliant	compliant
ECCN代码	EAR99	EAR99	EAR99	EAR99
外壳连接	DRAIN	DRAIN	DRAIN	DRAIN
配置	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压	200 V	200 V	200 V	200 V
最大漏极电流 (ID)	3.5 A	3.5 A	3.5 A	3.5 A
最大漏源导通电阻	0.92 Ω	0.92 Ω	0.92 Ω	0.92 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码	TO-205AF	TO-205AF	TO-205AF	TO-205AF
JESD-30 代码	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3
元件数量	1	1	1	1
端子数量	3	3	3	3
工作模式	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
最高工作温度	150 °C	150 °C	150 °C	150 °C
封装主体材料	METAL	METAL	METAL	METAL
封装形状	ROUND	ROUND	ROUND	ROUND
封装形式	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
峰值回流温度（摄氏度）	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
极性/信道类型	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
最大脉冲漏极电流 (IDM)	14 A	14 A	14 A	14 A
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified
表面贴装	NO	NO	NO	NO
端子形式	WIRE	WIRE	WIRE	WIRE
端子位置	BOTTOM	BOTTOM	BOTTOM	BOTTOM
处于峰值回流温度下的最长时间	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
晶体管应用	SWITCHING	SWITCHING	SWITCHING	SWITCHING
晶体管元件材料	SILICON	SILICON	SILICON	SILICON

IRFF220R1

IRFF220R1概述

IRFF220R1规格参数

文档预览

IRFF220R1相似产品对比

推荐资源