IRFF420: 产品描述Power Field-Effect Transistor, 1.6A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205; 产品类别分立半导体晶体管; 文件大小136KB，共3页; 制造商Vishay(威世); 官网地址http://www.vishay.com

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IRFF420概述

Power Field-Effect Transistor, 1.6A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205

IRFF420规格参数

参数名称	属性值
厂商名称	Vishay(威世)
包装说明	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code	unknown
配置	SINGLE
最小漏源击穿电压	500 V
最大漏极电流 (ID)	1.6 A
最大漏源导通电阻	3 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码	TO-205
JESD-30 代码	O-MBCY-W3
元件数量	1
端子数量	3
工作模式	ENHANCEMENT MODE
封装主体材料	METAL
封装形状	ROUND
封装形式	CYLINDRICAL
极性/信道类型	N-CHANNEL
认证状态	Not Qualified
表面贴装	NO
端子形式	WIRE
端子位置	BOTTOM
晶体管元件材料	SILICON

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IRFF420相似产品对比

	IRFF420	IRFF421	IRFF422	IRFF423	IRF712	IRFF220-2	IRFF9230-2
描述	Power Field-Effect Transistor, 1.6A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET	Power Field-Effect Transistor, 1.4A I(D), 500V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205	Power Field-Effect Transistor, 1.4A I(D), 400V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205	Power Field-Effect Transistor, 1.3A I(D), 400V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN	TRANSISTOR 3.5 A, 200 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205, FET General Purpose Power	TRANSISTOR 4 A, 200 V, 0.8 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205, FET General Purpose Power
包装说明	CYLINDRICAL, O-MBCY-W3	,	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	,	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown
厂商名称	Vishay(威世)	Vishay(威世)	-	-	Vishay(威世)	Vishay(威世)	Vishay(威世)
配置	SINGLE	Single	SINGLE	SINGLE	-	SINGLE	SINGLE
最小漏源击穿电压	500 V	-	500 V	400 V	-	200 V	200 V
最大漏极电流 (ID)	1.6 A	-	1.4 A	1.4 A	-	3.5 A	4 A
最大漏源导通电阻	3 Ω	-	4 Ω	4 Ω	-	0.8 Ω	0.8 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	-	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码	TO-205	-	TO-205	TO-205	-	TO-205	TO-205
JESD-30 代码	O-MBCY-W3	-	O-MBCY-W3	O-MBCY-W3	-	O-MBCY-W3	O-MBCY-W3
元件数量	1	-	1	1	-	1	1
端子数量	3	-	3	3	-	3	3
工作模式	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	-	ENHANCEMENT MODE	ENHANCEMENT MODE
封装主体材料	METAL	-	METAL	METAL	-	METAL	METAL
封装形状	ROUND	-	ROUND	ROUND	-	ROUND	ROUND
封装形式	CYLINDRICAL	-	CYLINDRICAL	CYLINDRICAL	-	CYLINDRICAL	CYLINDRICAL
极性/信道类型	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	-	N-CHANNEL	P-CHANNEL
认证状态	Not Qualified	-	Not Qualified	Not Qualified	-	Not Qualified	Not Qualified
表面贴装	NO	NO	NO	NO	-	NO	NO
端子形式	WIRE	-	WIRE	WIRE	-	WIRE	WIRE
端子位置	BOTTOM	-	BOTTOM	BOTTOM	-	BOTTOM	BOTTOM
晶体管元件材料	SILICON	-	SILICON	SILICON	-	SILICON	SILICON

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