PD - 94603
HEXFET
®
POWER MOSFET
THRU-HOLE (Low-ohmic TO-257AA)
IRF7YSZ44VCM
60V, N-CHANNEL
Product Summary
Part Number
IRF7YSZ44VCM
BVDSS
60V
R
DS(on)
I
D
0.0195Ω 20A*
Seventh Generation HEXFET
®
power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance
per silicon unit area. This benefit, combined with the
fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient device
for use in a wide variety of applications.
These devices are well-suited for applications such
as switching power supplies, motor controls, invert-
ers, choppers, audio amplifiers and high-energy pulse
circuits.
Low Ohmic
TO-257AA
Features:
n
n
n
n
n
n
n
Low R
DS(on)
Avalanche Energy Ratings
Dynamic dv/dt Rating
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 10V, TC = 25°C
ID @ VGS = 10V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
➀
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
➁
Avalanche Current
➀
Repetitive Avalanche Energy
➀
Peak Diode Recovery dv/dt
➂
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
* Current is limited by package
For footnotes refer to the last page
300 (0.063in./1.6mm from case for 10s)
4.3 (Typical)
20*
20*
80
50
0.4
±20
71
20
5.0
1.6
-55 to 150
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
o
C
g
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1
02/07/03
IRF7YSZ44VCM
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
∆BV
DSS/∆T J Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
g fs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min
60
—
—
2.0
17
—
—
—
—
—
—
—
—
—
—
—
—
Typ Max Units
—
0.064
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.8
—
—
0.0195
4.0
—
25
250
100
-100
50
18
25
20
120
60
90
—
V
V/°C
Ω
V
S( )
µA
Ω
Test Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 250
µ
A
VGS = 10V, ID = 20A
➃
VDS = VGS, ID = 250µA
VDS =15V, IDS = 20A
➃
VDS = 60V ,VGS=0V
VDS = 48V,
VGS = 0V, TJ=125°C
VGS = 20V
VGS = -20V
VGS =10V, ID = 20A
VDS = 48V
VDD = 30V, ID = 20A,
VGS = 10V, RG = 9.1Ω
IGSS
IGSS
Qg
Q gs
Q gd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
nA
nC
ns
nH
l Ciss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
1730
375
60
—
—
—
pF
Measured from drain lead (6mm/
0.25in. from package ) to source
lead (6mm/0.25in. from pacakge
VGS = 0V, VDS = 25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
IS
ISM
VSD
trr
QRR
ton
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
➀
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min Typ Max Units
—
—
—
—
—
—
—
—
—
—
20*
80
1.2
105
220
Test Conditions
A
V
ns
nC
T
j
= 25°C, IS = 20A, VGS = 0V
➃
Tj = 25°C, IF = 20A, di/dt
≤
100A/µs
VDD
≤
25V
➃
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
* Current is limited by package
Thermal Resistance
Parameter
RthJC
Junction-to-Case
Min Typ Max
—
—
2.5
Units
°C/W
Test Conditions
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
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IRF7YSZ44VCM
1000
ID, Drain-to-Source Current (A)
100
10
4.5V
1
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
ID, Drain-to-Source Current (A)
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
1000
100
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
10
4.5V
20
µ
s PULSE WIDTH
Tj = 25°C
20
µ
s PULSE WIDTH
Tj = 150°C
1
0.1
1
10
100.0
VDS , Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
2.5
TJ = 150°C
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= 20A
ID , Drain-to-Source Current (
Α
)
2.0
TJ = 25°C
10
1.5
1.0
VDS = 25V
20
µ
s
15
PULSE WIDTH
1.0
4
4.5
5
5.5
6
6.5
7
7.5
8
VGS, Gate-to-Source Voltage (V)
0.5
0.0
-60 -40 -20
V
GS
= 10V
0
20
40
60
80 100 120 140 160
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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3
IRF7YSZ44VCM
3000
VGS = 0V, f = 1 MHZ
Ciss = C + C , C SHORTED
gs gd ds
12
ID = 20A
VDS = 48V
VDS = 30V
VDS= 12V
8
2000
Ciss
1500
VGS, Gate-to-Source Voltage (V)
100
2500
Crss = C
gd
Coss = C + C
ds gd
C, Capacitance (pF)
1000
Coss
4
500
Crss
0
1
10
0
0
5
10
15
20
25
30
35
40
VDS, Drain-to-Source Voltage (V)
QG Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
ISD , Reverse Drain Current (
Α
)
T J = 150°C
T J = 25°C
10
ID , Drain-to-Source Current (A)
100
10
100µs
1ms
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1
10
1
0ms
VGS = 0V
1.0
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD , Source-to-Drain Voltage (V)
100
1000
VDS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRF7YSZ44VCM
40
LIMITED BY PACKAGE
30
V
DS
V
GS
R
G
R
D
D.U.T.
+
I
D
, Drain Current (A)
-
V
DD
V
GS
20
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
10
Fig 10a.
Switching Time Test Circuit
V
DS
90%
0
25
50
75
100
125
150
T
C
, Case Temperature ( °C)
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 9.
Maximum Drain Current Vs.
Case Temperature
Fig 10b.
Switching Time Waveforms
10
Thermal Response (Z
thJC
)
D = 0.50
1
0.20
0.10
0.05
0.1
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
0.01
0.00001
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.1
0.0001
0.001
0.01
1
P
DM
t
1
t
2
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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