PD - 90710B
POWER MOSFET
THRU-HOLE (TO-254AA)
Product Summary
Part Number
IRFMG40
IRFMG40
1000V, N-CHANNEL
HEXFET
MOSFET TECHNOLOGY
®
R
DS(on)
3.5Ω
I
D
3.9A
HEXFET
®
MOSFET technology is the key to International
Rectifier’s advanced line of power MOSFET transistors. The
efficient geometry design achieves very low on-state re-
sistance combined with high transconductance.
HEXFET
transistors also feature all of the well-established advan-
tages of MOSFETs, such as voltage control, very fast switch-
ing, ease of paralleling and electrical parameter temperature
stability. They are well-suited for applications such as switch-
ing power supplies, motor controls, inverters, choppers,
audio amplifiers, high energy pulse circuits, and virtually
any application where high reliability is required. The
HEXFET
transistor’s totally isolated package eliminates the
need for additional isolating material between the device
and the heatsink. This improves thermal efficiency and
reduces drain capacitance.
TO-254AA
Features:
n
n
n
n
n
n
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Electrically Isolated
Dynamic dv/dt Rating
Light-weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 10V, TC = 25°C
ID @ VGS = 10V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
➀
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
➁
Avalanche Current
➀
Repetitive Avalanche Energy
➀
Peak Diode Recovery dv/dt
➂
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
For footnotes refer to the last page
3.9
2.5
16
125
1.0
±20
530
3.9
12.5
1.0
-55 to 150
o
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
C
300(0.063in./1.6mm from case for 10 sec)
9.3 (Typical)
g
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1
2/11/02
IRFMG40
Electrical Characteristics
Parameter
@ Tj = 25°C (Unless Otherwise Specified)
Min
Typ Max Units
—
1.4
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.8
—
—
3.5
4.2
4.0
—
25
250
100
-100
120
12
75
30
50
170
50
—
V
V/°C
Ω
V
S( )
µA
Ω
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
VGS = 10V, ID = 2.5A
➃
VGS = 10V, ID = 3.9A
VDS = VGS, ID = 250µA
VDS > 15V, IDS = 2.5A
➃
VDS= 800V ,VGS=0V
VDS = 800V,
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =10V, ID =3.9A
VDS = 400V
|
VDD = 400V, ID = 3.9A,
VGS =10V,RG = 9.1Ω
|
BVDSS
Drain-to-Source Breakdown Voltage
1000
∆BV
DSS/∆T J Temperature Coefficient of Breakdown —
Voltage
RDS(on)
Static Drain-to-Source On-State
—
Resistance
—
VGS(th)
Gate Threshold Voltage
2.0
gfs
Forward Transconductance
3.3
IDSS
Zero Gate Voltage Drain Current
—
—
IGSS
IGSS
Qg
Q gs
Q gd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
nA
nC
ns
nH
Measured from Drain lead (6mm /
0.25in. from package) to Source lead
(6mm /0.25in. from package)
VGS = 0V, VDS = 25V
f = 1.0MHz
Ciss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
1700
250
100
—
—
—
pF
Source-Drain Diode Ratings and Characteristics
Parameter
IS
ISM
VSD
t rr
Q RR
ton
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
➀
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min Typ Max Units
—
—
—
—
—
—
—
—
—
—
3.9
16
1.8
1000
5.6
Test Conditions
A
V
nS
µC
T
j
= 25°C, IS = 3.9A, VGS = 0V
➃
Tj = 25°C, IF = 3.9A, di/dt
≤
100A/µs
VDD
≤
50V
➃
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthCS
RthJA
Junction-to-Case
Case-to-sink
Junction-to-Ambient
Min Typ Max Units
—
—
—
—
0.21
—
1.0
—
48
°C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
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IRFMG40
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
3.9A
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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3
IRFMG40
ID =3.9A
13a & b
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRFMG40
V
DS
V
GS
R
G
R
D
D.U.T.
+
-
V
DD
10V
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
Fig 10a.
Switching Time Test Circuit
V
DS
90%
10%
V
GS
Fig 9.
Maximum Drain Current Vs.
Case Temperature
t
d(on)
t
r
t
d(off)
t
f
Fig 10b.
Switching Time Waveforms
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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