Datasheet> 器件分类 > 分立半导体> 晶体管> IRFM054UPBF

IRFM054UPBF: 产品描述Power Field-Effect Transistor, 35A I(D), 60V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA; 产品类别分立半导体晶体管; 文件大小516KB，共7页; 制造商International Rectifier （ Infineon ）; 官网地址http://www.irf.com/; 标准

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IRFM054UPBF概述

Power Field-Effect Transistor, 35A I(D), 60V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA

IRFM054UPBF规格参数

参数名称	属性值
是否无铅	不含铅
是否Rohs认证	符合
厂商名称	International Rectifier （ Infineon ）
包装说明	FLANGE MOUNT, R-MSFM-P3
Reach Compliance Code	compliant
ECCN代码	EAR99
雪崩能效等级（Eas）	480 mJ
外壳连接	ISOLATED
配置	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压	60 V
最大漏极电流 (ID)	35 A
最大漏源导通电阻	0.027 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码	TO-254AA
JESD-30 代码	R-MSFM-P3
元件数量	1
端子数量	3
工作模式	ENHANCEMENT MODE
最高工作温度	150 °C
封装主体材料	METAL
封装形状	RECTANGULAR
封装形式	FLANGE MOUNT
峰值回流温度（摄氏度）	260
极性/信道类型	N-CHANNEL
功耗环境最大值	150 W
最大脉冲漏极电流 (IDM)	220 A
认证状态	Not Qualified
表面贴装	NO
端子形式	PIN/PEG
端子位置	SINGLE
处于峰值回流温度下的最长时间	40
晶体管应用	SWITCHING
晶体管元件材料	SILICON
最大关闭时间（toff）	200 ns
最大开启时间（吨）	213 ns

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PD-90709C

IRFM054

POWER MOSFET

THRU-HOLE (TO-254AA)

Product Summary

Part Number

IRFM054

DS(on)

0.027

35A*

60V, N-CHANNEL

HEXFET

MOSFET TECHNOLOGY

Description

HEXFET MOSFET technology is the key to IR HiRel

advanced line of power MOSFET transistors. The efficient

geometry design achieves very low on-state resistance

combined with high trans conductance. HEXFET transistors

also feature all of the well-established advantages of

MOSFETs, such as voltage control, very fast switching,

ease of paralleling and electrical parameter temperature

stability. They are well-suited for applications such as

switching power supplies, motor controls, inverters,

choppers, audio amplifiers, high energy pulse circuits, and

virtually any application where high reliability is required.

The HEXFET transistor’s totally isolated package

eliminates the need for additional isolating material

between the device and the heat sink. This improves

thermal efficiency and reduces drain capacitance.

TO-254AA

Features



Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Electrically Isolated

Dynamic dv/dt Rating

Light Weight

Absolute Maximum Ratings

Parameter

@ V

= 10V, T

= 25°C

dv/dt

STG

Continuous Drain Current

Pulsed Drain Current



Maximum Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy



Avalanche Current



Repetitive Avalanche Energy



Peak Diode Recovery dv/dt



Operating Junction and

Storage Temperature Range

Lead Temperature

Weight

* Current is limited by package

For Footnotes refer to the page 2.

2016-06-21

300 (0.063 in. /1.6 mm from case for 10s)

9.3 (Typical)

35*

220

150

1.2

± 20

480

4.5

-55 to + 150

°C

W/°C

V/ns

@ V

= 10V, T

= 100°C Continuous Drain Current

Units

IRFM054UPBF相似产品对比

	IRFM054UPBF	IRFM054PBF	IRFM054DPBF
描述	Power Field-Effect Transistor, 35A I(D), 60V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA	Power Field-Effect Transistor, 35A I(D), 60V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254AA, 3 PIN	Power Field-Effect Transistor, 35A I(D), 60V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA
是否无铅	不含铅	不含铅	不含铅
是否Rohs认证	符合	符合	符合
厂商名称	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）
包装说明	FLANGE MOUNT, R-MSFM-P3	FLANGE MOUNT, S-MSFM-P3	FLANGE MOUNT, R-MSFM-P3
Reach Compliance Code	compliant	compliant	compliant
ECCN代码	EAR99	EAR99	EAR99
雪崩能效等级（Eas）	480 mJ	480 mJ	480 mJ
外壳连接	ISOLATED	ISOLATED	ISOLATED
配置	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压	60 V	60 V	60 V
最大漏极电流 (ID)	35 A	35 A	35 A
最大漏源导通电阻	0.027 Ω	0.027 Ω	0.027 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码	TO-254AA	TO-254AA	TO-254AA
JESD-30 代码	R-MSFM-P3	S-MSFM-P3	R-MSFM-P3
元件数量	1	1	1
端子数量	3	3	3
工作模式	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
最高工作温度	150 °C	150 °C	150 °C
封装主体材料	METAL	METAL	METAL
封装形状	RECTANGULAR	SQUARE	RECTANGULAR
封装形式	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
峰值回流温度（摄氏度）	260	260	260
极性/信道类型	N-CHANNEL	N-CHANNEL	N-CHANNEL
功耗环境最大值	150 W	150 W	150 W
最大脉冲漏极电流 (IDM)	220 A	220 A	220 A
认证状态	Not Qualified	Not Qualified	Not Qualified
表面贴装	NO	NO	NO
端子形式	PIN/PEG	PIN/PEG	PIN/PEG
端子位置	SINGLE	SINGLE	SINGLE
处于峰值回流温度下的最长时间	40	40	40
晶体管应用	SWITCHING	SWITCHING	SWITCHING
晶体管元件材料	SILICON	SILICON	SILICON
最大关闭时间（toff）	200 ns	200 ns	200 ns
最大开启时间（吨）	213 ns	213 ns	213 ns

IRFM054UPBF

IRFM054UPBF概述

IRFM054UPBF规格参数

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