CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
PARAMETER
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
DSS
V
GS(TH)
I
DSS
I
D(ON)
I
GSS
r
DS(ON)
g
fs
t
D(ON)
t
r
t
D(OFF)
t
f
Q
g
Q
gs
Q
gd
C
ISS
C
OSS
C
RSS
L
D
Measured between the
Contact Screw on Header
that is Closer to Source
and Gate Pins and Center
of Die
Measured from the
Source Lead, 6mm
(0.25in) from Header to
Source Bonding Pad
Modified MOSFET
Symbol Showing the
Internal Devices
Inductances
D
L
D
G
L
S
S
TEST CONDITIONS
V
GS
= 0V, I
D
= 250µA (Figure 10)
V
GS
= V
DS
, I
D
= 250µA
V
DS
= Rated BV
DSS
, V
GS
= 0V
V
DS
= 0.8 x Rated BV
DSS
, V
GS
= 0V, T
J
= 125
o
C
V
DS
> I
D(ON) x
r
DS(ON)MAX
, V
GS
= 10V
V
GS
=
±20V
V
GS
= 10V, I
D
= 10A (Figures 8, 9)
V
DS
= 10V, I
D
= 11V (Figure 12)
V
DD
= 100V, I
D
≈
18A, R
G
= 9.1Ω, R
L
= 5.3Ω
(Figures 17, 18) MOSFET Switching Times are
Essentially Independent of Operating Temperature
MIN
200
2.0
-
-
18
-
-
6.7
-
-
-
-
TYP
-
-
-
-
-
-
0.14
9.0
16
27
40
31
43
8
27
1275
500
160
5.0
MAX
-
4.0
25
250
-
±100
0.180
-
30
60
80
60
60
-
-
-
-
-
-
UNITS
V
V
µA
µA
A
nA
Ω
S
ns
ns
ns
ns
nC
nC
nC
pF
pF
pF
nH
Drain to Source Breakdown Voltage
Gate to Threshold Voltage
Zero Gate Voltage Drain Current
On-State Drain Current (Note 2)
Gate to Source Leakage
Drain to Source On Resistance
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain “Miller” Charge
Input Capacitance
Output Capacitance
Reverse-Transfer Capacitance
Internal Drain Inductance
V
GS
= 10V, I
D
= 18A, V
DS
= 0.8 x Rated BV
DSS
,
I
g(REF)
= 1.5mA (Figures 14, 19, 20) Gate Charge is
Essentially Independent of Operating Temperature
-
-
-
V
GS
= 0V, V
DS
= 25V, f = 1.0MHz (Figure 11)
-
-
-
-
Internal Source Inductance
L
S
-
12.5
-
nH
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
R
θJC
R
θJA
Free Air Operation
-
-
-
-
1.0
30
o
C/W
o
C/W
2
IRF240
Source to Drain Diode Specifications
PARAMETER
Continuous Source to Drain Current
Pulse Source to Drain Current
(Note 3)
SYMBOL
I
SD
I
SM
TEST CONDITIONS
Modified MOSFET
Symbol Showing the
Integral Reverse P-N
Junction Diode
G
D
MIN
-
-
TYP
-
-
MAX
18
72
UNITS
A
A
S
Source to Drain Diode Voltage (Note 2)
Reverse Recovery Time
Reverse Recovered Charge
NOTES:
V
SD
t
rr
Q
RR
T
J
= 25
o
C, I
SD
= 18A, V
GS
= 0V (Figure 13)
T
J
= 150
o
C, I
SD
= 18A, dI
SD
/dt = 100A/µs
T
J
= 150
o
C, I
SD
= 18A, dI
SD
/dt = 100A/µs
-
-
-
-
650
4.1
2.0
-
-
V
ns
µC
2. Pulse Test: Pulse width
≤
300µs, duty cycle
≤
2%.
3. Repetitive Rating: Pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. V
DD
= 50V, starting T
J
= 25
o
C, L = 2.7mH, R
G
= 25Ω, peak I
AS
= 9A. See Figures 15 and 16.
Typical Performance Curves
1.2
POWER DISSIPATION MULTIPLIER
1.0
Unless Otherwise Specified
20
0.8
0.6
0.4
0.2
0
I
D,
DRAIN CURRENT (A)
16
12
8
4
0
0
50
100
150
25
50
75
100
125
150
T
C
, CASE TEMPERATURE (
o
C)
T
C
, CASE TEMPERATURE (
o
C)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
1.0
Z
θJC
, THERMAL IMPEDANCE
0.5
0.2
0.1
0.1
0.05
0.02
0.01
SINGLE PULSE
P
DM
t
1
t
2
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
2
PER UNIT BASE =
R
θJC
= 1.0
o
CW
T
JM
- T
C
= P
DM
x Z
θJC
(t)
10
-4
10
-3
10
-2
0.1
1
10
0.01
10
-5
t
1
, RECTANGULAR PULSE DURATION (s)
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
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