IRFF230
2N6798
MECHANICAL DATA
Dimensions in mm (inches)
8.64 (0.34)
9.40 (0.37)
8.01 (0.315)
9.01 (0.355)
N-CHANNEL ENHANCEMENT
MODE TRANSISTOR
4.06 (0.16)
4.57 (0.18)
12.70
(0.500)
min.
0.89 max.
(0.035)
0.41 (0.016)
0.53 (0.021)
dia.
FEATURES
5.08 (0.200)
typ.
• V
(BR)DSS
= 200V
• I
D
= 5.5A
Ω
• R
DSON
= 0.40Ω
2
1
0.74 (0.029)
1.14 (0.045)
0.71 (0.028)
0.53 (0.021)
2.54
(0.100)
3
45°
TO–39 PACKAGE (TO-205AF)
Underside View
PIN 1 – Source
PIN 2 – Gate
PIN 3 – Drain
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
Gate–Source Voltage
I
D
Drain Current Continuous T
Case
= 25°C
T
Case
= 100°C
I
DM
Drain Current Pulsed
P
D
Total Device Dissipation @ T
Case
= 25°C
T
Case
= 100°C
T
J
, T
STG
Operating and Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance Junction to Case
R
θJC
R
θJA
Thermal Resistance Junction to Ambient
T
L
Maximum Lead Temperature 1.6mm from Case for
10 secs.
V
DS
V
GS
Drain–Source Voltage
200V
±20V
5.5A
3.5A
22A
25W
10W
–55 to +150°C
5.0°C/W
175°C/W
300°C
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Document Number 3096
Issue 2
IRFF230
2N6798
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise stated)
Parameter
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
r
DS(on)
gfs
C
iss
C
oss
C
rss
t
don
t
r
t
d(of)
t
f
V
SD
I
S
I
SM
t
rr
Q
rr
Drain–Source Breakdown Voltage
Gate Thresshold Voltage
Gate–Body Leakage
Zero Gate Voltage Drain Current
Drain–Source On–Resistance
1
Forward Transconductance
1
Input Capacitance
Output capacitance
Reverse Transfer Capacitance
Turn–On Delay Time
RiseTime
Turn off Delay Time
FallTime
I
D
= 3.5A
Test Conditions
V
GS
= 0
V
DS
=V
GS
V
DS
= 0
V
GS
= 0
V
GS
= 10V
V
DS
= 15V
V
DS
= 25V
I
D
= 1mA
I
D
= 250µA
V
GS
= ±20V
Tj = 125
°
C
I
D
= 3.5A
I
D
= 3.5A
V
GS
= 0
Min.
200
2.0
Typ.
Max. Unit
4.0
±100
25
250
V
nA
µA
Ω
s( )
pF
30
50
50
40
1.4
5.5
22
V
A
ns
µ
C
ns
Ω
V
DS
=0.8 x V
(BR)DSS
0.25
2.5
3.0
600
250
80
8
42
12
30
I
F
= 5.5A
V
GS
= 0
4.0
f = 1.0MH
Z
V
DD
= 77V
RL = 22Ω
V
GEN
= 10V
R
G
= 7.5 ohms
SOURCE DRAIN DIODE RATING CHARACTERISTICS
Diode Forward Voltage
1
Continues Current
Pulsed Current
2
Reverse Recovery Time
Reverse Recovered Charge
I
F
= 5.5A
V
DD
= 50V
150
dI
F
/DT = 100A/µS
500
6
1) Pulse test : Pulse Width < 300µs ,Duty Cycle < 2%
2) Pulse width limited by maximum juction temperature
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Document Number 3096
Issue 2
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
