PD - 93828A
IRHQ7214
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (LCC-28)
Product Summary
Part Number Radiation Level
IRHQ7214
100K Rads (Si)
IRHQ3214
300K Rads (Si)
IRHQ4214
IRHQ8214
600K Rads (Si)
1000K Rads (Si)
R
DS(on)
2.25Ω
2.25Ω
2.25Ω
2.25Ω
I
D
1.6A
1.6A
1.6A
1.6A
250V, QUAD N-CHANNEL
RAD-Hard HEXFET
™
®
MOSFET TECHNOLOGY
LCC-28
International Rectifier’s RAD-Hard
TM
HEXFET
®
MOSFET
technology provides high performance power MOSFETs
for space applications. This technology has over a de-
cade of proven performance and reliability in satellite ap-
plications. These devices have been characterized for
both Total Dose and Single Event Effects (SEE). The com-
bination of low R
DS(on)
and low gate charge reduces the
power losses in switching applications such as DC to DC
converters and motor control. These devices retain all of
the well established advantages of MOSFETs such as
voltage control, fast switching, ease of paralleling and
temperature stability of electrical parameters.
Features:
n
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Low R
DS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Package
Surface Mount
Light Weight
Absolute Maximum Ratings ( Per Die)
Parameter
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
➀
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
➁
Avalanche Current
➀
Repetitive Avalanche Energy
➀
Peak Diode Recovery dv/dt
➂
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
For footnotes refer to the last page
1.6
1.0
6.4
12
0.1
±20
62
1.6
1.2
3.5
-55 to 150
300 (for 5s)
0.89 (Typical)
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
o
C
g
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1
04/22/03
IRHQ7214
Pre-Irradiation
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
(Per Die)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
∆BV
DSS /∆T J Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
g fs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min
250
—
—
—
2.0
0.9
—
—
—
—
—
—
—
—
—
—
—
—
Typ Max Units
—
0.3
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.1
—
—
2.25
4.0
—
25
250
100
-100
19
3.4
7.0
15
7.0
39
42
—
V
V/°C
Ω
V
S( )
µA
Ω
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
VGS = 12V, ID = 1.0A
➃
VDS = VGS, ID = 1.0mA
VDS > 15V, I DS = 1.0A
➃
VDS= 200V, VGS=0V
VDS = 200V,
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS = 12V, ID = 1.6A,
VDS = 125V
VDD = 125V, ID = 1.6A,
VGS = 12V, RG = 7.5Ω
IGSS
IGSS
Qg
Q gs
Q gd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
nA
nC
ns
nH
Measured from the center of
drain pad to center of source pad
VGS = 0V, VDS = 25V
f = 1.0MHz
Ciss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
280
70
18
—
—
—
pF
Source-Drain Diode Ratings and Characteristics (Per Die)
Parameter
IS
ISM
VSD
trr
Q RR
ton
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
➀
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min Typ Max Unit
—
—
—
—
—
—
—
—
—
—
1.6
6.4
1.5
226
900
Test Conditions
A
V
nS
nC
T
j
= 25°C, IS = 1.6A, VGS = 0V
➃
Tj = 25°C, IF = 1.6A, di/dt
≤
100A/µs
VDD
≤
25V
➃
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance (Per Die)
Parameter
RthJC
Junction-to-Case
Min Typ Max Units
—
—
10.4
°C/W
Test Conditions
For footnotes refer to the last page
2
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Pre-Irradiation
Radiation Characteristics
IRHQ7214
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
➄➅
(Per Die)
Parameter
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)
R
DS(on)
V
SD
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
➃
On-State Resistance (TO-39)
Static Drain-to-Source
➃
On-State Resistance (LCC-28)
Diode Forward Voltage
➃
100K Rads(Si)
1
300K to 1000K Rads (Si)
2
Units
V
nA
µA
Ω
Ω
V
Test Conditions
V
GS
= 0V, I
D
= 1.0mA
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= 20V
V
GS
= -20 V
V
DS
= 200V, V
GS
=0V
V
GS
= 12V, I
D
= 1.0A
V
GS
= 12V, I
D
= 1.0A
V
GS
= 0V, I S = 1.6A
Min
250
2.0
—
—
—
—
—
—
Max
—
4.0
100
-100
25
2.205
2.25
1.5
Min
250
1.25
—
—
—
—
—
—
Max
—
4.5
100
-100
25
2.205
2.25
1.5
1. Part numbers IRHQ7214, IRHQ3214 and IRHQ4214
2. Part number IRHQ8214
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area (Per Die)
Ion
Cu
Br
LET
MeV/(mg/cm
2
))
28.0
36.8
Energy
(MeV)
285
305
V
DS
(V)
Range
(µm)
@V
GS
=0V @V
GS
=-5V @V
GS
=-10V @V
GS
=-15V @V
GS
=-20V
43.0
250
250
250
250
250
39.0
250
250
250
225
210
300
250
200
VDS
150
100
50
0
0
-5
-10
VGS
-15
-20
Cu
Br
Fig a.
Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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IRHQ7214
Pre-Irradiation
100
10
I
D
, Drain-to-Source Current (A)
I
D
, Drain-to-Source Current (A)
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
TOP
10
1
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
TOP
5.0V
1
5.0V
0.1
0.1
0.01
0.1
20µs PULSE WIDTH
T = 25 C
J
°
1
10
100
V
DS
, Drain-to-Source Voltage (V)
0.01
0.1
20µs PULSE WIDTH
T = 150 C
J
°
1
10
100
V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
2.5
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= 1.6A
I
D
, Drain-to-Source Current (A)
T
J
= 25
°
C
10
2.0
T
J
= 150
°
C
1
1.5
1.0
0.5
0.1
5
7
9
V DS = 50V
20µs PULSE WIDTH
11
13
0.0
-60 -40 -20
V
GS
= 12V
0
20
40
60
80 100 120 140 160
V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
4
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Pre-Irradiation
IRHQ7214
600
500
V
GS
, Gate-to-Source Voltage (V)
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd ,
C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
20
I
D
= 1.6A
16
V
DS
= 200V
V
DS
= 125V
V
DS
= 50V
C, Capacitance (pF)
400
12
300
8
200
100
4
0
1
10
100
0
0
4
8
FOR TEST CIRCUIT
SEE FIGURE 13
12
16
20
V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
100
I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10
I
D
, Drain Current (A)
10
10us
T
J
= 150
°
C
100us
1
1
T
J
= 25
°
C
V
GS
= 0 V
0.6
0.8
1.0
1.2
1.4
1ms
0.1
0.4
0.1
T
C
= 25 ° C
T
J
= 150 ° C
Single Pulse
10
100
10ms
1000
V
SD
,Source-to-Drain Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
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