PD - 90697E
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (T0-204AA/AE)
Product Summary
Part Number
IRH7250
IRH3250
IRH4250
IRH8250
Radiation Level
100K Rads (Si)
300K Rads (Si)
600K Rads (Si)
1000K Rads (Si)
R
DS(on)
0.11Ω
0.11Ω
0.11Ω
0.11Ω
I
D
26A
26A
26A
26A
IRH7250
200V, N-CHANNEL
RAD Hard HEXFET
TECHNOLOGY
™
®
TO-204AE
International Rectifier’s RADHard
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for both Total Dose and Single Event Effects (SEE).
The combination of low Rdson and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
HEXFET
®
technol-
Features:
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Low R
DS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Package
Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C Continuous Drain Current
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM
Pulsed Drain Current
➀
PD @ T C = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
➁
Avalanche Current
➀
Repetitive Avalanche Energy
➀
Peak Diode Recovery dv/dt
➂
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
For footnotes refer to the last page
26
16
104
150
1.2
±20
500
26
15
5.0
-55 to 150
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
o
C
g
300 ( 0.063 in.(1.6mm) from case for 10s)
11.5 (Typical )
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1
12/04/02
IRH7250
Pre-Irradiation
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
∆BV
DSS /∆T J Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
g fs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min
200
—
—
—
2.0
8.0
—
—
—
—
—
—
—
—
—
—
—
—
Typ Max Units
—
0.27
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
10
—
—
0.10
0.11
4.0
—
25
250
100
-100
170
30
70
33
140
140
140
—
V
V/°C
Ω
V
S( )
µA
Ω
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
VGS = 12V, ID =16A
➃
VGS = 12V, ID = 26A
VDS = VGS, ID = 1.0mA
VDS > 15V, IDS = 16A
➃
VDS= 160V ,VGS=0V
VDS = 160V,
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =12V, ID =26A
VDS = 100V
VDD = 100V, ID =26A
VGS =12V, RG = 2.35Ω
IGSS
IGSS
Qg
Q gs
Q gd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
nA
nC
ns
nH
Measured from Drain lead (6mm /0.25in.
from package) to Source lead (6mm /0.25in.
from package) with Source wires internally
bonded from Source Pin to Drain Pad
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
4700
850
210
—
—
—
pF
VGS = 0V, VDS = 25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
IS
ISM
VSD
trr
Q RR
ton
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
➀
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min Typ Max Units
—
—
—
—
—
—
—
—
—
—
26
104
1.4
820
12
Test Conditions
A
V
nS
µC
T
j
= 25°C, IS = 26A, VGS = 0V
➃
Tj = 25°C, IF = 26A, di/dt
≤
100A/µs
VDD
≤
50V
➃
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthJA
RthCS
Junction-to-Case
Junction-to-Ambient
Case-to-Sink
Min Typ Max Units
—
—
—
— 0.83
—
30
0.12 —
°C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
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Radiation Characteristics
Pre-Irradiation
IRH7250
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
➄➅
Parameter
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)
R
DS(on)
V
SD
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
➃
On-State Resistance (TO-3)
Static Drain-to-Source
➃
On-State Resistance (TO-204AE)
Diode Forward Voltage
➃
100 K Rads(Si)
1
300 - 1000K Rads (Si)
2
Units
V
nA
µA
Ω
Ω
V
Test Conditions
V
GS
= 0V, I
D
= 1.0mA
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= 20V
V
GS
= -20 V
V
DS
=160V, V
GS
=0V
V
GS
= 12V, I
D
=16A
V
GS
= 12V, I
D
=16A
V
GS
= 0V, IS = 26A
Min
200
2.0
—
—
—
—
—
—
Max
—
4.0
100
-100
25
0.100
0.100
1.4
Min
200
1.25
—
—
—
—
—
—
Max
—
4.5
100
-100
50
0.155
0.155
1.4
1. Part numbers IRH7250
2. Part number IRH3250, IRH4250and IRH8250
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion
Cu
Br
LET
Energy
Range
MeV/(mg/cm
2
))
(MeV)
(µm)
28
285
43
36.8
305
39
V
DS(V)
@
V
GS
=0V @
V
GS
=-5V @
V
GS
=-10V@
V
GS
=-15V @
V
GS
=-20V
190
100
180
100
170
100
125
50
—
—
200
150
VDS
100
50
0
0
-5
-10
VGS
-15
-20
Cu
Br
Fig a.
Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRH7250
Post-Irradiation
Pre-Irradiation
Fig 1.
Typical Response of Gate Threshhold
Fig 2.
Typical Response of On-State Resistance
Voltage Vs. Total Dose Exposure
Vs. Total Dose Exposure
Fig 3.
Typical Response of Transconductance
Vs. Total Dose Exposure
Fig 4.
Typical Response of Drain to Source
Breakdown Vs. Total Dose Exposure
4
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Post-Irradiation
Pre-Irradiation
IRH7250
Fig 5.
Typical Zero Gate Voltage Drain
Current Vs. Total Dose Exposure
Fig 6.
Typical On-State Resistance Vs.
Neutron Fluence Level
Fig 8a.
Gate Stress of
V
GSS
Equals 12 Volts During
Radiation
Fig 7.
Typical Transient Response
of Rad Hard HEXFET During 1x10
12
Rad (Si)/Sec Exposure
Fig 8b.
V
DSS
Stress Equals
80% of B
VDSS
During Radiation
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